Liquid crystal display and display device

    公开(公告)号:US09658497B2

    公开(公告)日:2017-05-23

    申请号:US14422766

    申请日:2014-06-03

    Abstract: The present invention discloses a liquid crystal display panel and a display device. A capacitance compensation portion is arranged using a shading region, and the capacitance compensation portion is arranged opposite to a portion of a common electrode located within the shading region. Compared to the case where a common electrodes and a pixel electrode are overlapped only in a light transmitting region, the present invention enlarges the overlap area of the pixel electrode and the common electrode in the shading region, compensates the storage capacitance between the pixel electrode and the common electrode, and reduces the voltage difference before and after jump of the voltage of the pixel electrode, and improves the flicker of a liquid crystal display panel. Moreover, as the capacitance compensation portions additionally provided in the pixel electrodes are located within the shading region, the aperture rate of pixel regions will not be influenced.

    Liquid crystal display device
    13.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号:US09417489B2

    公开(公告)日:2016-08-16

    申请号:US13954038

    申请日:2013-07-30

    CPC classification number: G02F1/134336 G02F1/134363 G02F1/13624

    Abstract: Embodiments of the present invention disclose a liquid crystal display device, comprising: a first substrate, including a base substrate, and gate lines and data lines, formed on the base substrate and crossing each other to define a plurality of pixel structures; a second substrate, cell-assembled with the first substrate to form a liquid crystal cell; and a liquid crystal layer, filled between the first substrate and the second substrate, wherein each of the plurality of pixel structures comprises: the base substrate; a common electrode, formed on the base substrate; a first insulating layer, formed on the common electrode; a plurality of strip-shaped pixel electrodes, formed on the first insulating layer, wherein the plurality of strip-shaped pixel electrodes include a plurality of positive electrodes and negative electrodes which are disposed alternately.

    Abstract translation: 本发明的实施例公开了一种液晶显示装置,包括:形成在基底基板上并彼此交叉以限定多个像素结构的包括基底基板的第一基板和栅极线和数据线; 第二基板,与第一基板电池组装以形成液晶单元; 以及填充在所述第一基板和所述第二基板之间的液晶层,其中所述多个像素结构中的每一个包括:所述基底; 形成在基底基板上的公共电极; 形成在公共电极上的第一绝缘层; 形成在所述第一绝缘层上的多个带状像素电极,其中所述多个条形像素电极包括交替设置的多个正电极和负电极。

    Fabricating Method Of Thin Film Transistor, Fabricating Method Of Array Substrate And Display Device
    14.
    发明申请
    Fabricating Method Of Thin Film Transistor, Fabricating Method Of Array Substrate And Display Device 有权
    薄膜晶体管的制造方法,阵列基板和显示装置的制造方法

    公开(公告)号:US20140080254A1

    公开(公告)日:2014-03-20

    申请号:US14028667

    申请日:2013-09-17

    CPC classification number: H01L29/66969 H01L27/1225 H01L29/7869

    Abstract: An embodiment of the present invention provides a fabricating method of a thin film transistor, a fabricating method of an array substrate, and a display device. The fabricating method of a thin film transistor comprises: forming a gate electrode on a substrate; and forming a gate insulating layer, a semiconductor layer, source and drain electrodes and a channel region on the substrate, wherein, the semiconductor layer is formed of a metal oxide, and two etching steps are used to form the channel region, and in a first etching step, a part of a source-drain metal layer above the semiconductor layer corresponding to the channel region is removed by using a dry etching, and in a second etching step, a remaining part of the source-drain metal layer above the semiconductor layer corresponding to the channel region is removed by using a wet etching, thereby forming the channel region.

    Abstract translation: 本发明的实施例提供了薄膜晶体管的制造方法,阵列基板的制造方法和显示装置。 薄膜晶体管的制造方法包括:在衬底上形成栅电极; 以及在基板上形成栅极绝缘层,半导体层,源极和漏极以及沟道区,其中半导体层由金属氧化物形成,并且使用两个蚀刻步骤来形成沟道区,并且在 第一蚀刻步骤,通过使用干蚀刻去除对应于沟道区的半导体层上方的源极 - 漏极金属层的一部分,并且在第二蚀刻步骤中,在半导体上方的源极 - 漏极金属层的剩余部分 通过使用湿法蚀刻除去与沟道区对应的层,从而形成沟道区。

    Display device and driving method thereof

    公开(公告)号:US10269319B2

    公开(公告)日:2019-04-23

    申请号:US15571623

    申请日:2017-06-22

    Abstract: A display device and a driving method thereof are provided. The driving method includes supplying a first voltage Vp1 to a sub-pixel of the display device through data lines in a first stage of a control period for displaying an image. A time for displaying the image includes a plurality of control periods, and the control period includes the first stage and at least a second stage following the first stage. The driving method also includes supplying a second voltage Vp2 to the sub-pixel through the data lines in the second stage. A gate scanning frequency of the first stage is F1 and a gate scanning frequency of the second stage is F2. When the first stage ends, the sub-pixel has a pixel voltage Vp3, F1 |Vp3|.

    Display panel and display apparatus

    公开(公告)号:US10209593B2

    公开(公告)日:2019-02-19

    申请号:US15511234

    申请日:2016-07-01

    Inventor: Yoonsung Um

    Abstract: The present disclosure provides a display panel and a display apparatus. The display panel includes a plurality of array units each including a first pixel array and a second pixel array, each of the first pixel array and the second pixel array has at least one domain tilting direction, and, one row of charging gate line and one row of common gate line are disposed between the first pixel arrays and the second pixel arrays of each row of the array units. A first transistor, a second transistor, a third transistor and an auxiliary liquid crystal capacitor are further disposed between the first pixel array and the second pixel array of each of the array units.

    THIN FILM TRANSISTOR AND CIRCUIT STRUCTURE
    20.
    发明申请
    THIN FILM TRANSISTOR AND CIRCUIT STRUCTURE 有权
    薄膜晶体管和电路结构

    公开(公告)号:US20160372487A1

    公开(公告)日:2016-12-22

    申请号:US14900960

    申请日:2015-06-19

    Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.

    Abstract translation: 本公开提供了TFT和电路结构,以改善TFT的阈值电压漂移的特性。 TFT包括栅电极,半导体层,蚀刻停止层,以及连接到半导体层的源电极和漏电极。 TFT还包括布置在蚀刻停止层上方的停止结构。 停止结构与源电极和漏电极电隔离,并且止动结构在蚀刻停止层上的正交投影至少部分地与半导体层的正交投影重叠在蚀刻停止层上。 本公开改善了TFT的阈值电压漂移的特性。

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