公开(公告)号：US09142715B2

公开(公告)日：2015-09-22

申请号：US13099127

申请日：2011-05-02

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim ,  Hwa Mok Kim

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/02

CPC分类号： H01L33/10 ,  H01L33/025 ,  H01L2933/0091

摘要： An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及一种发光二极管（LED），其包括衬底，布置在衬底上的第一氮化物半导体层，布置在第一氮化物半导体层上的有源层，布置在有源层上的第二氮化物半导体层 层，设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层，在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR），所述基板布置在所述DBR和所述第三氮化物半导体层之间。

公开(公告)号：US08153509B2

公开(公告)日：2012-04-10

申请号：US12693907

申请日：2010-01-26

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

IPC分类号： H01L21/329 ,  H01L33/02 ,  H01L21/428

CPC分类号： H01L33/0079

摘要： Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.

摘要翻译： 公开了使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电类型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。 因此，在激光剥离过程中，可以容易地实现激光束的聚焦，并且防止外延层破裂或断裂。 激光剥离处理由包括加热器的激光剥离装置进行。

公开(公告)号：US20110053302A1

公开(公告)日：2011-03-03

申请号：US12693907

申请日：2010-01-26

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

IPC分类号： H01L33/00 ,  B23K26/00

CPC分类号： H01L33/0079

摘要： Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.

摘要翻译： 公开了使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电类型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。 因此，在激光剥离过程中，可以容易地实现激光束的聚焦，并且防止外延层破裂或断裂。 激光剥离处理由包括加热器的激光剥离装置进行。

公开(公告)号：US08410506B2

公开(公告)日：2013-04-02

申请号：US13077371

申请日：2011-03-31

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/382

摘要： Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

公开(公告)号：US08772805B2

公开(公告)日：2014-07-08

申请号：US13018557

申请日：2011-02-01

申请人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

公开(公告)号：US08791483B2

公开(公告)日：2014-07-29

申请号：US13077254

申请日：2011-03-31

申请人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

摘要翻译： 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

公开(公告)号：US08618565B2

公开(公告)日：2013-12-31

申请号：US12986774

申请日：2011-01-07

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/382

摘要： Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

摘要翻译： 提供了一种高效率发光二极管（LED），其包括：支撑基板; 位于所述支撑基板上的半导体堆叠，所述半导体堆叠包括p型化合物半导体层，有源层和n型化合物半导体层; 位于所述支撑衬底和所述半导体堆叠之间并与所述半导体堆叠欧姆接触的第一电极; 位于所述第一电极的暴露于所述半导体叠层外部的部分上的第一焊盘; 以及位于半导体堆叠上的第二电极。 突起形成在半导体堆叠的暴露表面上。 此外，第二电极可以位于第一电极和支撑衬底之间，并且通过半导体叠层的开口与n型化合物半导体层接触。

公开(公告)号：US20130292645A1

公开(公告)日：2013-11-07

申请号：US13997873

申请日：2011-12-06

申请人： Jun Ho Yun ,  Ki Bum Nam ,  Joon Hee Lee ,  Chang Youn Kim ,  Hong Jae Yoo ,  Sung Hoon Hong

发明人： Jun Ho Yun ,  Ki Bum Nam ,  Joon Hee Lee ,  Chang Youn Kim ,  Hong Jae Yoo ,  Sung Hoon Hong

IPC分类号： H01L33/14

CPC分类号： H01L33/14 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44

摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.

摘要翻译： 本文公开了一种高效率发光二极管。 发光二极管包括：位于支撑衬底上的半导体堆叠; 反射金属层，位于所述支撑基板和所述半导体堆叠之间，以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体叠层的沟槽; 位于所述半导体叠层的n型化合物半导体层上的第一电极焊盘; 电极延伸部，其从所述第一电极焊盘延伸并定位在所述沟槽区域上; 以及介于所述第一电极焊盘和所述半导体堆叠之间的上绝缘层。 此外，n型化合物半导体层包括n型接触层，n型接触层的Si掺杂浓度为5〜7×1018 / cm3，厚度为5〜10μm。

公开(公告)号：US20110297972A1

公开(公告)日：2011-12-08

申请号：US13202210

申请日：2010-03-24

申请人： Won Cheol Seo ,  Dae Sung Kal ,  Joon Hee Lee ,  Chang Youn Kim

发明人： Won Cheol Seo ,  Dae Sung Kal ,  Joon Hee Lee ,  Chang Youn Kim

IPC分类号： H01L33/62

CPC分类号： H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2933/0016

摘要： A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.

摘要翻译： 公开了一种具有多个发光单元的发光器件。 发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开，每个所述发光单元包括p型下半导体层，有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开，各个p电极电连接到相应的下半导体层，每个p电极具有延伸到相邻的一个 发光单元; 设置在各个发光单元的上表面上的n电极，其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧 发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线，电线通过侧绝缘层与发光单元的侧面间隔开。

公开(公告)号：US09136432B2

公开(公告)日：2015-09-15

申请号：US13997873

申请日：2011-12-06

申请人： Jun Ho Yun ,  Ki Bum Nam ,  Joon Hee Lee ,  Chang Youn Kim ,  Hong Jae Yoo ,  Sung Hoon Hong

发明人： Jun Ho Yun ,  Ki Bum Nam ,  Joon Hee Lee ,  Chang Youn Kim ,  Hong Jae Yoo ,  Sung Hoon Hong

IPC分类号： H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

CPC分类号： H01L33/14 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44

摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.

摘要翻译： 本文公开了一种高效率发光二极管。 发光二极管包括：位于支撑衬底上的半导体堆叠; 反射金属层，位于所述支撑基板和所述半导体堆叠之间，以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体叠层的沟槽; 位于所述半导体叠层的n型化合物半导体层上的第一电极焊盘; 电极延伸部，其从所述第一电极焊盘延伸并定位在所述沟槽区域上; 以及介于所述第一电极焊盘和所述半导体堆叠之间的上绝缘层。 此外，n型化合物半导体层包括n型接触层，n型接触层的Si掺杂浓度为5〜7×1018 / cm3，厚度为5〜10μm。