Treatment for cancers
    19.
    发明授权
    Treatment for cancers 失效
    癌症治疗

    公开(公告)号:US07763658B2

    公开(公告)日:2010-07-27

    申请号:US10758589

    申请日:2004-01-15

    IPC分类号: A61K31/16

    摘要: One embodiment of the present invention is a method of treating a subject with a multi-drug resistant cancer. The method comprises administering to the subject an effective amount of a compound represented by Structural Formula (I): Y is a covalent bond or a substituted or unsubstituted straight chained hydrocarbyl group, or, Y, taken together with both >C═Z groups to which it is bonded, is a substituted or unsubstituted aromatic group. R1-R4 are independently —H, an aliphatic group, a substituted aliphatic group, an aryl group or a substituted aryl group, or R1 and R3 taken together with the carbon and nitrogen atoms to which they are bonded, and/or R2 and R4 taken together with the carbon and nitrogen atoms to which they are bonded, form a non-aromatic heterocyclic ring optionally fused to an aromatic ring. Preferably R1 and R2 are the same and R3 and R4 are the same. R5-R6 are independently —H, an aliphatic group, a substituted aliphatic group, an aryl group or a substituted aryl group. Z is ═O or ═S.

    摘要翻译: 本发明的一个实施方案是用多药耐药性癌症治疗受试者的方法。 该方法包括向受试者施用有效量的由结构式(I)表示的化合物:Y是共价键或取代或未取代的直链烃基,或Y与两个> C = Z基团一起加到 其是键合的,是取代或未取代的芳基。 R 1 -R 4独立地为-H,脂族基团,取代的脂族基团,芳基或取代的芳基,或者R 1和R 3与它们所键合的碳原子和氮原子一起,和/或R 2和R 4 与它们所键合的碳原子和氮原子一起形成任选地与芳环稠合的非芳族杂环。 优选地,R 1和R 2相同,并且R 3和R 4相同。 R5-R6独立地是-H,脂族基团,取代的脂族基团,芳基或取代的芳基。 Z为═O或═S。

    Fabrication of nano-scale temperature sensors and heaters
    20.
    发明授权
    Fabrication of nano-scale temperature sensors and heaters 失效
    制造纳米级温度传感器和加热器

    公开(公告)号:US06905736B1

    公开(公告)日:2005-06-14

    申请号:US10084688

    申请日:2002-02-27

    摘要: The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga+ ion beam can be used to decompose W(CO)6 molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH3)3Pt in the present case. Because of the Ga+ beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.

    摘要翻译: 使用聚焦离子束(FIB)技术制造纳米级温度传感器和纳米级加热器的方法。 用于沉积金属纳米带以形成传感器的方法是离子束辅助化学气相沉积(CVD)。 FIB Ga + +离子束可用于分解W(CO)6分子,以将钨纳米带沉积在合适的基底上。 相同的衬底也可以用于Pt纳米带沉积。 在这种情况下,Pt的前体可以是三甲基铂(CH 3 3)3 N 3 Pt。 由于沉积中使用的Ga + + +光束,Pt和W纳米条带都可以包含一定百分比的Ga杂质,我们分别表示为Pt(Ga)和W(Ga)。 我们对Pt(Ga)/ W(Ga)纳米级结的响应的表征表明其具有约5.4mV /℃的温度系数。这是比常规K型热电偶大约130倍的因子。