High productivity plasma processing chamber
    11.
    发明申请
    High productivity plasma processing chamber 审中-公开
    高效等离子体处理室

    公开(公告)号:US20050229849A1

    公开(公告)日:2005-10-20

    申请号:US11057041

    申请日:2005-02-11

    CPC classification number: C23C16/4404 C23C16/4586 H01J37/32522 H01J2237/022

    Abstract: Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.

    Abstract translation: 本发明的实施例一般涉及等离子体处理室的装置和方法,其需要较少的维护和停机时间,并且比现有技术具有更高的可靠性。 在一个实施例中,该设备包括搁置在陶瓷轴上的基板支撑件,允许在大气压下与基板支撑件电连接的内轴,支撑在陶瓷支撑结构上但不固定到陶瓷支撑结构的铝基板支撑件,模锻的蓝宝石支架 衬底支撑件内部的加热元件和布置在阿基米德螺旋中的衬底支撑件内的加热元件,以减少衬底支撑件的翘曲并增加其寿命。 方法包括通过减少从室表面产生颗粒来增加室内原位清洗之间的时间。 通过腔室部件的温度控制和腔室相对于处理区域的吹扫气体的非处理区域的加压而发生减少的颗粒产生。

    METHODS AND SYSTEMS FOR PERFORMING REAL-TIME WIRELESS TEMPERATURE MEASUREMENT FOR SEMICONDUCTOR SUBSTRATES
    12.
    发明申请
    METHODS AND SYSTEMS FOR PERFORMING REAL-TIME WIRELESS TEMPERATURE MEASUREMENT FOR SEMICONDUCTOR SUBSTRATES 有权
    用于半导体基板实时无线温度测量的方法和系统

    公开(公告)号:US20080097714A1

    公开(公告)日:2008-04-24

    申请号:US11689384

    申请日:2007-03-21

    CPC classification number: G01K1/024 G01K7/425

    Abstract: A monitor device includes a substrate and a plurality of temperature sensors disposed in the substrate. The monitor device also includes a processor coupled to the substrate and adapted to receive one or more signals from the plurality of temperature sensors. The processor is further adapted to convert the one or more received signals into one or more converted signals. The monitor device further includes a transceiver coupled to the substrate and adapted to receive the one or more converted signals. The transceiver is further adapted to transmit one or more output signals to an external receiver.

    Abstract translation: 监视器装置包括衬底和设置在衬底中的多个温度传感器。 监视器装置还包括耦合到衬底并适于从多个温度传感器接收一个或多个信号的处理器。 处理器还适于将一个或多个接收的信号转换成一个或多个转换的信号。 监视器装置还包括耦合到衬底并适于接收一个或多个转换信号的收发器。 收发器还适于将一个或多个输出信号发送到外部接收器。

    Integrated thermal unit having laterally adjacent bake and chill plates on different planes
    14.
    发明申请
    Integrated thermal unit having laterally adjacent bake and chill plates on different planes 有权
    集成热单元具有横向相邻的烘烤和冷却板在不同的平面上

    公开(公告)号:US20060237432A1

    公开(公告)日:2006-10-26

    申请号:US11174782

    申请日:2005-07-05

    CPC classification number: H01L21/67109 H01L21/67184 H01L21/67742

    Abstract: An integrated thermal unit comprising a bake plate having a substrate holding surface configured to hold and heat a substrate in a baking position and a chill plate having a substrate holding surface configured to hold and cool a substrate in a cooling position where the substrate holding surface of the bake plate is positioned in a first substantially horizontal plane when the bake plate is in the baking position and the substrate holding surface of the chill plate is positioned in a second substantially horizontal plane that is below the first plane when the chill plate is in a cooling position.

    Abstract translation: 一种集成热单元,包括具有被配置为在烘烤位置保持和加热基板的基板保持表面的烘烤板,以及具有基板保持表面的冷却板,所述冷却板被配置为在基板保持表面的基板保持表面的冷却位置保持和冷却基板 当烘烤板处于烘烤位置时,烘烤板定位在第一基本上水平的平面中,并且当冷却板处于烘烤位置时,冷却板的基板保持表面定位在第二基本水平的平面内,该第二基本水平的平面位于第一平面的下方 冷却位置。

    INTEGRATED THERMAL UNIT HAVING A SHUTTLE WITH A TEMPERATURE CONTROLLED SURFACE
    16.
    发明申请
    INTEGRATED THERMAL UNIT HAVING A SHUTTLE WITH A TEMPERATURE CONTROLLED SURFACE 有权
    具有温度控制表面的集成热电偶单元

    公开(公告)号:US20080023656A1

    公开(公告)日:2008-01-31

    申请号:US11868453

    申请日:2007-10-05

    CPC classification number: H01L21/67109 G03F7/7075 H01L21/67748

    Abstract: An integrated thermal unit comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate transfer shuttle configured to transfer substrates from the bake plate to the cool plate, wherein the substrate transfer shuttle has a temperature controlled substrate holding surface that is capable of cooling a substrate heated by the bake plate.

    Abstract translation: 一种集成热单元,包括:烘烤板,被配置为加热支撑在所述烘烤板的表面上的基底; 冷却板,被配置为冷却支撑在所述冷却板的表面上的基板; 以及衬底传送梭,其构造成将衬底从烘烤板转移到冷却板,其中衬底传送梭具有能够冷却由烘烤板加热的衬底的温度控制的衬底保持表面。

    Integrated thermal unit having a shuttle with two-axis movement
    18.
    发明申请
    Integrated thermal unit having a shuttle with two-axis movement 有权
    具有双轴运动的梭子的集成热单元

    公开(公告)号:US20060237431A1

    公开(公告)日:2006-10-26

    申请号:US11174781

    申请日:2005-07-05

    Abstract: An integrated thermal unit comprises a bake station comprising a bake plate configured to hold and heat a substrate; a chill station comprising a chill plate configured to hold and cool a substrate; and a substrate transfer shuttle configured to transfer substrates from the bake plate to the chill plate along a horizontally linear path within the thermal unit and raise and lower substrates along a vertical path within the integrated thermal unit.

    Abstract translation: 集成热单元包括烘焙站,烘烤站包括构造成保持和加热基材的烘烤板; 冷却站,包括构造成保持和冷却衬底的冷却板; 以及基板传送梭,其构造成沿着所述热单元内的水平线性路径将基板从所述烘烤板传送到所述冷却板,并且沿着所述集成热单元内的垂直路径升高和降低基板。

Patent Agency Ranking