公开(公告)号：US08367457B2

公开(公告)日：2013-02-05

申请号：US13205017

申请日：2011-08-08

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US07439597B2

公开(公告)日：2008-10-21

申请号：US11618247

申请日：2006-12-29

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L27/14

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US07205641B2

公开(公告)日：2007-04-17

申请号：US11017053

申请日：2004-12-21

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L31/075

CPC分类号： H01L31/03529 ,  H01L27/0255 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/02019 ,  H01L31/105 ,  Y02E10/50

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US20070081282A1

公开(公告)日：2007-04-12

申请号：US11308310

申请日：2006-03-16

申请人： Yan-Nan Li ,  Chyh-Yih Chang ,  Chun-Ming Wu ,  Chin-Huang Lai ,  Wen-Pin Chou

发明人： Yan-Nan Li ,  Chyh-Yih Chang ,  Chun-Ming Wu ,  Chin-Huang Lai ,  Wen-Pin Chou

IPC分类号： H02H9/00

CPC分类号： G11C17/18 ,  H01L27/0248

摘要： An electrostatic discharge (ESD) protection apparatus for programmable device is provided. This ESD protection device provides a high impedance along the electrical path from the pad to the power system for preventing the programmable device from damages induced by ESD event; and the impedance can be intentionally decreased during the normal reading and writing operations.

摘要翻译： 提供了一种用于可编程器件的静电放电（ESD）保护装置。 该ESD保护装置沿着从焊盘到电力系统的电路径提供高阻抗，以防止可编程装置由ESD事件引起的损害; 并且在正常的读取和写入操作期间可以有意地减小阻抗。

公开(公告)号：US20050110060A1

公开(公告)日：2005-05-26

申请号：US11017053

申请日：2004-12-21

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/062 ,  H01L31/105

CPC分类号： H01L31/03529 ,  H01L27/0255 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/02019 ,  H01L31/105 ,  Y02E10/50

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US06437407B1

公开(公告)日：2002-08-20

申请号：US09706807

申请日：2000-11-07

申请人： Ming-Dou Ker ,  Chyh-Yih Chang

发明人： Ming-Dou Ker ,  Chyh-Yih Chang

IPC分类号： H01L2362

CPC分类号： H01L27/0251

摘要： A charged-device model (CDM) electrostatic discharge (ESD) protection for complementary metal oxide semiconductor (CMOS) integrated circuits such as input/output (I/O) circuits. A CDM ESD clamp device is disposed on an output buffer or an input stage of the CMOS circuit in order to clamp the CDM ESD overstress voltage across the gate oxide during a CDM ESD event. When applied to I/O circuits, a bi-directional diode string with multiple diodes is used in conjunction with the CDM ESD clamp device. During the CDM ESD event, CDM charges (CDM Q) originally stored in the common substrate are discharged through the desired CDM ESD clamp device so as to protect all functional devices in the input, output or I/O circuits, and effectively improve the CDM ESD level in integrated circuit (IC) products.

摘要翻译： 用于互补金属氧化物半导体（CMOS）集成电路（例如输入/输出（I / O））电路的充电器件型号（CDM）静电放电（ESD）保护。 CDM ESD钳位器件设置在CMOS电路的输出缓冲器或输入级上，以便在CDM ESD事件期间钳位栅极氧化物上的CDM ESD过应力电压。 当应用于I / O电路时，具有多个二极管的双向二极管串与CDM ESD钳位装置结合使用。 在CDM ESD事件期间，原始存储在公共基板中的CDM充电（CDM Q）通过所需的CDM ESD钳位装置放电，以保护输入，输出或I / O电路中的所有功能器件，并有效改善CDM 集成电路（IC）产品中的ESD电平。

公开(公告)号：US20130320780A1

公开(公告)日：2013-12-05

申请号：US13874630

申请日：2013-05-01

申请人： Chih-Cheng Tai ,  Lucas John Myslinski ,  Chyh-Yih Chang ,  Shih Ming Tseng ,  Shih Hsiang Tseng

发明人： Chih-Cheng Tai ,  Lucas John Myslinski ,  Chyh-Yih Chang ,  Shih Ming Tseng ,  Shih Hsiang Tseng

IPC分类号： H02J4/00 ,  F03D9/00

CPC分类号： H02J3/386 ,  A45B2025/003 ,  F03D9/007 ,  F03D9/11 ,  F03D9/25 ,  F03D15/00 ,  F05B2260/404 ,  F21V33/008 ,  H02J3/383 ,  H02J4/00 ,  H02J7/025 ,  H02J7/35 ,  H02J50/10 ,  H02S10/12 ,  H05B37/0209 ,  Y02B10/30 ,  Y02B10/70 ,  Y02E10/725 ,  Y02E10/766

摘要： The power generation and transmission device and method is able to be used to harness power such as solar and/or wind power and then transmit the power to a device on the other side of a physical structure such as a house, a car, a umbrella, a tent, and an awning.

摘要翻译： 发电和发送装置和方法能够用于利用诸如太阳能和/或风力的电力，然后将电力传输到物理结构的另一侧的装置，例如房屋，汽车，伞 ，帐篷和遮阳篷。

公开(公告)号：US20110294253A1

公开(公告)日：2011-12-01

申请号：US13205017

申请日：2011-08-08

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US07915674B2

公开(公告)日：2011-03-29

申请号：US12133388

申请日：2008-06-05

申请人： Chyh-Yih Chang ,  Hsing-Hua Sun ,  Tsuan-Lun Lung ,  Chen-Ming Chiu

发明人： Chyh-Yih Chang ,  Hsing-Hua Sun ,  Tsuan-Lun Lung ,  Chen-Ming Chiu

IPC分类号： H01L29/66

CPC分类号： H01L29/7817 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095

摘要： An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.

摘要翻译： 示例性的横向扩散金属氧化物半导体器件包括第一类型衬底，设置在第一类型衬底上的栅极氧化膜，设置在栅极氧化物膜上的多晶硅栅极，形成在第一衬底中的第一第二类型轻掺杂区域， 形成在阱中并用作体的第一第一第一高掺杂区域，形成在体内并作为源的第一第二第二类型高掺杂区域，第二第二高度掺杂区域 掺杂区域形成在阱中并用作漏极，形成在体内的第二第一第一高掺杂区域和形成在体内并位于源极之下的第一第一掺杂区域。

公开(公告)号：US20070235808A1

公开(公告)日：2007-10-11

申请号：US11627088

申请日：2007-01-25

申请人： Chyh-Yih Chang ,  Ming-dou Ker

发明人： Chyh-Yih Chang ,  Ming-dou Ker

IPC分类号： H01L23/62

CPC分类号： H01L31/03529 ,  H01L27/0255 ,  H01L27/14609 ,  H01L27/14643 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/7391 ,  H01L29/861 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/723

摘要： An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure formed inside the well region, a second isolation structure formed inside the well region and spaced apart from the first isolation structure, a dielectric layer formed over the well region, and a layer of silicon, formed over the dielectric layer, including a p-type portion, an n-type portion and a center portion disposed between the p-type and n-type portions.

摘要翻译： 一种集成电路器件，包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区内部的第一隔离结构，形成在阱区内并与第一隔离结构隔开的第二隔离结构，介电层 形成在阱区上方，形成在电介质层上的硅层，包括p型部分，n型部分和设置在p型和n型部分之间的中心部分。