公开(公告)号：US20070034877A1

公开(公告)日：2007-02-15

申请号：US11529392

申请日：2006-09-29

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L29/76 ,  H01L21/84

CPC分类号： H01L21/02683 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0738 ,  B23K26/0853 ,  B23K26/10 ,  B23K26/702 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/78603

摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.

摘要翻译： 在基板上形成具有凹凸的绝缘膜。 在绝缘膜上形成半导体膜。 因此，对于通过使用激光的结晶，在半导体膜中选择性地形成应力集中的部分。 更具体地，在半导体膜中设置条纹或矩形的凹凸。 然后，连续波激光沿着形成在半导体膜中的条形凹部和突起或矩形的长轴或短轴的方向照射。

公开(公告)号：US07115903B2

公开(公告)日：2006-10-03

申请号：US10330024

申请日：2002-12-27

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L31/36 ,  H01L21/84

CPC分类号： H01L21/02683 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0738 ,  B23K26/0853 ,  B23K26/10 ,  B23K26/702 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/78603

摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.

公开(公告)号：US20050161742A1

公开(公告)日：2005-07-28

申请号：US11087652

申请日：2005-03-24

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

公开(公告)号：US20050098784A1

公开(公告)日：2005-05-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00 ,  H01L29/76

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US20070015323A1

公开(公告)日：2007-01-18

申请号：US11513054

申请日：2006-08-31

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成具有条状或矩形形状的凹凸和凹凸。 然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

公开(公告)号：US07749818B2

公开(公告)日：2010-07-06

申请号：US10352233

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/148 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/785 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成条纹形状或矩形形状不均匀或开口。 然后将连续波激光照射到形成在绝缘膜上的半导体膜。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波振荡激光。

公开(公告)号：US07737506B2

公开(公告)日：2010-06-15

申请号：US11513054

申请日：2006-08-31

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L29/76 ,  H01L29/778 ,  H01L27/01

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成具有条状或矩形形状的凹凸和凹凸。 然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

公开(公告)号：US07105392B2

公开(公告)日：2006-09-12

申请号：US10352240

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/50

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.

公开(公告)号：US07148092B2

公开(公告)日：2006-12-12

申请号：US10352066

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

公开(公告)号：US20070085080A1

公开(公告)日：2007-04-19

申请号：US11636598

申请日：2006-12-11

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

IPC分类号： H01L29/00

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

摘要翻译： 为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中 具有高电流驱动性能，并且元件之间波动较小。 本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。