公开(公告)号：US20170104458A1

公开(公告)日：2017-04-13

申请号：US15286616

申请日：2016-10-06

Applicant: DSP Group LTD.

Inventor： Avi Cohen ,  Ron Pongratz

IPC: H03F1/30 ,  H03F3/24 ,  H03F3/193 ,  H03F1/02 ,  H03F3/345

CPC classification number: H03F1/301 ,  H03F1/0216 ,  H03F1/223 ,  H03F3/193 ,  H03F3/245 ,  H03F3/345 ,  H03F2200/451 ,  H03F2200/453

Abstract: A biasing device for direct current (DC) biasing a linear power amplifier that comprises multiple linear power amplifier circuits that are ideally identical to each other; wherein the biasing device may include a replica circuit that is a replica of a linear power amplifier circuit of the multiple linear power amplifier circuits; and a bias control circuit; wherein the bias control circuit is configured to feed the replica circuit with one or more DC biasing signals thereby maintaining at a constant value a replica DC current that is consumed by the replica circuit, and maintaining at a fixed value a replica DC voltage of a replica output node of the replica circuit; and wherein the replica circuit is coupled the multiple linear power amplifier circuits and is configured to supply DC voltage bias signals that force each linear power amplifier circuit of the multiple linear power amplifier circuits to consume a linear power amplifier circuit DC current that equals the replica DC current, when the linear power amplifier circuit is fed with a linear power amplifier DC voltage that either equals the replica DC voltage or differs from the replica DC voltage by a fraction of the replica DC voltage.

公开(公告)号：US20160149543A1

公开(公告)日：2016-05-26

申请号：US14952939

申请日：2015-11-26

Applicant: DSP Group LTD.

Inventor： Sergey Anderson ,  Alexander Mostov ,  Eli Schwartz ,  Ron Pongratz

IPC: H03F1/56 ,  H03F3/213 ,  H01L23/66 ,  H01L23/522 ,  H01L23/64 ,  H03F3/195 ,  H01F27/28

CPC classification number: H03F1/565 ,  H01F19/04 ,  H01F27/2804 ,  H01F27/29 ,  H01F38/00 ,  H01F38/14 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2924/0002 ,  H02M3/04 ,  H02M3/1563 ,  H02M2001/0012 ,  H03F1/0227 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F3/45179 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H04B1/44 ,  Y02D70/00 ,  H01L2924/00

Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

公开(公告)号：US09312820B2

公开(公告)日：2016-04-12

申请号：US14034175

申请日：2013-09-23

Applicant: DSP Group, LTD.

Inventor： Alexander Mostov ,  Yaron Hasson ,  Ron Pongratz ,  Sharon Betzalel

IPC: H04B1/44 ,  H04B1/00 ,  H04B1/38 ,  H03F1/56 ,  H01F38/14 ,  H03F3/213 ,  H03F3/195 ,  H02M3/04 ,  H01F27/28 ,  H01F27/29 ,  H01F38/00 ,  H03F3/19 ,  H03F3/21 ,  H03F3/68 ,  H03F3/193 ,  H01F19/04 ,  H03F1/02 ,  H03F3/45

CPC classification number: H03F1/565 ,  H01F19/04 ,  H01F27/2804 ,  H01F27/29 ,  H01F38/00 ,  H01F38/14 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2924/0002 ,  H02M3/04 ,  H02M3/1563 ,  H02M2001/0012 ,  H03F1/0227 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F3/45179 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H04B1/44 ,  Y02D70/00 ,  H01L2924/00

Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Abstract translation: 一种新颖有用的射频（RF）前端模块（FEM）电路，提供高线性度和功率效率，并满足现代无线通信标准（如802.11 WLAN，3G和4G蜂窝标准，蓝牙，ZigBee等）的要求。 有限元电路的配置允许使用常见的，相对低成本的半导体制造技术，例如标准CMOS工艺。 FEM电路包括由具有高功率电路和低功率电路的一个或多个子放大器组成的功率放大器，并且其输出被组合以产生总的期望功率增益。 具有以新颖配置布置的初级和次级绕组的集成多抽头变压器提供了由各个子放大器产生的功率的有效功率组合和传输到天线。