公开(公告)号：US11856831B2

公开(公告)日：2023-12-26

申请号：US17214176

申请日：2021-03-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Kai Sui ,  Xiaolei Zhang ,  Zhongyuan Sun ,  Yuan Jia ,  Dapeng Xue ,  Lubin Shi

IPC: H10K59/38 ,  H10K50/115 ,  H10K50/86 ,  H10K71/00

CPC classification number: H10K59/38 ,  H10K50/115 ,  H10K50/865 ,  H10K71/00

Abstract: The present disclosure provides a color filter substrate and a method for manufacturing the same, and a display device, and the color filter substrate includes a base substrate, a black matrix and a color filter layer located on the base substrate, a quantum dot layer located on a side of the color filter layer away from the base substrate, a barrier layer located on a side of the black matrix away from the base substrate, and a first inorganic layer, and the first inorganic layer at least includes: a first portion located between the color filter layer and the quantum dot layer; a second portion located on the base substrate and between the quantum dot layer and the barrier layer; and a third portion located on a side of the barrier layer away from the base substrate.

公开(公告)号：US11695079B2

公开(公告)日：2023-07-04

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US11502752B2

公开(公告)日：2022-11-15

申请号：US16769687

申请日：2019-12-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue

IPC: H04B10/11 ,  H01L27/144 ,  H01L31/12 ,  H01L33/60

Abstract: The present disclosure related to a visible light communication apparatus, comprising a substrate; a TFT structure layer on the substrate; a photoelectric conversion component on a source or a drain of the TFT structure layer; and a light-emitting component on the substrate. The photoelectric conversion component may be configured to receive an optical signal and convert the optical signal into an electrical signal; and the light-emitting component may be configured to emit an optical signal.

公开(公告)号：US11328530B2

公开(公告)日：2022-05-10

申请号：US16495547

申请日：2019-04-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue

IPC: H01L27/146 ,  G06V40/13

Abstract: A fingerprint recognition device includes a first substrate and at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector including a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer. A side of the photosensitive layer facing away from the first electrode has a curved shape.

公开(公告)号：US11302722B2

公开(公告)日：2022-04-12

申请号：US16314298

申请日：2018-03-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu Li ,  Zhanfeng Cao ,  Qi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/12 ,  H01L27/32

Abstract: An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.

公开(公告)号：US20240212564A1

公开(公告)日：2024-06-27

申请号：US17913258

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Binbin Tong ,  Chengfu Xu ,  Dapeng Xue ,  Shuilang Dong ,  Nianqi Yao

IPC: G09G3/20

CPC classification number: G09G3/2092 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/062 ,  G09G2310/08

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

公开(公告)号：US20210226701A1

公开(公告)日：2021-07-22

申请号：US16769687

申请日：2019-12-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue

IPC: H04B10/11 ,  H01L31/12 ,  H01L27/144 ,  H01L33/60

Abstract: The present disclosure related to a visible light communication apparatus, comprising a substrate; a TFT structure layer on the substrate; a photoelectric conversion component on a source or a drain of the TFT structure layer; and a light-emitting component on the substrate. The photoelectric conversion component may be configured to receive an optical signal and convert the optical signal into an electrical signal; and the light-emitting component may be configured to emit an optical signal.

公开(公告)号：US10916565B2

公开(公告)日：2021-02-09

申请号：US16330922

申请日：2018-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu Li ,  Zhanfeng Cao ,  Qi Yao ,  Dapeng Xue ,  Da Lu

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

公开(公告)号：US10741692B2

公开(公告)日：2020-08-11

申请号：US16036099

申请日：2018-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shengguang Ban ,  Zhanfeng Cao ,  Qi Yao ,  Dapeng Xue

IPC: H01L29/78 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/027 ,  H01L21/3205 ,  G02F1/1362 ,  G02F1/1368

Abstract: The present disclosure provides a method for manufacturing an LTPS thin film transistor which includes: forming a light shielding pattern and an active layer of the LTPS thin film transistor on a base substrate through one single patterning process, in which an orthogonal projection of the active layer on the base substrate falls within an orthogonal projection of the light shielding pattern on the base substrate, and the light shielding pattern is made of a semiconductor material.

公开(公告)号：US10566350B2

公开(公告)日：2020-02-18

申请号：US16032568

申请日：2018-07-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shengguang Ban ,  Zhanfeng Cao ,  Qi Yao ,  Dapeng Xue

IPC: H01L27/12 ,  H01L31/0216 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417

Abstract: A display substrate, a method of manufacturing the same and a display device are provided. The display substrate includes a base substrate, a plurality of metal particles dispersedly disposed on the base substrate and forming a discontinuous film, a light shielding layer disposed on a side of the base substrate on which the plurality of metal particles are disposed and covering the plurality of metal particles, and a thin film transistor located on a side of the light shielding layer far away from the base substrate.