公开(公告)号：US20060124945A1

公开(公告)日：2006-06-15

申请号：US10529625

申请日：2003-09-23

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L33/00 ,  H01L21/78

CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

公开(公告)号：US06891199B2

公开(公告)日：2005-05-10

申请号：US10343851

申请日：2001-07-24

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Ulrich Jacob ,  Werner Plass ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Ulrich Jacob ,  Werner Plass ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

IPC分类号： H01L33/20 ,  H01L33/24 ,  H01L29/16

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.

摘要翻译： 用于高性能发光二极管的半导体芯片（1）的纵向边比其横向侧面大得多。 以这种方式可以显着改善光提取。

公开(公告)号：US07943944B2

公开(公告)日：2011-05-17

申请号：US10523551

申请日：2003-06-20

申请人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L29/22 ,  H01L29/24

CPC分类号： H01L33/20 ,  H01L33/32

摘要： A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

摘要翻译： 一种具有基于GaN的多层结构（12）的辐射发射薄膜半导体部件，其包含有源辐射产生层（14）并具有第一主区域（16）和第二主区域（18） 远离第一主区域 - 用于耦合在有源辐射产生层中产生的辐射。 此外，多层结构（12）的第一主区域（16）耦合到反射层或界面，并且邻接多层结构的第二主区域（18）的多层结构的区域（22）被图案化 一维或二维。

公开(公告)号：US07655488B2

公开(公告)日：2010-02-02

申请号：US12290097

申请日：2008-10-27

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

摘要翻译： 用于制造发射电磁辐射的半导体芯片的方法，其中为了提高发射电磁辐射的半导体芯片的光输出，纹理反射表面被集成在半导体芯片的p侧上。 半导体芯片具有基于GaN的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域。 面向辐射产生区域的p导电半导体层的表面设置有三维金字塔状结构。 镜面层布置在整个这个有纹理的表面上。 在镜面层和导电性半导体层之间形成纹理反射面。

公开(公告)号：US20070034888A1

公开(公告)日：2007-02-15

申请号：US11585632

申请日：2006-10-24

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

摘要翻译： 提出了发射电磁辐射的半导体芯片。 芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。 芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中 相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

公开(公告)号：US08604497B2

公开(公告)日：2013-12-10

申请号：US10572655

申请日：2003-09-26

申请人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/46

摘要： A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).

摘要翻译： 一种具有外延多层结构（12）的辐射发射薄膜半导体芯片，其包含有源辐射产生层（14）并具有第一主面（16）和第二主面（18） 第一主面 - 用于耦合在有源辐射产生层中产生的辐射。 此外，多层结构（12）的第一主面（16）耦合到反射层或界面，并且邻接多层结构的第二主面（18）的多层结构的区域（22）被图案化 一个或二维地具有凸起高度（26）。

公开(公告)号：US20120211787A1

公开(公告)日：2012-08-23

申请号：US13398425

申请日：2012-02-16

申请人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US08129209B2

公开(公告)日：2012-03-06

申请号：US12648566

申请日：2009-12-29

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L21/20

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US07691656B2

公开(公告)日：2010-04-06

申请号：US10417611

申请日：2003-04-17

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L21/20

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底主体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN层，GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US07242025B2

公开(公告)日：2007-07-10

申请号：US10356109

申请日：2003-01-31

申请人： Dominik Eisert ,  Stephan Kaiser ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle

发明人： Dominik Eisert ,  Stephan Kaiser ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L23/48 ,  H01L51/10 ,  H01S5/183

CPC分类号： H01L33/387 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.

摘要翻译： 辐射发射半导体部件具有包含氮化物化合物半导体的半导体主体和设置在半导体本体的表面上的接触金属化层。 在这种情况下，接触金属化层被辐射透射的导电接触层覆盖。 产生的辐射通过接触金属化层或通过接触金属化层中的开口耦合出来。