公开(公告)号：US20160017495A1

公开(公告)日：2016-01-21

申请号：US14799799

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Kelvin CHAN ,  Martin Jay SEAMONS ,  Shaunak MUKHERJEE ,  Abhijit Basu MALLICK ,  Jianhua ZHOU ,  Kang Sub YIM

IPC: C23C16/505

CPC classification number: C23C16/505 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/455 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274

Abstract: Embodiments disclosed herein generally include methods for forming porous low k dielectric films. In one embodiment, a method of forming a porous low k dielectric film on a substrate using PECVD and in situ radical curing in a processing chamber is disclosed. The method includes introducing radicals into a processing region of the processing chamber, introducing a gas mixture into the processing region of the processing chamber, forming a plasma in the processing region and depositing the porous low k dielectric film on the substrate.

Abstract translation: 本文公开的实施方案通常包括形成多孔低k电介质膜的方法。 在一个实施例中，公开了一种使用PECVD在基板上形成多孔低k电介质膜并在处理室中进行原位自由基固化的方法。 该方法包括将自由基引入处理室的处理区域，将气体混合物引入处理室的处理区域，在处理区域中形成等离子体，并在基板上沉积多孔低k电介质膜。

公开(公告)号：US20160111373A1

公开(公告)日：2016-04-21

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Kang Sub YIM ,  Cheng PAN ,  Sure NGO ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：US20150380265A1

公开(公告)日：2015-12-31

申请号：US14765673

申请日：2014-02-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Kang Sub YIM ,  Pendar ARDALAN ,  Sure NGO ,  Alexandros T. DEMOS

IPC: H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/31058 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02359 ,  H01L21/3105

Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.

Abstract translation: 本文公开了一种用于沉积具有一个或多个特征的低K电介质膜的方法和装置。 形成电介质层的方法可以包括将衬底定位在处理室中，将沉积气体输送到处理室中，使用沉积气体在衬底的表面上沉积致密的有机硅层，致密有机硅层包含致孔碳 将图案转移到致密的有机硅层中，从反应气体形成成孔等离子体，将致密的有机硅层暴露于成孔等离子体以产生多孔有机硅层，其中成孔等离子体去除至少一部分 的造孔碳，并将多孔有机硅层暴露于干燥后处理。

公开(公告)号：US20140349480A1

公开(公告)日：2014-11-27

申请号：US14285535

申请日：2014-05-22

Applicant: Applied Materials, Inc.

Inventor： Mei-yee SHEK ,  Weifeng YE ,  Li-Qun XIA ,  Kang Sub YIM ,  Kelvin CHAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US20140017895A1

公开(公告)日：2014-01-16

申请号：US13920380

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Kelvin CHAN ,  Jin XU ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

公开(公告)号：US20170125241A1

公开(公告)日：2017-05-04

申请号：US15074038

申请日：2016-03-18

Applicant: Applied Materials, Inc.

Inventor： Shaunak MUKHERJEE ,  Kang Sub YIM ,  Deenesh PADHI ,  Kevin M. CHO ,  Khoi Anh PHAN ,  Chien-An CHEN ,  Priyanka DASH

IPC: H01L21/02 ,  H01L21/32

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/32

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.

公开(公告)号：US20160017492A1

公开(公告)日：2016-01-21

申请号：US14801348

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Alexandros T. DEMOS ,  Vu Ngoc Tran NGUYEN ,  Kelvin CHAN ,  He REN ,  Kang Sub YIM ,  Mehul B. NAIK

IPC: C23C16/48 ,  C23C16/40 ,  C23C16/505 ,  B01J19/12

CPC classification number: C23C16/482 ,  C23C16/401 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76829

Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.

Abstract translation: 本文所述的实施例提供了一种用于密封多孔低k电介质膜的方法。 该方法包括使用循环过程在多孔低k电介质膜上形成密封层。 循环过程包括重复在多孔低k电介质膜上沉积密封层的顺序并处理密封层，直到密封层达到预定厚度。 每个中间密封层的处理在每个中间密封层的表面上产生更多的反应性位点，这提高了所得密封层的质量。

公开(公告)号：US20150284849A1

公开(公告)日：2015-10-08

申请号：US14657627

申请日：2015-03-13

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/50 ,  C23C16/26

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68792

Abstract: Methods for making a low k porous dielectric film with improved mechanical strength are disclosed herein. A method of forming a dielectric layer can include delivering a deposition gas to a substrate in a processing chamber, the deposition gas comprising an acrylate precursor with a UV active side group and an oxygen containing precursor; activating the deposition gas to deposit an uncured carbon-containing layer on a surface of the substrate; and delivering UV radiation to the uncured carbon-containing layer to create a cured carbon-containing layer, the UV active side group crosslinking with a second group.

Abstract translation: 本文公开了制造具有改善的机械强度的低k多孔介电膜的方法。 形成电介质层的方法可以包括将沉积气体输送到处理室中的衬底，沉积气体包含具有UV活性侧基团和含氧前体的丙烯酸酯前体; 激活沉积气体以在基板的表面上沉积未固化的含碳层; 并向未固化的含碳层递送UV辐射以产生固化的含碳层，所述UV活性侧基与第二基团交联。

公开(公告)号：US20150232992A1

公开(公告)日：2015-08-20

申请号：US14623357

申请日：2015-02-16

Applicant: Applied Materials, Inc.

Inventor： Taewan KIM ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: C23C16/48 ,  C23C16/46 ,  C23C16/30 ,  C23C16/50

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

Abstract: Embodiments of the present invention generally provide a method and apparatus for forming a low-k dielectric porous silicon oxycarbon layer within an integrated circuit. In one embodiment, a method is provided for depositing a porogen and bulk layer containing silicon oxycarbon layer, selectively removing the porogens from the formed layer without simultaneously cross-linking the bulk layer, and then cross-linking the bulk layer material. In other embodiments, methods are provided for depositing multiple silicon oxycarbon sublayers, selectively removing porogens from each sub-layer without simultaneously cross-linking the bulk material of the sub-layer, and separately cross-linking the sub-layers.

Abstract translation: 本发明的实施方案通常提供了用于在集成电路内形成低k电介质多孔硅氧化碳层的方法和装置。 在一个实施方案中，提供了一种用于沉积含有硅氧化碳层的致孔剂和本体层的方法，选择性地从成形层除去致孔剂，而不同时交联本体层，然后交联本体层材料。 在其它实施方案中，提供了用于沉积多个硅氧化碳亚层的方法，从每个子层选择性地除去致孔剂，而不同时交联子层的主体材料，以及分别交联子层。

公开(公告)号：US20140264780A1

公开(公告)日：2014-09-18

申请号：US14213038

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Pendar ARDALAN ,  Sure NGO ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L29/06 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Abstract translation: 本发明的实施例提供了一种薄膜堆叠和用于沉积低介电常数体积层的粘合剂层的方法，而不需要起始层。 用于半导体器件的薄膜叠层包括直接沉积在下层上的双层低K电介质。 双低K电介质由不含无碳的起始层沉积的粘合剂层组成。