摘要:
A chemical mechanical polishing apparatus and method can use an in-situ monitoring system. A measurement of a position of a carrier head and a sinusoidal first function can be used to define a second function that associates measurements from the series with positions on the substrate. For each measurement in a series from the in-situ monitoring system, the second function can be used to determine a position on the substrate where the measurement was taken. In addition, a measurement of the position of the carrier head, a time when the measurement of the substrate property is made, and a phase correction representing lag resulting from a processing delay in generating the measurement of the position of the carrier head can be used in determining a position on the substrate where a measurement of a substrate property was taken.
摘要:
A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.
摘要:
A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.
摘要:
A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.
摘要:
An eddy current monitoring system may include an elongated core. One or more coils may be coupled with the elongated core for producing an oscillating magnetic field that may couple with one or more conductive regions on a wafer. The core may be translated relative to the wafer to provide improved resolution while maintaining sufficient signal strength. An eddy current monitoring system may include a DC-coupled marginal oscillator for producing an oscillating magnetic field at a resonant frequency, where the resonant frequency may change as a result of changes to one or more conductive regions. Eddy current monitoring systems may be used to enable real-time profile control.
摘要:
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要:
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要:
A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.
摘要:
A polishing system can have a polishing pad with a polishing surface and a bottom surface that includes a recess with a thickness less than the thickness of the polishing pad. An in-situ monitoring module can be positioned in a cavity formed in part by the recess. A vent path is provided with an opening to the cavity.
摘要:
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.