公开(公告)号：US10557107B2

公开(公告)日：2020-02-11

申请号：US15971535

申请日：2018-05-04

Applicant: Entegris, Inc.

Inventor： Laisheng Sun ,  Peng Zhang ,  Jun Liu ,  Steven Medd ,  Jeffrey A. Barnes ,  Shrane Ning Jenq

IPC: C11D7/32 ,  C11D11/00 ,  C11D1/62 ,  C23G1/20 ,  H01L21/02 ,  C11D3/00 ,  C11D3/30

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US10351809B2

公开(公告)日：2019-07-16

申请号：US15540293

申请日：2016-01-05

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Donald Frye ,  Jun Liu ,  Michael White ,  Danela White ,  Chao-Yu Wang

IPC: C11D3/30 ,  C11D11/00 ,  H01L21/02 ,  B08B3/08 ,  C11D3/20 ,  C11D3/26 ,  C11D3/34 ,  C11D7/32 ,  C11D1/62 ,  H01L21/321 ,  H01L21/768

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US10176979B2

公开(公告)日：2019-01-08

申请号：US14378842

申请日：2013-02-15

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Laisheng Sun ,  Elizabeth Thomas ,  Jason Chang

IPC: H01L21/02 ,  C11D1/72 ,  C11D3/20 ,  C11D1/66 ,  C11D1/22 ,  C11D1/38 ,  B08B3/08 ,  C11D11/00 ,  C11D3/39 ,  C11D7/06 ,  C11D3/04 ,  C11D3/34

Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US11149235B2

公开(公告)日：2021-10-19

申请号：US16515935

申请日：2019-07-18

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Elizabeth Thomas ,  Jun Liu ,  Michael White ,  Chao-Yu Wang ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02 ,  C11D7/34

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.