公开(公告)号：US08610206B2

公开(公告)日：2013-12-17

申请号：US13030815

申请日：2011-02-18

申请人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

发明人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/7835 ,  H01L29/7838

摘要： A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A self-aligned RESURF region is disposed within the drift region between the gate and the drain region. PI gate structures including an upper polysilicon layer are disposed near the drain region, such that the upper polysilicon layer can serve as a hard mask for the formation of the double RESURF structure, thereby allowing for self-alignment of the double RESURF structure.

摘要翻译： 半导体器件包括源极区域，漏极区域和源极区域与漏极区域之间的漂移区域。 分离栅极设置在漂移区域的一部分上，并且在源极和漏极区域之间。 分离栅极包括由栅极氧化物层隔开的第一和第二栅电极。 自对准RESURF区域设置在栅极和漏极区域之间的漂移区域内。 包括上多晶硅层的PI栅极结构设置在漏极区附近，使得上多晶硅层可以用作形成双RESURF结构的硬掩模，从而允许双RESURF结构的自对准。

公开(公告)号：US20130249007A1

公开(公告)日：2013-09-26

申请号：US13425221

申请日：2012-03-20

申请人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

发明人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

IPC分类号： H01L27/088 ,  H01L21/336

CPC分类号： H01L29/7816

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a first source/drain region, a second source/drain region, a first stack structure and a second stack structure. The first source/drain region is formed in the substrate. The second source/drain region is formed in the substrate. The first stack structure is on the substrate between the first source/drain region and the second source/drain region. The first stack structure comprises a first dielectric layer and a first conductive layer on the first dielectric layer. The second stack structure is on the first stack structure. The second stack structure comprises a second dielectric layer and a second conductive layer on the second dielectric layer.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括衬底，第一源极/漏极区域，第二源极/漏极区域，第一堆叠结构和第二堆叠结构。 第一源极/漏极区域形成在衬底中。 第二源极/漏极区域形成在衬底中。 第一堆叠结构在第一源极/漏极区域和第二源极/漏极区域之间的衬底上。 第一堆叠结构包括第一介电层和第一介电层上的第一导电层。 第二个堆栈结构是第一个堆叠结构。 第二堆叠结构包括第二电介质层和第二电介质层上的第二导电层。

公开(公告)号：US20120326261A1

公开(公告)日：2012-12-27

申请号：US13166091

申请日：2011-06-22

申请人： Wing-Chor Chan ,  Chung-Yu Hung ,  Chien-Wen Chu

发明人： Wing-Chor Chan ,  Chung-Yu Hung ,  Chien-Wen Chu

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0649 ,  H01L29/402

摘要： A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall.

摘要翻译： 提供了一种半导体结构及其制造方法。 半导体结构包括阱区，电介质结构，第一掺杂层，第二掺杂层和第一掺杂区。 电介质结构在阱区上。 电介质结构具有彼此相对的第一电介质侧壁和第二电介质侧壁。 电介质结构包括在第一电介质侧壁和第二电介质侧壁之间的第一电介质部分和第二电介质部分。 第一掺杂层位于第一电介质部分和第二电介质部分之间的阱区上。 第二掺杂层在第一掺杂层上。 第一掺杂区位于第一电介质侧壁上的阱区中。

公开(公告)号：US20110204441A1

公开(公告)日：2011-08-25

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US20070108520A1

公开(公告)日：2007-05-17

申请号：US11399427

申请日：2006-04-07

申请人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

摘要翻译： 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US6116376A

公开(公告)日：2000-09-12

申请号：US339034

申请日：1999-06-23

申请人： Chien-Wen Chu

发明人： Chien-Wen Chu

IPC分类号： F01N1/08 ,  F01N1/10 ,  F01N1/24

CPC分类号： F01N1/10 ,  F01N1/083 ,  F01N1/089 ,  F01N1/24

摘要： A muffler which reduces engine noise at lower operating speeds includes two spacers installed within a cylinder that is divided into a front chamber, a resonance canceling chamber and a noise canceling chamber. A first pressure returning tube and a second pressure returning tube are serially connected within the cylinder and a plurality of gas holes are circularly installed within the first pressure returning tube and the second pressure returning tube so that the first pressure returning tube and the second pressure returning tube pass through the front chamber, resonance cancelling chamber and noise cancelling chamber. A spacer circularly installed with a plurality of through holes is installed within the front chamber and the latter is divided into an expansion chamber and an air pressure regulating chamber. A central hole is located in the center of the spacer. The front end of the first pressure returning tube is placed in the central hole of the spacer and a gap is formed between the front end of first pressure returning tube and the central hole of the spacer.

摘要翻译： 在较低运行速度下减少发动机噪声的消音器包括安装在汽缸内的两个间隔件，其被分成前室，谐振消除室和噪声消除室。 第一压力返回管和第二压力返回管串联连接在气缸内，并且多个气孔圆形地安装在第一压力返回管和第二压力返回管内，使得第一压力返回管和第二压力返回 管通过前室，共振消除室和噪声消除室。 在前室内安装有圆形安装有多个通孔的间隔件，并将其分隔成膨胀室和空气压力调节室。 中心孔位于间隔件的中心。 第一压力返回管的前端被放置在间隔件的中心孔中，并且在第一压力返回管的前端和间隔件的中心孔之间形成间隙。

公开(公告)号：US08362558B2

公开(公告)日：2013-01-29

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/02

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US08125031B2

公开(公告)日：2012-02-28

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/02

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

公开(公告)号：US08017486B2

公开(公告)日：2011-09-13

申请号：US11767205

申请日：2007-06-22

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US07829408B2

公开(公告)日：2010-11-09

申请号：US12429951

申请日：2009-04-24

申请人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L21/8238

CPC分类号： H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

摘要翻译： 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。