公开(公告)号：US20050023610A1

公开(公告)日：2005-02-03

申请号：US10700896

申请日：2003-11-03

申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Olivier Rayssac

发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Olivier Rayssac

IPC分类号： H01L21/762 ,  H01L27/01

CPC分类号： H01L21/76251

摘要： A semiconductor-on-insulator structure for electronics, optics or optoelectronics, in which a semiconductor layer includes desirable elastic constraints. The structure includes a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer. The semiconductor layer has elastic constraints, and the insulating layer is made of an electrically insulating material having a viscosity temperature TG that is sufficiently high so as to protect the semiconductor layer from loss of the elastic constraints when the structure is exposed to a temperature of about 950° C. or more. Also described is a process for producing such a semiconductor-on-insulator structure.

摘要翻译： 用于电子，光学或光电子学的绝缘体上半导体结构，其中半导体层包括期望的弹性约束。 该结构包括衬底，衬底上的绝缘层和绝缘层上的半导体层。 半导体层具有弹性约束，并且绝缘层由具有足够高的粘度温度TG的电绝缘材料制成，以便当该结构暴露于大约的温度时保护半导体层免于弹性约束的损失 950℃以上。 还描述了一种用于制造这种绝缘体上半导体结构的方法。

公开(公告)号：US20050170611A1

公开(公告)日：2005-08-04

申请号：US11075273

申请日：2005-03-07

申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Yves Levaillant

发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Yves Levaillant

IPC分类号： H01L21/762 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/84

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259

摘要： The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.

摘要翻译： 本发明涉及从施主晶片转移有用层的方法，该施主晶片在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。 这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。 材料层还可以包括可以相互选择性地去除的子层。

公开(公告)号：US20050150447A1

公开(公告)日：2005-07-14

申请号：US11075323

申请日：2005-03-07

申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/762 ,  C30B23/00

CPC分类号： H01L21/02032 ,  H01L21/76254

摘要： The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.

摘要翻译： 本发明涉及一种可回收的施主晶片，其包括基板及其上的成形层，其中所形成的层具有足以提供（a）至少两个用于从其分离的有用层的厚度，以及（b）可以将其移除到 在与供体晶片分离之前平坦化有用层的暴露表面。

公开(公告)号：US07586154B2

公开(公告)日：2009-09-08

申请号：US11831217

申请日：2007-07-31

申请人： Bruno Ghyselen ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L21/30

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

摘要： A substrate suitable for producing a high frequency electronic circuit. This substrate includes a support substrate having a controlled amount of interstitial oxygen and which is treated to precipitate at least some of the oxygen therein; and a useful layer supported by the support substrate. Advantageously, the support substrate has high resistivity and includes oxygen precipitates beneath the useful layer while also being free of depleted zones of oxygen precipitates adjacent the useful layer. This is prepared by the methods disclosed herein which are applicable in particular to SOI substrates.

摘要翻译： 适用于生产高频电子电路的衬底。 该衬底包括具有受控量的间隙氧的支撑衬底，并被处理以沉淀其中的至少一部分氧; 以及由支撑基板支撑的有用层。 有利地，支撑衬底具有高电阻率并且在有用层下方包括氧沉淀物，同时也没有与有用层相邻的氧沉淀物的耗尽区域。 这通过本文所公开的方法制备，其特别适用于SOI衬底。

公开(公告)号：US20070269663A1

公开(公告)日：2007-11-22

申请号：US11831217

申请日：2007-07-31

申请人： Bruno Ghyselen ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： B32B9/04

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

摘要： A substrate suitable for producing a high frequency electronic circuit. This substrate includes a support substrate having a controlled amount of interstitial oxygen and which is treated to precipitate at least some of the oxygen therein; and a useful layer supported by the support substrate. Advantageously, the support substrate has high resistivity and includes oxygen precipitates beneath the useful layer while also being free of depleted zones of oxygen precipitates adjacent the useful layer. This is prepared by the methods disclosed herein which are applicable in particular to SOI substrates.

摘要翻译： 适用于生产高频电子电路的衬底。 该衬底包括具有受控量的间隙氧的支撑衬底，并被处理以沉淀其中的至少一部分氧; 以及由支撑基板支撑的有用层。 有利地，支撑衬底具有高电阻率并且在有用层下方包括氧沉淀物，同时也没有与有用层相邻的氧沉淀物的耗尽区域。 这通过本文所公开的方法制备，其特别适用于SOI衬底。

公开(公告)号：US07902038B2

公开(公告)日：2011-03-08

申请号：US10474984

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac ,  Bruno Ghyselen

发明人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac ,  Bruno Ghyselen

IPC分类号： H01L23/58

CPC分类号： B81C99/008 ,  H01L21/76254 ,  Y10S438/958

摘要： The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at least one of said faces is provided, rendering the mechanical hold at the interface at such a controlled level to be compatible with a subsequent detachment.

摘要翻译： 本发明涉及一种可拆卸基板的制造方法，其特征在于，包括：通过使用分子粘合固定，在基板的一个面上的一个面的固定来制造界面的方法步骤， 提供了用于至少一个所述面部的处理台，使得在该受控水平处的界面处的机械保持与随后的分离兼容。

公开(公告)号：US07268060B2

公开(公告)日：2007-09-11

申请号：US10968695

申请日：2004-10-18

申请人： Bruno Ghyselen ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L21/30

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

摘要： A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.

摘要翻译： 一种在具有高电阻率的支持体上制造含有有用的半导体层的基板的方法，该方法包括：制备含有受控量的间隙氧的半导体材料的基底，热处理基底以实现间隙氧的至少部分沉淀 在基底基板的表面上，在基底基板的表面上从受控的深度去除表层，形成有用层，基底基板作为有用层的支撑体。 该方法特别适用于用于形成高频电子电路的具有高电阻率的SOI衬底。

公开(公告)号：US06991995B2

公开(公告)日：2006-01-31

申请号：US10784032

申请日：2004-02-20

申请人： Cécile Aulnette ,  Benoît Bataillou ,  Bruno Ghyselen ,  Hubert Moriceau

发明人： Cécile Aulnette ,  Benoît Bataillou ,  Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/76259

摘要： A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.

摘要翻译： 一种制造具有至少一个支撑基板和超薄层的半导体结构的方法。 该方法包括将支撑衬底接合到源衬底，沿着弱区分离有用层以获得包括至少转移的有用层和支撑衬底的中间结构，以及处理转移的有用层以获得超薄层 支撑基板。 源极基板包括限定有用层的前表面和弱化区，并且有用层足够厚以承受热处理而不在其中形成缺陷，使得其可以减小厚度以形成超薄层 。 所得的超薄层适用于电子，光电子学或光学领域的应用。

公开(公告)号：US20050112845A1

公开(公告)日：2005-05-26

申请号：US10968695

申请日：2004-10-18

申请人： Bruno Ghyselen ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/322 ,  H01L21/762 ,  H01L29/32 ,  H01L21/30

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

摘要： A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.

摘要翻译： 一种在具有高电阻率的支持体上制造含有有用的半导体层的基板的方法，该方法包括：制备含有受控量的间隙氧的半导体材料的基底，热处理基底以实现间隙氧的至少部分沉淀 在基底基板的表面上，在基底基板的表面上从受控的深度去除表层，形成有用层，基底基板作为有用层的支撑体。 该方法特别适用于用于形成高频电子电路的具有高电阻率的SOI衬底。

公开(公告)号：US06964914B2

公开(公告)日：2005-11-15

申请号：US10349295

申请日：2003-01-22

申请人： Bruno Ghyselen ,  Fabrice Letertre ,  Carlos Mazure

发明人： Bruno Ghyselen ,  Fabrice Letertre ,  Carlos Mazure

IPC分类号： C30B29/38 ,  C23C16/01 ,  C23C16/34 ,  C30B25/02 ,  C30B29/04 ,  H01L21/20 ,  H01L21/762 ,  H01L21/30 ,  H01L21/46 ,  H01L21/76

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.

摘要翻译： 一种制造由半导体材料制成的自立式基板的方法。 提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。 通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。 第三种材料优选是单晶材料。 而且，至少将衬底加热到​​外延生长温度来保存接合界面的可去除特性。 第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时 从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。