Direct-conversion receiver and sub-harmonic frequency mixer thereof
    11.
    发明申请
    Direct-conversion receiver and sub-harmonic frequency mixer thereof 有权
    直接转换接收机及其次谐波频率混频器

    公开(公告)号:US20070242779A1

    公开(公告)日:2007-10-18

    申请号:US11403819

    申请日:2006-04-14

    IPC分类号: H04L27/22

    CPC分类号: H04B1/30

    摘要: Provided is a sub-harmonic frequency mixer having a structure in which two terminals of transistors receiving a Radio Frequency (RF) signal and a Local Oscillation (LO) signal are coupled. The frequency mixer is composed of a single-level structure of transistors and thus can be driven at a lower supply voltage compared to a common frequency mixer. A direct-conversion receiver employing such a frequency mixer needs an RF signal and an LO signal sources of single-phase. Therefore, the direct-conversion receiver has an architecture that simplifies a whole RF transceiver circuit and thus can be advantageously applied in implementing SoC (System-on-Chip) for a low power, high integration, low price and subminiature wireless transceiver circuit.

    摘要翻译: 提供了一种亚谐波混频器,其具有接收射频(RF)信号和本地振荡(LO)信号的晶体管的两个端子耦合的结构。 混频器由晶体管的单级结构组成,因此与普通的混频器相比可以在较低的电源电压下驱动。 采用这种混频器的直接转换接收机需要RF信号和单相的LO信号源。 因此,直接转换接收机具有简化整个RF收发器电路的架构,因此可以有利地应用于实现用于低功率,高集成度,低价格和超小型无线收发器电路的SoC(片上系统)。

    Apparatus for forming alignment film and method for fabricating liquid crystal display panel using the same
    12.
    发明申请
    Apparatus for forming alignment film and method for fabricating liquid crystal display panel using the same 有权
    用于形成取向膜的装置及使用其制造液晶显示面板的方法

    公开(公告)号:US20060283388A1

    公开(公告)日:2006-12-21

    申请号:US11317235

    申请日:2005-12-27

    申请人: Byoung Choi

    发明人: Byoung Choi

    IPC分类号: B05C13/00 B05C11/00

    CPC分类号: G02F1/133784

    摘要: An apparatus for forming an alignment film and a method for fabricating a liquid crystal display panel using the same are disclosed. A steam inspecting unit for inspecting a defective alignment film is disposed for two lines of rubbing equipment, so that a facility investment expense can be reduced and a space of a clean room can be effectively utilized. The apparatus for forming an alignment film comprises a rubbing equipment comprising at least one rubbing unit; and an alignment film inspecting unit installed between the two lines of rubbing equipment and inspecting an alignment film formed on a substrate.

    摘要翻译: 公开了一种用于形成取向膜的装置和使用其的液晶显示面板的制造方法。 为了对两线摩擦设备配置用于检查不良对准膜的蒸汽检查单元,能够减少设备投资费用,能够有效利用洁净室的空间。 用于形成取向膜的装置包括包括至少一个摩擦单元的摩擦设备; 以及安装在两条摩擦设备之间并对形成在基板上的取向膜进行检查的取向膜检查单元。

    Thin film transistor and method of fabricating the same

    公开(公告)号:US20060246639A1

    公开(公告)日:2006-11-02

    申请号:US11361727

    申请日:2006-02-23

    IPC分类号: H01L21/84

    CPC分类号: H01L29/78603 H01L29/66757

    摘要: A thin film transistor (TFT) and a method of fabricating the same, in which a fabrication process is simplified and damage to a gate insulating layer is decreased. The method of fabricating the TFT includes forming at least one buffer layer on a substrate, forming a first semiconductor layer formed on the buffer layer and a second semiconductor layer by depositing a semiconductor doped with a dopant on the first semiconductor layer, patterning the second semiconductor layer to form source and drain regions, forming a gate insulating layer on the source and drain regions, and forming a gate electrode on the gate insulating layer.

    Direct-conversion frequency mixer
    14.
    发明申请
    Direct-conversion frequency mixer 有权
    直接转换混频器

    公开(公告)号:US20060088122A1

    公开(公告)日:2006-04-27

    申请号:US11226045

    申请日:2005-09-14

    IPC分类号: H04L27/18

    摘要: Provided is a direct-conversion frequency mixer for down converting a radio frequency (RF) signal into a baseband signal, in which a single phase RF signal and a quadrature location oscillation (quadrature LO) signal are used to generate the baseband signal, the frequency mixer comprising a first frequency mixing unit that uses quadrature LO signals having respective phases of 0 degrees and 180 degrees to directly down-convert the single phase RF signal into the in-phase baseband signal, and a second frequency mixing unit that uses quadrature LO signals having respective phases of 90 degrees and 270 degrees to directly down-convert the single phase RF signal into the quadrature-phase baseband signal, whereby drains and sources of the transistor for receiving the quadrature LO signaland the transistor for receiving the RF signal are connected in common, thus enabling low power source voltage driving.

    摘要翻译: 提供了一种用于将射频(RF)信号下变频为基带信号的直接转换混频器,其中使用单相RF信号和正交位置振荡(正交LO)信号来产生基带信号,频率 混频器,其包括使用具有0度和180度的相位的正交LO信号的第一频率混合单元,以将单相RF信号直接下变频为同相基带信号;以及第二混频单元,其使用正交LO信号 具有90度和270度的各个相位以将单相RF信号直接下变频为正交相位基带信号,由此用于接收正交LO信号的晶体管的漏极和源极以及用于接收RF信号的晶体管被​​连接在 通用,从而实现低电源电压驱动。

    Control circuit for delay locked loop
    15.
    发明申请
    Control circuit for delay locked loop 有权
    延迟锁定环路的控制电路

    公开(公告)号:US20050231248A1

    公开(公告)日:2005-10-20

    申请号:US10878450

    申请日:2004-06-28

    申请人: Sun Yang Byoung Choi

    发明人: Sun Yang Byoung Choi

    CPC分类号: H03L7/0812 H03L7/095

    摘要: Provided is directed to a delay locked loop control circuit capable of reducing a test time and preventing a yield from being reduced, by preventing a failure due to a charge sharing and a failure in a specific frequency and voltage due to a noise of a feedback clock, by means of including: a level setting unit for setting an initial level of a locked state signal, which is decided whether or not phases of a reference clock and a feedback clock are aligned; a signal generation unit for generating a third control signal according to a first control signal comparing phases of the reference clock and the feedback clock, and a second control signal checking out phases of the reference clock and the feedback clock in every predetermined time; a level maintaining unit for maintaining a level of the locked state signal according to the locked state signal and a fourth control signal comparing a signal delaying the feedback clock for a predetermined time with the reference clock; a detection unit for varying a level of the locked state signal by detecting whether or not phases of a reference clock and a feedback clock are aligned according to the first to third control signals; and a control unit for controlling a variation of the locked state signal by means of the detection unit according to the fourth control signal.

    摘要翻译: 提供了一种延迟锁定环控制电路,其能够通过防止由于反馈时钟的噪声导致的电荷共享和特定频率和电压中的故障而导致的故障,从而减少测试时间并且防止产量降低 通过包括:电平设定单元,用于设定锁定状态信号的初始电平,判定参考时钟和反馈时钟的相位是否对齐; 信号生成单元,用于根据比较参考时钟和反馈时钟的相位的第一控制信号和在每个预定时间内检出参考时钟和反馈时钟的相位的第二控制信号来产生第三控制信号; 电平维持单元,用于根据锁定状态信号保持锁定状态信号的电平;以及第四控制信号,将延迟预定时间的反馈时钟的信号与参考时钟进行比较; 检测单元,用于通过检测参考时钟和反馈时钟的相位是否根据第一至第三控制信号对准来改变锁定状态信号的电平; 以及控制单元,用于根据第四控制信号通过检测单元来控制锁定状态信号的变化。

    Electroluminescent element and electronic device including the same
    16.
    发明申请
    Electroluminescent element and electronic device including the same 有权
    电致发光元件和包括其的电子器件

    公开(公告)号:US20070241662A1

    公开(公告)日:2007-10-18

    申请号:US11442875

    申请日:2006-05-30

    IPC分类号: H05B33/00

    CPC分类号: H05B33/20 Y10T428/2929

    摘要: An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.

    摘要翻译: 包括电致发光元件的电致发光元件和电子器件包括具有二氧化硅层作为基体的玻璃模板,电极和发光材料。 由于根据本发明的电致发光元件包括二氧化硅作为基质,所以即使未填充玻璃模板的发光层和电极之间的空间,电致发光元件也具有稳定的结构。 此外,这种电致发光元件可以容易地制备,并且因此可以有效地应用于诸如显示装置,照明装置和背光单元的各种电子装置。

    Non-volatile memory device and fabrication method thereof
    17.
    发明申请
    Non-volatile memory device and fabrication method thereof 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US20070122978A1

    公开(公告)日:2007-05-31

    申请号:US11604222

    申请日:2006-11-27

    IPC分类号: H01L21/336 H01L29/76

    摘要: A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

    摘要翻译: 非易失性存储器件包括在衬底上的缓冲氧化膜; 缓冲氧化膜上的多晶硅层; 所述多晶硅层上的硅氮化物(SiON)层,所述SiON层上的第一绝缘体层,所述第一绝缘体上的氮化物膜,所述氮化物膜上的第二绝缘体层,所述第二绝缘体上的电极和源极 /漏极在多晶硅层。

    Nanowires comprising metal nanodots and method for producing the same
    18.
    发明申请
    Nanowires comprising metal nanodots and method for producing the same 失效
    包含金属纳米点的纳米线及其制造方法

    公开(公告)号:US20070111493A1

    公开(公告)日:2007-05-17

    申请号:US11506091

    申请日:2006-08-17

    申请人: Eun Lee Byoung Choi

    发明人: Eun Lee Byoung Choi

    IPC分类号: H01L21/44 H01L23/52

    摘要: Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, metal nanodots can be uniformly disposed in the nanowires, and nanowires having various physical properties can be produced by controlling the size and interval of the nanodots. Therefore, the nanowires can be effectively used in a variety of applications, including electronic devices, such as field effect transistors (FETs), sensors, photodetectors, light emitting diodes (LEDs), and laser diodes (LDs).

    摘要翻译: 提供了制备纳米线的纳米线方法。 纳米线包括均匀地设置在其中的多个金属纳米点和芯部分,其中多个金属纳米点中的每一个耦合到芯部分。 根据该方法,金属纳米点可以均匀地设置在纳米线中,并且可以通过控制纳米点的尺寸和间隔来制造具有各种物理性质的纳米线。 因此,纳米线可以有效地用于各种应用中,包括诸如场效应晶体管(FET),传感器,光电检测器,发光二极管(LED)和激光二极管(LD)的电子器件。

    Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same
    19.
    发明申请
    Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same 审中-公开
    包含无空隙的半导体纳米晶层的发光器件及其制造方法

    公开(公告)号:US20070069202A1

    公开(公告)日:2007-03-29

    申请号:US11390851

    申请日:2006-03-28

    IPC分类号: H01L51/00

    摘要: A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

    摘要翻译: 提供了包括半导体纳米晶层的发光器件和用于制造发光器件的方法。 发光器件包括其填充有填充材料的空隙的半导体纳米晶体层。 根据发光装置,由于在半导体纳米晶层的纳米晶粒之间形成的空隙填充有填充材料,所以通过空隙的电流泄漏的发生被最小化,这使得器件具有延长的使用寿命,高发光度 效率和稳定性的提高。