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    Field effect device having a channel of nanofabric and methods of making same
    12.
    发明授权
    Field effect device having a channel of nanofabric and methods of making same 有权
    具有纳米通道的场效应器件及其制造方法

    公开(公告)号：US08362525B2

    公开(公告)日：2013-01-29

    申请号：US11332529

    申请日：2006-01-13

    申请人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

    发明人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

    IPC分类号： H01L21/335 ,  H01L21/336 ,  H01L29/76

    CPC分类号： B82Y10/00 ,  H01L21/823807 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  H01L51/0541

    摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.

    摘要翻译： 具有纳米级通道的场效应器件及其制造方法。 使纳米管场效应晶体管具有衬底，以及相对于彼此间隔开的漏极区域和源极区域。 通道区域由纳米管的织物形成，其中沟道区的纳米管基本上都是相同的半导体类型的纳米管。 在通道区域附近形成至少一个栅极，使得栅极可用于调制沟道区域的导电性，使得可以在漏极和源极区域之间形成导电路径。 形成通道区域包括形成纳米管织物，其中织物具有半导体和金属纳米管，并且织物被处理以去除基本上所有的金属纳米管。

    Memory arrays using nanotube articles with reprogrammable resistance
    15.
    发明授权
    Memory arrays using nanotube articles with reprogrammable resistance 有权
    使用具有可编程电阻的纳米管制品的存储器阵列

    公开(公告)号：US07479654B2

    公开(公告)日：2009-01-20

    申请号：US11274967

    申请日：2005-11-15

    申请人： Claude L. Bertin ,  Frank Guo ,  Thomas Rueckes ,  Steven L. Konsek ,  Mitchell Meinhold ,  Max Strasburg ,  Ramesh Sivarajan ,  X. M. Henry Huang

    发明人： Claude L. Bertin ,  Frank Guo ,  Thomas Rueckes ,  Steven L. Konsek ,  Mitchell Meinhold ,  Max Strasburg ,  Ramesh Sivarajan ,  X. M. Henry Huang

    IPC分类号： H01L29/08 ,  H01L35/24

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/0002 ,  G11C2213/16 ,  G11C2213/19 ,  G11C2213/35 ,  G11C2213/79

    摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

    摘要翻译： 存储器阵列包括多个存储器单元，每个存储单元接收位线，第一字线和第二字线。 每个存储单元包括单元选择电路，其允许选择存储单元。 每个存储单元还包括两端开关器件，其包括与纳米管制品电连通的第一和第二导电端子。 存储器阵列还包括可操作地耦合到每个单元的位线，第一字线和第二字线的存储器操作电路。 电路可以通过激活适当的线路来选择细胞，并且可以将适当的电刺激施加到适当的线以可重新编程地改变纳米管制品在第一和第二端子之间的相对电阻。 相对电阻对应于存储单元的信息状态。