-
11.发明授权Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality 有权超低＆kgr 使用含有SiCOH基质官能团和有机致孔剂功能的单一双功能前体的等离子体增强化学气相沉积方法公开(公告)号：US08097932B2
公开(公告)日：2012-01-17
申请号：US12371180
申请日：2009-02-13
IPC分类号： H01L23/58
CPC分类号： C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/31695 , Y10T428/249921
摘要： A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.
摘要翻译： 提供了由具有内置有机致孔剂的单一有机硅前体制备包含Si，C，O和H原子的SiCOH电介质材料的方法。 具有内置有机致孔剂的单一有机硅前体选自具有分子式SiRR1R2R3的硅烷（SiH4）衍生物，具有分子式为R4R5R6-Si-O-Si-R7R8R9的二硅氧烷衍生物和分子式为R10R11R12- Si-O-Si-R13R14-O-Si-R15R16R17其中R和R1-17可以相同也可以不相同，并且可以选自H，烷基，烷氧基，环氧基，苯基，乙烯基，烯丙基，烯基或炔基， 直链，支链，环状，多环，并且可以被含氧，含氮或氟的取代基官能化。 除了该方法之外，本申请还提供了由本发明方法制备的SiCOH电介质以及含有该SiCOH的电子结构。
-
12.发明申请ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY 有权超低k等离子体增强化学气相沉积工艺使用单个双功能前体，包含SiCOH基质功能和有机多孔功能公开(公告)号：US20090146265A1
公开(公告)日：2009-06-11
申请号：US12371180
申请日：2009-02-13
IPC分类号： H01L23/58
CPC分类号： C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/31695 , Y10T428/249921
摘要： A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.
摘要翻译： 提供了由具有内置有机致孔剂的单一有机硅前体制备包含Si，C，O和H原子的SiCOH电介质材料的方法。 具有内置有机致孔剂的单一有机硅前体选自具有分子式SiRR1R2R3的硅烷（SiH4）衍生物，具有分子式为R4R5R6-Si-O-Si-R7R8R9的二硅氧烷衍生物和分子式为R10R11R12- Si-O-Si-R13R14-O-Si-R15R16R17其中R和R1-17可以相同也可以不相同，并且可以选自H，烷基，烷氧基，环氧基，苯基，乙烯基，烯丙基，烯基或炔基， 直链，支链，环状，多环，并且可以被含氧，含氮或氟的取代基官能化。 除了该方法之外，本申请还提供了由本发明方法制备的SiCOH电介质以及含有该SiCOH的电子结构。
-
公开(公告)号：US20080265381A1
公开(公告)日：2008-10-30
申请号：US12133043
申请日：2008-06-04
申请人： Ali Afzali-Ardakani , Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
发明人： Ali Afzali-Ardakani , Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound.
摘要翻译： 可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或 降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。 多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的。
-
14.发明授权公开(公告)号：US08618183B2
公开(公告)日：2013-12-31
申请号：US13602123
申请日：2012-09-01
IPC分类号： B05D3/06
CPC分类号： H01B19/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , Y10T428/249978 , Y10T428/249979 , H01L2924/00
摘要： A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
摘要翻译： 一种形成多孔复合材料的方法，其中提供了复合材料内的基本上所有孔直径为约5nm或更小并具有窄PSD的小孔。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值。
-
15.发明申请公开(公告)号：US20120328796A1
公开(公告)日：2012-12-27
申请号：US13602123
申请日：2012-09-01
CPC分类号： H01B19/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , Y10T428/249978 , Y10T428/249979 , H01L2924/00
摘要： A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less
摘要翻译： 一种形成多孔复合材料的方法，其中提供了复合材料内的基本上所有孔直径为约5nm或更小并具有窄PSD的小孔。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值
-
16.发明申请公开(公告)号：US20090297729A1
公开(公告)日：2009-12-03
申请号：US12538117
申请日：2009-08-08
CPC分类号： H01B19/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , Y10T428/249978 , Y10T428/249979 , H01L2924/00
摘要： The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
摘要翻译： 本发明提供一种多孔复合材料，其中复合材料中的基本上所有的孔都具有小直径约5nm或更小并具有窄PSD的孔。 本发明的复合材料的特征还在于现有技术的多孔复合材料中普遍存在的较大尺寸的孔的基本上不存在。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二固相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值 。
-
公开(公告)号：US08623761B2
公开(公告)日：2014-01-07
申请号：US13605763
申请日：2012-09-06
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
-
公开(公告)号：US09472450B2
公开(公告)日：2016-10-18
申请号：US13468693
申请日：2012-05-10
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
-
19.发明授权公开(公告)号：US08268411B2
公开(公告)日：2012-09-18
申请号：US12538117
申请日：2009-08-08
IPC分类号： B05D3/06
CPC分类号： H01B19/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , Y10T428/249978 , Y10T428/249979 , H01L2924/00
摘要： A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
摘要翻译： 一种形成多孔复合材料的方法，其中提供了复合材料内的基本上所有孔直径为约5nm或更小并具有窄PSD的小孔。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值。
-
20.发明授权公开(公告)号：US07674521B2
公开(公告)日：2010-03-09
申请号：US11190360
申请日：2005-07-27
IPC分类号： B32B3/26
CPC分类号： H01B19/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , Y10T428/249978 , Y10T428/249979 , H01L2924/00
摘要： The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
摘要翻译： 本发明提供一种多孔复合材料，其中复合材料中的基本上所有的孔都具有小直径约5nm或更小并具有窄PSD的孔。 本发明的复合材料的特征还在于现有技术的多孔复合材料中普遍存在的较大尺寸的孔的基本上不存在。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二固相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值 。
-
-
-
-
-
-
-
-
-
搜索结果
244 条记录 (耗时 0.043 秒)
