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    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS
    11.
    发明申请
    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS 有权
    背光照明成像传感器中的侧光

    公开(公告)号：US20130207212A1

    公开(公告)日：2013-08-15

    申请号：US13370085

    申请日：2012-02-09

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

    摘要翻译： 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外侧的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

    Laser anneal for image sensors
    13.
    发明授权
    Laser anneal for image sensors 有权
    激光退火用于图像传感器

    公开(公告)号：US08318529B1

    公开(公告)日：2012-11-27

    申请号：US13566638

    申请日：2012-08-03

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14698 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    摘要： A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.

    摘要翻译： 一种用于制造包括像素电路区域和外围电路区域的图像传感器的技术包括在图像传感器的正面上制造前侧部件。 掺杂剂层植入图像传感器的背面。 在背面形成防反射层，并且在像素电路区域下方覆盖掺杂剂层的第一部分，同时在外围电路区域下方暴露掺杂剂层的第二部分。 掺杂剂层的第一部分通过抗反射层从图像传感器的背面激光退火。 抗反射层在激光退火期间增加掺杂剂层的第一部分的温度。

    High full-well capacity pixel with graded photodetector implant
    14.
    发明授权
    High full-well capacity pixel with graded photodetector implant 有权
    具有渐变光电探测器植入物的高全阱容量像素

    公开(公告)号：US08293629B2

    公开(公告)日：2012-10-23

    申请号：US12755088

    申请日：2010-04-06

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L21/425

    CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    IMAGE SENSOR HAVING DARK SIDEWALLS BETWEEN COLOR FILTERS TO REDUCE OPTICAL CROSSTALK
    15.
    发明申请
    IMAGE SENSOR HAVING DARK SIDEWALLS BETWEEN COLOR FILTERS TO REDUCE OPTICAL CROSSTALK 审中-公开
    图像传感器在彩色滤光片之间具有减少光学波纹管的暗面

    公开(公告)号：US20120019695A1

    公开(公告)日：2012-01-26

    申请号：US12843578

    申请日：2010-07-26

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H04N5/335

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685

    摘要： An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on a light incident side of the substrate layer, and an array of microlenses disposed over the CFA. Each microlens is aligned to direct light incident on the light incident side of the image sensor through a corresponding CFA element to a corresponding photosensitive element. The dark sidewall films are disposed on sides of the CFA elements and separate adjacent ones of the CFA elements having different colors.

    摘要翻译： 一种用于制造包括设置在相邻滤色器之间的暗侧壁膜的图像传感器的装置和技术。 图像传感器还包括设置在基底层中的感光元件的阵列，包括设置在基底层的光入射侧的具有至少两种不同颜色的CFA元件的滤色器阵列（“CFA”）和微透镜阵列 处理终审法院。 每个微透镜对准以将入射到图像传感器的光入射侧的光通过相应的CFA元件引导到相应的感光元件。 黑色侧壁膜设置在CFA元件的侧面上，并且分离具有不同颜色的相邻的CFA元件。

    Wafer dicing using scribe line etch
    16.
    发明授权
    Wafer dicing using scribe line etch 有权
    使用划线蚀刻的晶片切割

    公开(公告)号：US08071429B1

    公开(公告)日：2011-12-06

    申请号：US12954151

    申请日：2010-11-24

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

    IPC分类号： H01L21/304

    CPC分类号： H01L21/78 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

    摘要： Embodiments of a method for separating dies from a wafer having first and second sides. The process embodiment includes masking the first side of the wafer, the mask including openings therein to expose parts of the first side substantially aligned with scribe lines of the wafer. The process embodiment also includes etching from the exposed parts of the first side of the wafer until an intermediate position between the first and second sides and sawing the remainder of the wafer, starting from the intermediate position until reaching the second surface.

    摘要翻译： 用于从具有第一和第二侧的晶片分离模具的方法的实施例。 该工艺实施例包括掩蔽晶片的第一侧，掩模包括其中的开口，以暴露基本上与晶片划线对齐的第一侧的部分。 工艺实施例还包括从晶片的第一侧的暴露部分进行蚀刻，直到第一和第二面之间的中间位置，并从中间位置开始到达第二表面，锯切晶片的其余部分。

    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT
    17.
    发明申请
    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT 有权
    具有分级光电转换器的高全能容量像素

    公开(公告)号：US20110241090A1

    公开(公告)日：2011-10-06

    申请号：US12755088

    申请日：2010-04-06

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L31/112 ,  H01L21/66

    CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    CMOS image sensor with high full-well-capacity
    18.
    发明授权
    CMOS image sensor with high full-well-capacity 有权
    具有高全容量容量的CMOS图像传感器

    公开(公告)号：US07888215B2

    公开(公告)日：2011-02-15

    申请号：US12133217

    申请日：2008-06-04

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L21/336

    CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  Y02E10/50

    摘要： An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.

    摘要翻译： 具有高全阱容量的图像传感器包括光敏区域，转移栅极和侧壁间隔物。 光敏区域形成为响应于光积累图像电荷。 所述传输栅极邻近所述光敏区域设置并耦合以选择性地将所述图像电荷从所述感光区域传送到其它像素电路。 第一和第二侧壁间隔件设置在传送门的两侧。 最靠近感光区域的第一侧壁隔离物比第二侧壁间隔物窄。 在一些情况下，可以省略第一侧壁间隔物。