摘要:
An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
摘要:
An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
摘要:
An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
摘要:
An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
摘要:
A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.
摘要:
In accordance with an embodiment, a method for exception handling comprises accessing an exception type for an exception, filtering historical data based on at least one defined criterion to provide a data train comprising data sets, assigning a weight to each data set, and providing a current control parameter. The data sets each comprise a historical condition and a historical control parameter, and the weight assigned to each data set is based on each historical condition. The current control parameter is provided using the weight and the historical control parameter for each data set.
摘要:
A method of extending advanced process control (APC) models includes constructing an APC model table including APC model parameters of a plurality of products and a plurality of work stations. The APC model table includes empty cells and cells filled with existing APC model parameters. Average APC model parameters of the existing APC model parameters are calculated, and filled into the empty cells as initial values. An iterative calculation is performed to update the empty cells with updated values.
摘要:
The present disclosure describes a semiconductor manufacturing apparatus. The apparatus includes a processing chamber designed to perform a process to a wafer; an electrostatic chuck (E-chuck) configured in the processing chamber and designed to secure the wafer, wherein the E-chuck includes an electrode and a dielectric feature formed on the electrode; a tuning structure designed to hold the E-chuck to the processing chamber by clamping forces, wherein the tuning structure is operable to dynamically adjust the clamping forces; a sensor integrated with the E-chuck and sensitive to the clamping forces; and a process control module for controlling the tuning structure to adjust the clamping forces based on pre-measurement data from the wafer and sensor data from the sensor.
摘要:
The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.
摘要:
A method includes providing a plurality of failure dies, and performing a chip probing on the plurality of failure dies to generate a data log comprising electrical characteristics of the plurality of failure dies. An automatic net tracing is performed to trace failure candidate nodes in the failure dies. A failure layer analysis is performed on results obtained from the automatic net tracing. Physical failure analysis (PFA) samples are selected from the plurality of failure dies using results obtained in the step of performing the failure layer analysis.