公开(公告)号：US09758697B2

公开(公告)日：2017-09-12

申请号：US14639598

申请日：2015-03-05

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Reiss ,  Dana Sauter Van Ness ,  Viet Lam ,  Renhe Jia

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C09K13/00 ,  H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  C09G1/00 ,  H01L21/321 ,  C23F1/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09G1/00 ,  C23F1/14 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212

Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.

公开(公告)号：US09597768B1

公开(公告)日：2017-03-21

申请号：US14849066

申请日：2015-09-09

Applicant: Cabot Microelectronics Corporation

Inventor： Prativa Pandey ,  Juyeon Chang ,  Brian Reiss

IPC: H01L21/302 ,  H01L21/461 ,  B24B37/04 ,  C09G1/02

CPC classification number: B24B37/044 ,  C08K2003/2213 ,  C09G1/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.

公开(公告)号：US09238753B2

公开(公告)日：2016-01-19

申请号：US13799920

申请日：2013-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Reiss ,  Glenn Whitener

IPC: H01L21/302 ,  C09G1/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其含有二氧化铈研磨剂，一种或多种非离子聚合物，任选的一种或多种膦酸，任选的一种或多种含氮两性离子化合物，任选的一种或多种磺酸共聚物，任选的一种或多种阴离子 共聚物，任选的一种或多种包含季胺的聚合物，任选的一种或多种调节抛光组合物的pH的化合物，水和任选的一种或多种添加剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。