Abstract:
A method for manufacturing a light field display device and a light field display device are provided, the method includes: forming a plano-concave lens layer on a substrate, and the plano-concave lens layer comprises a plurality of plano-concave lenses arranged in an array and a plurality of alignment marks arranged at preset positions; forming a first planarization layer covering the plano-concave lens layer to form a microlens array, the first planarization layer having a refractive index greater than a refractive index of the plano-concave lens layer; attaching the light-emitting side of the display panel to a side of the microlens array away from the substrate according to the alignment mark.
Abstract:
Embodiments of the present application disclose a method for manufacturing a naked-eye 3D device and a naked-eye 3D device. The method includes: forming a display module including a plurality of pixel islands; forming a spacer layer on the display module; and forming a micro-lens array on the spacer layer, wherein the spacer layer is formed to have a thickness such that the plurality of pixel islands are located at a focal plane of the micro-lens array. The method further includes: forming an alignment mark between the spacer layer and the display module, wherein the alignment mark is used for, when forming the micro-lens array, aligning each micro-lens in the micro-lens array with one of the plurality of pixel islands.
Abstract:
The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.
Abstract:
Fabrication methods of a transparent conductive electrode (301) and an array substrate are provided. The fabrication method of the transparent conductive electrode (301) comprises: forming a sacrificial layer pattern (201) on a substrate (10) having a first region (A1) and a second region (A2) adjacent to each other, wherein the sacrificial layer pattern (201) is located in the second region (A2), and has an upper sharp corner profile formed on a side adjacent to the first region (A1); forming a transparent conductive thin-film (30) in the first region (A1) and the second region (A2) of the substrate (10) with the sacrificial layer pattern (201) formed thereon, wherein a thickness ratio of the transparent conductive thin-film (30) to the sacrificial layer pattern (201) is less than or equal to 1:1.5, and the transparent conductive thin-film (30) is disconnected at the upper sharp corner profile of the sacrificial layer pattern (201), such that at least a part of a side surface of the sacrificial layer pattern (201) facing the first region (A1) is exposed; and removing the sacrificial layer pattern (201) so as to reserve the transparent conductive thin-film (30) in the first region as the transparent conductive electrode (301).
Abstract:
Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.
Abstract:
The present disclosure belongs to the field of display technology, and provides an optical module, a manufacturing method thereof, and a display device. The optical module includes: a substrate; a barrier structure arranged on the substrate; a black matrix arranged within the barrier structure, an orthogonal projection of the black matrix onto the substrate not going beyond a region surrounded by the barrier structure; and optical lenses arranged on a side of the black matrix away from the substrate. An orthogonal projection of a gap between adjacent optical lenses onto the substrate falls into the black matrix.
Abstract:
A substrate includes a base substrate, at least two bonding pads are arranged on the base substrate, the base substrate and an electronic element are bonded to each other through the at least two bonding pads, at least two pins are arranged on the electronic element, a protective layer is arranged at a side of the bonding pads away from the base substrate, and an opening region is arranged in the protective layer at each bonding pad, to expose partial surface of the bonding pad. A bonding combination layer made of a low-melting-point alloy material is arranged in the opening region, and the low-melting-point alloy material is capable of being melted at a first predetermined temperature, to enable the bonding pads and the pins to be bonded to each other.
Abstract:
A display component includes a transflective layer, a reflective layer, and at least one sidewall. The reflective layer is arranged opposing to the transflective layer, and the at least one sidewall is arranged between the reflective layer and the transflective layer. The transflective layer, the reflective layer, and the at least one sidewall are together configured, upon an input of an incident light through the transflective layer, to output a light of a target color out through the transflective layer. One or more of the at least one sidewall comprise at least one light-conversion layer configured to emit a light of the target color upon excitement by a light of a different color shedding thereupon. The display component can be configured to output a red light, a green light, or a blue light.
Abstract:
A backlight includes a plurality of light sources of at least three different colors disposed on a base substrate, and a plurality of grating units that are disposed on a light exit side of the plurality of light sources and are in one-to-one correspondence with the plurality of light sources. Each of the plurality of grating units is used for splitting light emitted by a corresponding one of the plurality of light sources to form in an array of uniformly distributed monochromatic spots, so that the backlight may form an array of colored spots in which at least three different colors of light spots are alternately arranged in sequence along a first direction, wherein the first direction is a row direction or a column direction of the array of colored spots.
Abstract:
Disclosed are an electronic device and the manufacturing method thereof, a manufacturing method of a thin film transistor, and an array substrate and manufacturing method thereof. The manufacturing method of an electronic device includes: forming a metallic structure on a base substrate; forming an oxygen-free insulating layer on the metallic structure and the base substrate; and forming an insulating protective layer on the oxygen-free insulating layer. The manufacturing method of the electronic device protects a metallic structure by forming an oxygen-free insulating layer, not containing oxygen elements, on the metallic structure, and hence prevents the metallic structure from being oxidized.