公开(公告)号：US09685304B2

公开(公告)日：2017-06-20

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  C01B35/00 ,  C01B35/06 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：US20160020102A1

公开(公告)日：2016-01-21

申请号：US14378963

申请日：2013-02-13

Applicant: Entegris, Inc

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01L21/265 ,  H01L33/00 ,  H01J37/317 ,  H01L31/18

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Abstract translation: 描述了离子注入工艺和系统，其中使用碳掺杂剂源材料来实现碳掺杂。 描述了各种气体混合物，包括碳掺杂剂源材料，以及用于这种碳掺杂的气体的共流组合。 描述了在碳掺杂剂源材料中提供原位清洁剂，以及碳掺杂剂源气体，氢化物气体，氟化物气体，惰性气体，氧化物气体和其它气体的特定组合。

公开(公告)号：US20170330726A1

公开(公告)日：2017-11-16

申请号：US15593486

申请日：2017-05-12

Applicant: Entegris, Inc.

Inventor： Barry Lewis Chambers ,  Biing-Tsair Tien ,  Joseph D. Sweeney ,  Ying Tang ,  Oleg Byl ,  Steven E. Bishop ,  Sharad N. Yedave

IPC: H01J37/317 ,  C09D5/24 ,  C09D1/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C09D1/00 ,  C09D5/24 ,  H01J37/026 ,  H01J37/3244 ,  H01J2237/006 ,  H01J2237/022 ,  H01L21/265 ,  H01L21/67213

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x≧1, y≧1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH4 and other hydrocarbons of CxHy (x≧1, y≧1) general formula and GeH4.

公开(公告)号：US20150357152A1

公开(公告)日：2015-12-10

申请号：US14827783

申请日：2015-08-17

Applicant: Entegris, Inc.

Inventor： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性质，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流动通道沉积物检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US20150247605A1

公开(公告)日：2015-09-03

申请号：US14430105

申请日：2013-09-20

Applicant: Entegris, Inc.

Inventor： Joseph R. Despres ,  Joseph D. Sweeney ,  Edward E. Jones ,  Matthew B. Donatucci ,  Chiranjeevi Pydi ,  Edward A. Sturm ,  Barry Lewis Chambers ,  Gregory Scott Baumgart

IPC: F17C13/12 ,  F17C13/04

CPC classification number: F17C13/12 ,  F17C13/04 ,  F17C2201/0104 ,  F17C2205/0326 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0344 ,  F17C2205/035 ,  F17C2205/0382 ,  F17C2205/0391 ,  F17C2221/012 ,  F17C2221/013 ,  F17C2221/015 ,  F17C2221/016 ,  F17C2227/045 ,  F17C2250/0626 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/7795

Abstract: A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing.

Abstract translation: 一种流体供应包，其包括压力调节的流体存储和分配容器，适于从容器分配流体的阀头，以及适于在开始流体分配时防止流体流动中的压力尖峰的抗压尖钉组件。

公开(公告)号：US20170250084A1

公开(公告)日：2017-08-31

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01J37/244 ,  H01L31/18 ,  H01J37/317

CPC classification number: H01L21/2658 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/006 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US20160013018A1

公开(公告)日：2016-01-14

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US09142387B2

公开(公告)日：2015-09-22

申请号：US14095575

申请日：2013-12-03

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: C23C16/00 ,  H01J37/317 ,  C01B35/00 ,  C01B35/06

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。