公开(公告)号：US20250169139A1

公开(公告)日：2025-05-22

申请号：US18945658

申请日：2024-11-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  Jeong Woo PARK ,  Minkyun SOHN ,  Seong Hyun LEE ,  Wangjoo LEE ,  Jinha KIM ,  Min-A PARK ,  Sun Kyu JUNG ,  Subin HEO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: Provided is a transistor device including: a substrate; a lower transistor positioned on the substrate and including a lower channel layer, a lower gate, and a lower source/drain region; an upper transistor positioned on the lower transistor and including an upper channel layer, an upper gate, and an upper source/drain region; and an inner spacer configured to insulate the lower transistor from the upper transistor, wherein the inner spacer may be formed by removing a portion of each of a first sacrificial layer and a second sacrificial layer, which are formed above and below the lower channel layer and the upper channel layer and have different Ge contents, to a depth according to a Ge content and then depositing an insulating material.

公开(公告)号：US20170294762A1

公开(公告)日：2017-10-12

申请号：US15230313

申请日：2016-08-05

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM

IPC: H01S5/32 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01S5/3223 ,  H01S5/021 ,  H01S5/041 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/187 ,  H01S5/3086 ,  H01S5/3224 ,  H01S5/4006

Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.

公开(公告)号：US20170261705A1

公开(公告)日：2017-09-14

申请号：US15607717

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  Myung Joon KWACK

IPC: G02B6/42 ,  H01L27/15 ,  H01L31/167 ,  H01L21/762 ,  G02B6/13 ,  G02B6/12

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US20160260805A1

公开(公告)日：2016-09-08

申请号：US15056660

申请日：2016-02-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sang Hoon KIM ,  Gyungock KIM ,  In Gyoo KIM

IPC: H01L29/161 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/06 ,  H01L21/311

CPC classification number: H01L29/161 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

Abstract: Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the bulk silicon substrate and has a first region exposing a portion of the bulk silicon substrate, a silicon layer which covers a portion of the top surface of the oxide film and does not cover the first region, a germanium layer which contacts the bulk silicon substrate exposed through the first region and is disposed on the oxide film, and an insulating layer which covers the oxide film and the silicon layer and exposes the top surface of the germanium layer.

Abstract translation: 提供绝缘体上的锗基板。 绝缘体上的衬底包括体硅衬底，氧化膜，其设置在体硅衬底上并且具有暴露本体硅衬底的一部分的第一区域;覆盖顶部表面的一部分的硅层; 氧化膜并且不覆盖第一区域，接触通过第一区域暴露的体硅衬底并设置在氧化物膜上的锗层，以及覆盖氧化物膜和硅层并暴露顶部的绝缘层 锗层的表面。

公开(公告)号：US20160202504A1

公开(公告)日：2016-07-14

申请号：US14848077

申请日：2015-09-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0155 ,  G02F2001/0157

Abstract: Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof

Abstract translation: 提供了一种光学调制器，其包括光波导和光调制部分，其集成在光波导上，其被包覆在氧化物硅中并且通过使用体硅晶片代替绝缘体上硅（SOI）而具有硅作为核， 典型的光波导和光学调制器，并使用互补金属氧化物半导体（CMOS）和热氧化膜形成工艺及其制造方法

公开(公告)号：US20140346532A1

公开(公告)日：2014-11-27

申请号：US14062454

申请日：2013-10-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  Myung Joon KWACK

IPC: H01L31/167 ,  G02B6/42

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Abstract translation: 公开了一种光输入/输出装置和包括其的光电系统。 该器件包括体硅衬底，整体地集成在体硅衬底的一部分上的至少一个垂直输入光检测元件以及整体集成在体硅衬底的另一部分上的至少一个垂直输出光源元件， 垂直输入光检测元件。 垂直输出光源元件包括通过晶片接合方法与体硅衬底组合的III-V化合物半导体光源有源层。