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48 条记录 (耗时 0.037 秒)

    Piezoresistive pressure sensor
    12.
    发明授权
    Piezoresistive pressure sensor 有权
    压阻传感器

    公开(公告)号：US08314444B2

    公开(公告)日：2012-11-20

    申请号：US13176351

    申请日：2011-07-05

    申请人： Shinya Yokoyama ,  Daigo Aoki ,  Yutaka Takashima

    发明人： Shinya Yokoyama ,  Daigo Aoki ,  Yutaka Takashima

    IPC分类号： H01L29/66

    CPC分类号： G01L9/0054 ,  G01L9/0055

    摘要： A piezoresistive pressure sensor is provided, which can prevent the occurrence of ESD breakdown due to the nearness of interconnection layers of a resistive element according to miniaturization thereof. The piezoresistive pressure sensor is so configured that respective semiconductor resistive layers on both sides of an arrangement are formed to be relatively longer than an adjacent semiconductor resistive layer, and thus a corner portion of a semiconductor connection layer that extends from the respective semiconductor resistive layers on both sides of the arrangement and a corner portion of the semiconductor interconnection layer that is nearest to the corner portion of the semiconductor connection layer, between which the ESD breakdown occurs easily, can be separated from each other.

    摘要翻译： 提供一种压阻式压力传感器，其可以防止由于电阻元件的互连层的接近程度而导致的ESD击穿的发生，因为其小型化。 压阻式压力传感器被配置成使得在布置的两侧上的相应的半导体电阻层形成为相对比相邻的半导体电阻层更长，并且因此从半导体电阻层延伸的半导体连接层的角部分 布置的两侧和半导体互连层的最接近半导体连接层的角部的角部可以彼此分离，ESD突发之间容易发生ESD损坏。

    SEMICONDUCTOR PRESSURE SENSOR
    13.
    发明申请
    SEMICONDUCTOR PRESSURE SENSOR 有权
    半导体压力传感器

    公开(公告)号：US20110214505A1

    公开(公告)日：2011-09-08

    申请号：US13109769

    申请日：2011-05-17

    申请人： Daigo Aoki ,  Hideyuki Hashimoto ,  Tetsuya Kobayashi ,  Kunio Koizumi ,  Yoshiaki Shimizu ,  Yutaka Takashima ,  Shinya Yokoyama

    发明人： Daigo Aoki ,  Hideyuki Hashimoto ,  Tetsuya Kobayashi ,  Kunio Koizumi ,  Yoshiaki Shimizu ,  Yutaka Takashima ,  Shinya Yokoyama

    IPC分类号： G01L9/06

    CPC分类号： G01L9/0054

    摘要： There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO2.

    摘要翻译： 提供了一种提高传感器灵敏度并且耐压特性和温度特性优异的半导体压力传感器。 在半导体压力传感器中，其中隔膜由设置在硅衬底的顶表面和底表面中的一个上的空腔形成，并且多个压电电阻器设置在隔膜边缘中，具有比平面形状大的面积的凹部 隔膜的整个边缘在平面图中从隔膜边缘向外定位在覆盖隔膜侧的硅基板的整个表面的保护膜中。 位于隔膜上的保护膜优选由SiO 2形成。

    Method of producing electroluminescent element
    15.
    发明申请
    Method of producing electroluminescent element 审中-公开

    公开(公告)号：US20070190885A1

    公开(公告)日：2007-08-16

    申请号：US11656311

    申请日：2007-01-19

    申请人： Daigo Aoki

    发明人： Daigo Aoki

    IPC分类号： H01J9/24 ,  H01J9/26

    CPC分类号： H01L51/56 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0015 ,  H05B33/10 ,  H05B33/14

    摘要： A method of producing an electroluminescent element. Preparing an electrode layer, and forming, on the electrode layer or an electric charge injection transportation layer formed on the electrode layer, a decomposition removal layer. Placing a photocatalyst treatment layer and the decomposition removal layer at an interval of 200 μm or less and conducting pattern irradiation to form the decomposition removal layer into a pattern. Removing the photocatalyst treatment layer from the decomposition removal, and forming an organic electroluminescent layer on the electrode layer or the decomposition removal layer according to the pattern of the decomposition removal layer.

    Manufacturing method of CPP type magnetic sensor having current-squeezing path
    16.
    发明授权
    Manufacturing method of CPP type magnetic sensor having current-squeezing path 失效
    具有电流挤压路径的CPP型磁传感器的制造方法

    公开(公告)号：US06929959B2

    公开(公告)日：2005-08-16

    申请号：US10828120

    申请日：2004-04-20

    申请人： Yoshihiro Nishiyama ,  Masamichi Saito ,  Daigo Aoki

    发明人： Yoshihiro Nishiyama ,  Masamichi Saito ,  Daigo Aoki

    IPC分类号： G11B5/39 ,  H01L43/08 ,  H01L43/12 ,  H01L21/00

    CPC分类号： G11B5/3912 ,  G11B5/3932 ,  Y10S438/945 ,  Y10S438/95

    摘要： On a multilayer film formed on a lower electrode layer, a resist layer having cutaway parts at a lower portion is formed, and on parts of the upper surface of the multilayer film which are not overlapped with the resist layer except for areas inside the cutaway parts, first gap layers are formed. Accordingly, a predetermined gap T1 can be formed between the first gap layers in the track width direction. Next, in the following step, two end surfaces of the multilayer film and the first gap layers in the track width direction are milled. Hence, according to the present invention, compared to the case in the past, the predetermined gap T1 provided between the first gap layers can be formed into a minute size with superior accuracy, the current path-squeezing structure can be easily formed, and a magnetic sensor having superior change in resistance (ΔR) and reproduction output can be manufactured.

    摘要翻译： 在形成在下电极层上的多层膜上，形成在下部具有切口部的抗蚀剂层，并且在多层膜的与上述抗蚀剂层重叠的上表面的除上述切除部之外的区域的部分 形成第一间隙层。 因此，可以在轨道宽度方向上的第一间隙层之间形成预定间隙T1。 接下来，在后续步骤中，研磨多层膜的两个端面和轨道宽度方向上的第一间隙层。 因此，根据本发明，与过去的情况相比，设置在第一间隙层之间的预定间隙T 1可以以高精度形成为微小尺寸，可以容易地形成电流路径挤压结构，以及 可以制造具有优异的电阻变化（DeltaR）和再现输出的磁传感器。

    Photoelectric sensor, information recording system, and information recording and reproducing method
    17.
    发明授权
    Photoelectric sensor, information recording system, and information recording and reproducing method 失效
    光电传感器，信息记录系统和信息记录和再现方法

    公开(公告)号：US5717626A

    公开(公告)日：1998-02-10

    申请号：US617220

    申请日：1996-03-18

    申请人： Daigo Aoki ,  Mitsuhiro Kashiwabara ,  Osamu Shimizu

    发明人： Daigo Aoki ,  Mitsuhiro Kashiwabara ,  Osamu Shimizu

    IPC分类号： G03G5/04 ,  G03G5/02 ,  G03G5/043 ,  G03G5/047 ,  G03G17/00 ,  G11B11/08 ,  H01L31/08 ,  H01L51/42 ,  H04N1/028 ,  G11C13/04

    CPC分类号： G03G5/02 ,  G03G5/043 ,  G03G5/047 ,  G11B11/08

    摘要： In a photoelectric sensor that enables information to be recorded on an information recording medium at an intensity amplified to a level higher than that of a current induced by information exposure and allows conductivity to remain maintained by a continued application of voltage even after termination of the information exposure, so that information can subsequently be recorded on the information recording medium, a photoconductive layer contains a substance that emits fluorescence in a wavelength region in which a charge generation substance-containing layer absorbs light, so that color images can be well recorded on the information recording medium. Also provided is an information recording system using such a photoelectric sensor.

    摘要翻译： 在光电传感器中，能够将信息记录在信号记录介质上，其强度被放大到高于由信息曝光引起的电流的电平，并允许即使在信息终止之后继续施加电压也可保持电导率 曝光，使得信息可以随后记录在信息记录介质上，光导层包含在电荷产生物质含有层吸收光的波长区域中发射荧光的物质，使得彩色图像可以良好地记录在 信息记录介质。 还提供了使用这种光电传感器的信息记录系统。

    Magnetic head device provided with lead electrode electrically connected to magnetic shield layer
    20.
    发明授权
    Magnetic head device provided with lead electrode electrically connected to magnetic shield layer 有权
    磁头装置设置有电连接到磁屏蔽层的引线电极

    公开(公告)号：US07656620B2

    公开(公告)日：2010-02-02

    申请号：US11567562

    申请日：2006-12-06

    申请人： Yoshihiro Nishiyama ,  Yasuo Hayakawa ,  Daigo Aoki

    发明人： Yoshihiro Nishiyama ,  Yasuo Hayakawa ,  Daigo Aoki

    IPC分类号： G11B5/11 ,  G11B5/39

    CPC分类号： G11B5/3912 ,  G11B5/3906 ,  G11B5/398

    摘要： A lower shield layer has a substantially flat shape, and an upper shield layer has a front portion and a rear portion, where the front portion is disposed closer to the lower shield layer than the rear portion. A lower conductive electrode and an upper conductive electrode are disposed between the lower shield layer and the upper shield layer. The lower conductive electrode is electrically connected to the lower shield layer, and the upper conductive electrode is electrically connected to the upper shield layer. Since the lower and upper conductive electrodes are disposed between the upper and lower shield layers, each of the lower shield layer and the upper shield layer may be formed to have a small area and a simple shape.

    摘要翻译： 下屏蔽层具有基本平坦的形状，并且上屏蔽层具有前部和后部，其中前部设置成比后部更靠近下屏蔽层。 下导电电极和上导电电极设置在下屏蔽层和上屏蔽层之间。 下导电电极电连接到下屏蔽层，并且上导电电极电连接到上屏蔽层。 由于下导电电极和上导电电极设置在上下屏蔽层之间，所以下屏蔽层和上屏蔽层可以形成为具有小面积和简单形状。