公开(公告)号：US20050012914A1

公开(公告)日：2005-01-20

申请号：US10918863

申请日：2004-08-16

Applicant: Burn Lin

Inventor： Burn Lin

IPC: G03F7/20 ,  G03F9/00 ,  G03B27/42

CPC classification number: G03F7/70283 ,  G03F7/70358 ,  G03F7/70466 ,  G03F9/7076

Abstract: A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned. By repeating this sequence across the wafer twice, the patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby create the patterning in the manufacture of the integrated circuit device.

Abstract translation: 描述了一种新的光刻曝光设备。 该装置可以包括例如光刻步进器或扫描器。 晶片台包括支撑半导体晶片的装置。 掩模台包括保持第一掩模和第二掩模并保持第一掩模和第二掩模之间的固定相对位置的装置。 掩模台还可以包括对准每个掩模的独立装置。 光源包括选择性地通过第一掩模和第二掩模之一照射光化光的装置。 成像透镜能够将光化学光聚焦到半导体晶片上。 提供了使用掩模阶段的步骤和扫描方法。 第一掩模和第二掩模被加载到光刻曝光设备的掩模级中。 第一个掩模和第二个掩模对齐。 第一个掩模被扫描。 然后将晶片加工成台阶。 第二个面罩被扫描。 通过跨晶片重复该序列两次，因此第一掩模和第二掩模的图案在每个场中叠加。 显影光致抗蚀剂层，从而在集成电路器件的制造中形成图案化。

公开(公告)号：US20050147921A1

公开(公告)日：2005-07-07

申请号：US11043304

申请日：2005-01-26

Applicant: Chin-Hsiang Lin ,  Burn Lin

Inventor： Chin-Hsiang Lin ,  Burn Lin

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/001 ,  G03F7/201 ,  G03F7/203 ,  G03F7/70408

Abstract: Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.

Abstract translation: 提供了高分辨率光刻系统和方法。 在一个示例中，用于在衬底上产生图案的方法包括将图案分离成至少包含沿第一方向定向的线的第一子图案和包含沿第二方向定向的线的第二子图案。 使用第一驻波干涉图案，在基板上的第一感光材料层上产生沿第一方向取向的线。 创建的线的一部分被修剪以创建第一子图案。 在形成第一子图案之后，将第二层感光材料施加到基板上。 使用第二驻波干涉图形在第二层上产生朝向第二方向的线。 创建的线的一部分被修剪以创建第二子图案。

公开(公告)号：US20050100798A1

公开(公告)日：2005-05-12

申请号：US10964842

申请日：2004-10-13

Applicant: Burn Lin ,  Jeng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

Inventor： Burn Lin ,  Jeng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

IPC: G03C5/00 ,  G03F1/46 ,  G03F1/54 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00

CPC classification number: G03F1/50 ,  G03F1/46

Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

Abstract translation: 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

公开(公告)号：US20050042552A1

公开(公告)日：2005-02-24

申请号：US10644356

申请日：2003-08-19

Applicant: Tsai-Sheng Gau ,  Burn Lin

Inventor： Tsai-Sheng Gau ,  Burn Lin

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/40 ,  G03F1/50 ,  G03F7/0035 ,  G03F7/2026

Abstract: A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.

Abstract translation: 一种用于选择性地改变辐射敏感聚合物层的厚度的方法，包括提供包括具有第一厚度形貌的至少一个辐射敏感聚合物层的基底; 使所述至少一个辐射敏感聚合物层通过具有预定辐射能透射率分布的掩模曝光，以选择性地将所述至少一个敏感聚合物层的预定区域暴露于预定的辐射能量剂量; 以及显影所述至少一个辐射敏感聚合物层以改变所述至少一个辐射敏感聚合物层的第一厚度形貌以产生第二厚度拓扑。

公开(公告)号：US20070028206A1

公开(公告)日：2007-02-01

申请号：US11193133

申请日：2005-07-29

Applicant: Shou-Yen Chou ,  Jaw-Jung Shin ,  Tsai-Sheng Gau ,  Burn Lin

Inventor： Shou-Yen Chou ,  Jaw-Jung Shin ,  Tsai-Sheng Gau ,  Burn Lin

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: Disclosed are a system and method for designing a mask layout. In one example, the method includes representing the mask layout using a plurality of pixels, each having a mask transmittance coefficient. A control parameter is initialized and a representative of the mask layout is generated. The method determines acceptance of the representative of the mask layout by a cost function and a Boltzmann factor, where the cost function is related to the mask layout and a target substrate pattern, and the Boltzmann factor is related to the cost function and the control parameter. The methods repeats the steps of generating the representative and determining acceptance until the mask layout is stabilized. The control parameter is decreased according to an annealing schedule. The generating, determining, repeating, and decreasing steps are reiterated until the mask layout is optimized.

公开(公告)号：US20070008508A1

公开(公告)日：2007-01-11

申请号：US11522611

申请日：2006-09-18

Applicant: Burn Lin ,  Tsai-Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Shinn Yu ,  Jen Shih

Inventor： Burn Lin ,  Tsai-Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Shinn Yu ,  Jen Shih

IPC: G03B27/42

CPC classification number: G03F7/70341 ,  G03F7/707 ,  G03F7/70808

Abstract: Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.

Abstract translation: 公开了用于浸没式光刻系统的各种密封环装置。 利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

公开(公告)号：US20060246357A1

公开(公告)日：2006-11-02

申请号：US11115433

申请日：2005-04-27

Applicant: Chia-Jen Chen ,  Hsin-Chang Lee ,  Sheng-Chi Chin ,  Hung Hsieh ,  Burn Lin

Inventor： Chia-Jen Chen ,  Hsin-Chang Lee ,  Sheng-Chi Chin ,  Hung Hsieh ,  Burn Lin

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F7/38

Abstract: The present disclosure provides a system and method for manufacturing a mask for semiconductor processing. In one example, the system includes at least one exposure unit configured to select a recipe for a later baking process in a post treatment unit, a buffer unit coupled to the exposure unit and configured to move the mask substrate from the exposure unit to the post treatment unit without exposing the mask substrate to the environment; and the post treatment unit coupled to the buffer unit and the exposure unit and configured to perform a baking process on the mask substrate using baking parameters associated with the recipe selected by the exposure unit.

Abstract translation: 本公开提供了一种用于制造用于半导体处理的掩模的系统和方法。 在一个示例中，系统包括至少一个曝光单元，其被配置为在后处理单元中选择用于稍后烘焙处理的配方，缓冲单元，其耦合到曝光单元并且被配置为将掩模基板从曝光单元移动到柱 处理单元，而不将掩模基板暴露于环境中; 以及所述后处理单元，其耦合到所述缓冲单元和所述曝光单元，并且被配置为使用与由所述曝光单元选择的所述配方相关联的烘焙参数对所述掩模基板进行烘烤处理。

公开(公告)号：US20060196960A1

公开(公告)日：2006-09-07

申请号：US11027412

申请日：2004-12-30

Applicant: Shing-Sheng Yu ,  Chih-Ming Ke ,  Burn Lin

Inventor： Shing-Sheng Yu ,  Chih-Ming Ke ,  Burn Lin

IPC: F24D1/00

CPC classification number: G05D23/24 ,  G05D23/1934

Abstract: A methodology for doing process control by using a heating apparatus comprising heating zones is revealed. First, a target CD (critical dimension) map is assigned. A baseline CD map corresponding to a substrate processed with the heating apparatus at a baseline setting is also obtained. An original CD map corresponding to a substrate processed at an original setting is obtained. For each heating zone, a perturbed CD map corresponding to a substrate processed at a perturbed setting is also obtained. The temperature distribution of the heating apparatus is adjusted according to the error CD map defined by the baseline CD map and the target CD map, basis functions defined by the original CD map and perturbed CD maps, and expansion coefficients expanding the error CD map with basis functions.

Abstract translation: 揭示了通过使用包括加热区域的加热装置进行过程控制的方法。 首先，分配目标CD（关键尺寸）图。 还获得了对应于在加热装置处理的基板在基线设置处的基线CD图。 获得与以原始设置处理的基板对应的原始CD图。 对于每个加热区域，也获得对应于在扰动设置处理的基板的扰动的CD图。 根据由基准CD映射和目标CD映射定义的误差CD映射，由原始CD映射和扰动CD映射定义的基函数以及扩展系数扩展错误CD映射的基础来调节加热设备的温度分布 功能。

公开(公告)号：US20050253090A1

公开(公告)日：2005-11-17

申请号：US10844178

申请日：2004-05-12

Applicant: Tsai Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Lin

Inventor： Tsai Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Lin

IPC: G03F7/20

CPC classification number: G03F7/70341

Abstract: An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

Abstract translation: 用于半导体制造的浸没式光刻系统提供了相对于晶片表面移动的透镜组件，并且包括联接到透镜组件并沿着透镜组件移动的喷嘴和排出组件。 喷嘴和排出组件可以围绕透镜周向地相对设置，或者可以设置围绕透镜的环形环，并且包括多个可选择的交替喷嘴和排水沟。 喷嘴和排出组件可旋转地围绕透镜。 将被图案化的晶片的至少一部分浸入由喷嘴组件提供的液体中，并且通过操纵喷嘴和排出组件来控制流动方向。 可以有利地向外指向流动方向以减少颗粒污染。

公开(公告)号：US20050286033A1

公开(公告)日：2005-12-29

申请号：US10874982

申请日：2004-06-23

Applicant: Burn Lin ,  Tsai-Sheng Gau ,  Chun-Kung Chen ,  Ru-Gun Liu ,  Shing Yu ,  Jen Shih

Inventor： Burn Lin ,  Tsai-Sheng Gau ,  Chun-Kung Chen ,  Ru-Gun Liu ,  Shing Yu ,  Jen Shih

IPC: G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70808 ,  G03F7/70341

Abstract: An immersion lithography system is disclosed to comprise a fluid containing feature for providing an immersion fluid for performing immersion lithography on a wafer, and a seal ring covering a predetermined portion of a wafer edge for preventing the immersion fluid from leaking through the covered portion of the wafer edge while the fluid is used for the immersion lithography.

Abstract translation: 公开了一种浸没式光刻系统，其包括用于提供用于在晶片上进行浸没式光刻的浸没流体的流体容纳特征，以及覆盖晶片边缘的预定部分的密封环，用于防止浸没流体泄漏通过 晶片边缘，同时流体用于浸没光刻。