公开(公告)号：US09679624B2

公开(公告)日：2017-06-13

申请号：US14647600

申请日：2013-11-19

Applicant: CROCUS Technology SA

Inventor： Lucien Lombard ,  Ioan Lucian Prejbeanu

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption.

公开(公告)号：US20150123224A1

公开(公告)日：2015-05-07

申请号：US14405918

申请日：2013-06-07

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Clarisse Ducruet ,  Lucien Lombard

IPC: H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/02

Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.

Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。

公开(公告)号：US08885379B2

公开(公告)日：2014-11-11

申请号：US13764139

申请日：2013-02-11

Applicant: CROCUS Technology SA

Inventor： Jeremy Alvarez-Herault ,  Yann Conraux ,  Lucien Lombard

IPC: G11C15/02 ,  G11C15/04 ,  G11C11/16

CPC classification number: G11C15/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/046 ,  G11C2211/5615

Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.

Abstract translation: 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器（MRAM-based TCAM）单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线，串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线，使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。

公开(公告)号：US08797793B2

公开(公告)日：2014-08-05

申请号：US13761292

申请日：2013-02-07

Applicant: Crocus Technology SA

Inventor： Lucien Lombard ,  Kenneth MacKay ,  Ioan Lucian Prejbeanu

IPC: G11C11/15

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.

Abstract translation: 本公开涉及一种自参考MRAM元件，其包括具有磁阻的磁性隧道结，包括：当磁性隧道结处于低温阈值时具有沿着第一方向固定的存储磁化的存储层; 具有感测磁化的感测层; 以及包括在所述存储层和所述感测层之间的隧道势垒层; 以及对准装置，其布置成沿着基本上垂直于第一方向的第二方向提供具有磁各向异性的感测磁化，使得感测磁化围绕第二方向被调节; 对准装置还被布置成使得当提供第一读取磁场时，磁性隧道结的电阻变化范围为磁阻的至少约20％。 可以以增加的可靠性读取自引用的MRAM单元并且具有降低的功耗。

公开(公告)号：US20130201756A1

公开(公告)日：2013-08-08

申请号：US13761292

申请日：2013-02-07

Applicant: Crocus Technology SA

Inventor： Lucien Lombard ,  Kenneth MacKay ,  Ioan Lucian Prejbeanu

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.

Abstract translation: 本公开涉及一种自参考MRAM元件，其包括具有磁阻的磁性隧道结，包括：当磁性隧道结处于低温阈值时具有沿着第一方向固定的存储磁化的存储层; 具有感测磁化的感测层; 以及包括在所述存储层和所述感测层之间的隧道势垒层; 以及对准装置，其布置成沿着基本上垂直于第一方向的第二方向提供具有磁各向异性的感测磁化，使得感测磁化围绕第二方向被调节; 对准装置还被布置成使得当提供第一读取磁场时，磁性隧道结的电阻变化范围为磁阻的至少约20％。 可以以增加的可靠性读取自引用的MRAM单元并且具有降低的功耗。

公开(公告)号：US20130148419A1

公开(公告)日：2013-06-13

申请号：US13711820

申请日：2012-12-12

Applicant: Crocus Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Lucien Lombard ,  Quentin Stainer ,  Kenneth Mackay

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G01R33/093 ,  G01R33/098 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.

Abstract translation: 本公开涉及一种包括磁性隧道结的MRAM元件，包括：存储层，感测层和包括在存储层和感测层之间的隧道势垒层; 所述存储层包括具有第一存储磁化的第一磁性层; 具有第二存储磁化的第二磁性层; 以及分离所述第一和第二磁性层的非磁性耦合层，使得所述第一存储磁化基本上反平行于所述第二存储磁化; 第一和第二磁性层布置成使得在读取温度下，第一存储磁化基本上等于第二存储磁化; 并且在写入温度高于读取温度时，第二存储磁化强度大于第一存储磁化强度。 当磁性隧道结在低温下被冷却时，所公开的MRAM元件产生低杂散场。

公开(公告)号：US20130083593A1

公开(公告)日：2013-04-04

申请号：US13625923

申请日：2012-09-25

Applicant: Crocus Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Lucien Lombard

IPC: H01L29/82 ,  G11C11/16

CPC classification number: G11C11/16 ,  G11C11/00 ,  G11C11/1673 ,  G11C11/1675

Abstract: MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.

Abstract translation: MRAM单元包括磁隧道结，其包括存储层，所述存储层具有当磁性隧道结处于高温阈值并被固定在低温阈值时可净化的净存储磁化; 具有可逆感测磁化的感测层; 以及感测层和存储层之间的隧道势垒层; 所述存储和感测层中的至少一个包括铁氧体3d-4f非晶合金材料，其包含提供第一磁化的3d过渡金属原子的子晶格和提供第二磁化的4f稀土原子的子晶格，使得 在所述存储层和感测层中的至少一个的补偿温度下，第一磁化强度和第二磁化强度基本相等。 可以分别使用小的写入和读取字段来写入和读取所公开的MRAM单元。