SILICON-RICH ANTIREFLECTIVE COATING MATERIALS AND METHOD OF MAKING SAME
    18.
    发明申请
    SILICON-RICH ANTIREFLECTIVE COATING MATERIALS AND METHOD OF MAKING SAME 审中-公开
    有机硅的抗反射涂层材料及其制备方法

    公开(公告)号:US20140342167A1

    公开(公告)日:2014-11-20

    申请号:US14370540

    申请日:2013-01-17

    Abstract: An antireflective coating (ARC) formulation for use in photolithography is provided that comprises silicon-rich polysilanesiloxane resins dispersed in a solvent, as well as a substrate having a surface coated with the ARC formulation and a method of applying the ARC formulation to said surface to form an ARC layer. The polysilanesiloxane resins comprise a first component defined by structural units of (R′)2SiO2; a second component defined by structural units of (R″)SiO3 and a third component defined by structural units of (R′″)q+2Si2O4−q. In these polysilanesiloxane resins, the R′, R″, and R′″ are independently selected to be hydrocarbon or hydrogen (H) groups; and the subscript q is 1 or 2. Alternatively, the R′, R″, and R′″ are independently selected as methyl (Me) or hydrogen (H) groups. Typically, the first component is present in a molar ratio x, the second component is present in molar ratio y, and the third component is present in a molar ratio z, such that (x+y+z)=1, x

    Abstract translation: 提供了用于光刻的抗反射涂层(ARC)制剂,其包含分散在溶剂中的富含硅的聚硅烷硅氧烷树脂,以及具有涂覆有ARC制剂的表面的基材以及将ARC制剂施用于所述表面至 形成ARC层。 聚硅烷基硅氧烷树脂包括由(R')2 SiO 2的结构单元限定的第一组分; 由(R“)SiO 3的结构单元和由(R'”)q + 2Si 2 O 4-q的结构单元限定的第三组分限定的第二组分。 在这些聚硅烷基硅氧烷树脂中,R',R“和R”“独立选择为烃或氢(H)基团; 并且下标q为1或2.或者,R',R“和R”“独立地选自甲基(Me)或氢(H)基团。 通常,第一组分以摩尔比x存在,第二组分以摩尔比y存在,第三组分以摩尔比z存在,使得(x + y + z)= 1,x

Patent Agency Ranking