P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
    11.
    发明申请
    P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates 失效
    P型半导体氧化锌膜的制造方法以及使用透明基板的脉冲激光沉积法

    公开(公告)号:US20070243328A1

    公开(公告)日:2007-10-18

    申请号:US11405020

    申请日:2006-04-17

    IPC分类号: C23C16/00 C23C14/30

    摘要: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.

    摘要翻译: 公开了一种p型半导体氧化锌(ZnO)膜及其制备方法。 该膜与磷(P)和锂(Li)共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程,其包括脉冲激光源,在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射,穿过衬底,然后聚焦在靶上。 通过将基板朝向目标平移,这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征,其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸,其尺寸可以与激光焦点类似,并且提供用于直接沉积图案化材料的新颖方法。

    Method of producing compound nanorods and thin films
    12.
    发明授权
    Method of producing compound nanorods and thin films 有权
    复合纳米棒和薄膜的制备方法

    公开(公告)号:US07767272B2

    公开(公告)日:2010-08-03

    申请号:US11754031

    申请日:2007-05-25

    IPC分类号: B05D3/00 C08J7/18 G21H5/00

    摘要: A method of producing compound nanorods and thin films under a controlled growth mode is described. The method involves ablating compound targets using an ultrafast pulsed laser and depositing the ablated materials onto a substrate. When producing compound nanorods, external catalysts such as pre-deposited metal nanoparticles are not involved. Instead, at the beginning of deposition, simply by varying the fluence at the focal spot on the target, a self-formed seed layer can be introduced for nanorods growth. This provides a simple method of producing high purity nanorods and controlling the growth mode. Three growth modes are covered by the present invention, including nanorod growth, thin film growth, and nano-porous film growth.

    摘要翻译: 描述了在受控生长模式下制备复合纳米棒和薄膜的方法。 该方法包括使用超快速脉冲激光烧蚀化合物靶,并将消融材料沉积在基底上。 当制备复合纳米棒时,不涉及外部催化剂如预沉积的金属纳米颗粒。 相反,在沉积开始时,简单地通过改变目标上焦点处的注量,可以引入自形晶种层用于纳米棒生长。 这提供了生产高纯度纳米棒并控制生长模式的简单方法。 本发明涵盖三种生长方式,包括纳米棒生长,薄膜生长和纳米多孔膜生长。

    Method for producing and depositing nanoparticles
    13.
    发明申请
    Method for producing and depositing nanoparticles 审中-公开
    生产和沉积纳米颗粒的方法

    公开(公告)号:US20080006524A1

    公开(公告)日:2008-01-10

    申请号:US11712924

    申请日:2007-03-02

    IPC分类号: C23C14/00

    摘要: The present invention provides a one-step process for producing and depositing size-selected nanoparticles onto a substrate surface using ultrafast pulsed laser ablation of solid target materials. The system includes a pulsed laser with a pulse duration ranging from a few femtoseconds to a few tens of picoseconds, an optical setup for processing the laser beam such that the beam is focused onto the target surface with an appropriate average energy density and an appropriate energy density distribution, and a vacuum chamber in which the target and the substrate are installed and the background gases and their pressures are appropriately adjusted.

    摘要翻译: 本发明提供一种用于使用固体靶材料的超快脉冲激光烧蚀来将大小选定的纳米颗粒生产并沉积到衬底表面上的一步法。 该系统包括脉冲激光,其脉冲持续时间范围从几飞秒到几十皮秒,用于处理激光束的光学设置,使得光束以适当的平均能量密度和适当的能量聚焦到目标表面上 密度分布,以及真空室,其中安装了靶和基底,并适当地调节背景气体及其压力。

    METHOD FOR DEPOSITING CRYSTALLINE TITANIA NANOPARTICLES AND FILMS
    14.
    发明申请
    METHOD FOR DEPOSITING CRYSTALLINE TITANIA NANOPARTICLES AND FILMS 有权
    沉积钛铁氧体纳米颗粒和膜的方法

    公开(公告)号:US20090311513A1

    公开(公告)日:2009-12-17

    申请号:US12497205

    申请日:2009-07-02

    IPC分类号: B32B5/16 C23C14/28

    摘要: A one-step and room-temperature process for depositing nanoparticles or nanocomposite (nanoparticle-assembled) films of metal oxides such as crystalline titanium dioxide (TiO2) onto a substrate surface using ultrafast pulsed laser ablation of Titania or metal titanium target. The system includes a pulsed laser with a pulse duration ranging from a few femtoseconds to a few tens of picoseconds, an optical setup for processing the laser beam such that the beam is focused onto the target surface with an appropriate average energy density and an appropriate energy density distribution, and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.

    摘要翻译: 使用二氧化钛或金属钛靶的超快速脉冲激光烧蚀将金属氧化物如结晶二氧化钛(TiO 2)的纳米颗粒或纳米复合材料(纳米颗粒组装的)膜沉积到基底表面上的一步和室温方法。 该系统包括脉冲激光,其脉冲持续时间范围从几飞秒到几十皮秒,用于处理激光束的光学设置,使得光束以适当的平均能量密度和适当的能量聚焦到目标表面上 密度分布,以及真空室,其中安装了目标物和基质,背景气体及其压力被适当调节。

    Method for depositing crystalline titania nanoparticles and films
    15.
    发明申请
    Method for depositing crystalline titania nanoparticles and films 审中-公开
    沉积结晶二氧化钛纳米粒子和薄膜的方法

    公开(公告)号:US20080187684A1

    公开(公告)日:2008-08-07

    申请号:US11798114

    申请日:2007-05-10

    IPC分类号: C23C14/26

    摘要: The present invention provides a one-step and room-temperature process for depositing nanoparticles or nanocomposite (nanoparticle-assembled) films of crystalline titanium dioxide (TiO2) onto a substrate surface using ultrafast pulsed laser ablation of Titania or metal titanium target. The system includes a pulsed laser with a pulse duration ranging from a few femtoseconds to a few tens of picoseconds, an optical setup for processing the laser beam such that the beam is focused onto the target surface with an appropriate average energy density and an appropriate energy density distribution, and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.

    摘要翻译: 本发明提供一步和室温方法,用于使用Titania的超快速脉冲激光烧蚀将结晶二氧化钛(TiO 2)的纳米颗粒或纳米复合材料(纳米颗粒组装的)膜沉积到基底表面上 或金属钛靶。 该系统包括脉冲激光,其脉冲持续时间范围从几飞秒到几十皮秒,用于处理激光束的光学设置,使得光束以适当的平均能量密度和适当的能量聚焦到目标表面上 密度分布,以及真空室,其中安装了目标物和基质,背景气体及其压力被适当调节。

    P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates
    16.
    发明申请
    P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates 审中-公开
    P型半导体氧化锌薄膜及其制备方法及使用透明基板的脉冲激光沉积方法

    公开(公告)号:US20100000466A1

    公开(公告)日:2010-01-07

    申请号:US12558038

    申请日:2009-09-11

    IPC分类号: H01L21/465

    摘要: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.

    摘要翻译: 公开了一种p型半导体氧化锌(ZnO)膜及其制备方法。 该膜与磷(P)和锂(Li)共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程,其包括脉冲激光源,在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射,穿过衬底,然后聚焦在靶上。 通过将基板朝向目标平移,这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征,其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸,其尺寸可以与激光焦点类似,并且提供用于直接沉积图案化材料的新颖方法。

    METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS
    17.
    发明申请
    METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS 有权
    生产化合物和薄膜的方法

    公开(公告)号:US20080292808A1

    公开(公告)日:2008-11-27

    申请号:US11754031

    申请日:2007-05-25

    IPC分类号: B05D3/12

    摘要: A method of producing compound nanorods and thin films under a controlled growth mode is described. The method involves ablating compound targets using an ultrafast pulsed laser and depositing the ablated materials onto a substrate. When producing compound nanorods, external catalysts such as pre-deposited metal nanoparticles are not involved. Instead, at the beginning of deposition, simply by varying the fluence at the focal spot on the target, a self-formed seed layer can be introduced for nanorods growth. This provides a simple method of producing high purity nanorods and controlling the growth mode. Three growth modes are covered by the present invention, including nanorod growth, thin film growth, and nano-porous film growth.

    摘要翻译: 描述了在受控生长模式下制备复合纳米棒和薄膜的方法。 该方法包括使用超快速脉冲激光烧蚀化合物靶,并将消融材料沉积在基底上。 当制备复合纳米棒时,不涉及外部催化剂如预沉积的金属纳米颗粒。 相反,在沉积开始时,简单地通过改变目标上焦点处的注量,可以引入自形晶种层用于纳米棒生长。 这提供了生产高纯度纳米棒并控制生长模式的简单方法。 本发明涵盖三种生长方式,包括纳米棒生长,薄膜生长和纳米多孔膜生长。

    Production of organic compound nanoparticles with high repetition rate ultrafast pulsed laser ablation in liquids
    18.
    发明授权
    Production of organic compound nanoparticles with high repetition rate ultrafast pulsed laser ablation in liquids 有权
    在液体中生产具有高重复率超快速脉冲激光烧蚀的有机复合纳米粒子

    公开(公告)号:US08992815B2

    公开(公告)日:2015-03-31

    申请号:US12951496

    申请日:2010-11-22

    申请人: Zhendong Hu Yong Che

    发明人: Zhendong Hu Yong Che

    摘要: Disclosed is a method of producing a chemically pure and stably dispersed organic nanoparticle colloidal suspension using an ultrafast pulsed laser ablation process. The method comprises irradiating a target of an organic compound material in contact with a poor solvent with ultrashort laser pulses at a high repetition rate and collecting the nanoparticles of the organic compound produced. The method may be implemented with a high repetition rate ultrafast pulsed laser source, an optical system for focusing and moving the pulsed laser beam, an organic compound target in contact with a poor solvent, and a solvent circulating system to cool the laser focal volume and collect the produced nanoparticle products. By controlling various laser parameters, and with optional poor solvent flow movement, the method provides stable colloids of dispersed organic nanoparticles in the poor solvent in the absence of any stabilizing agents.

    摘要翻译: 公开了使用超快脉冲激光烧蚀工艺制备化学纯的和稳定分散的有机纳米颗粒胶体悬浮液的方法。 该方法包括用高重复率的超短激光脉冲对与有害化合物接触的有机化合物材料进行照射,并收集生成的有机化合物的纳米颗粒。 该方法可以用高重复率超快脉冲激光源,用于聚焦和移动脉冲激光束的光学系统,与不良溶剂接触的有机化合物靶和溶剂循环系统来实现,以冷却激光焦点体积和 收集生产的纳米颗粒产品。 通过控制各种激光参数,并且具有可选的不良溶剂流动运动,该方法在不存在任何稳定剂的情况下在不良溶剂中提供分散的有机纳米颗粒的稳定胶体。

    METHOD OF FABRICATING AN ELECTROCHEMICAL DEVICE USING ULTRAFAST PULSED LASER DEPOSITION
    20.
    发明申请
    METHOD OF FABRICATING AN ELECTROCHEMICAL DEVICE USING ULTRAFAST PULSED LASER DEPOSITION 审中-公开
    使用超声波脉冲激光沉积制备电化学装置的方法

    公开(公告)号:US20120003395A1

    公开(公告)日:2012-01-05

    申请号:US12974780

    申请日:2010-12-21

    申请人: Yong Che Zhendong Hu

    发明人: Yong Che Zhendong Hu

    IPC分类号: C23C16/48 B05D5/12

    摘要: A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; depositing the first plasma on the substrate to form a first thin film; providing a second target material in the chamber; emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and depositing the second plasma on or above the first thin film to form a second thin film.

    摘要翻译: 提供一种制造多层薄膜电化学装置的方法。 该方法包括:在室中提供第一目标材料; 在所述腔室中提供衬底; 发射指向第一目标材料的第一间歇激光束以产生第一等离子体,其中第一间歇激光束的每个脉冲具有约20fs至约500ps的脉冲持续时间; 将第一等离子体沉积在衬底上以形成第一薄膜; 在腔室中提供第二靶材料; 发射指向所述第二目标材料的第二间歇激光束以产生第二等离子体,其中所述第二间歇激光束的每个脉冲具有约20fs至约500ps的脉冲持续时间; 以及将第二等离子体沉积在第一薄膜上或上方以形成第二薄膜。