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    Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti-Ferromagnetic Structure
    17.
    发明申请
    Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti-Ferromagnetic Structure 审中-公开
    具有未固定，固定的合成反铁磁结构的磁阻MTJ堆叠

    公开(公告)号：US20160315252A1

    公开(公告)日：2016-10-27

    申请号：US15199862

    申请日：2016-06-30

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

    Abstract translation: 磁阻磁隧道结（MTJ）堆叠包括位于自由磁区和固定磁区之间的自由磁区，固定磁区和电介质层。 在一个方面，固定磁性区域基本上由未固定的固定的合成反铁磁（SAF）结构组成，其包括（i）包括钴的一种或多种铁磁材料的第一层，（ii）多层区域，包括 多个铁磁材料层，其中所述多个铁磁材料层包括一个或多个包含钴的铁磁材料的层，以及（iii）设置在所述第一层和所述多层区域之间的反铁磁性耦合层。 自由磁区可以包括圆形，第一层的一个或多个铁磁材料可以包括钴，铁和硼，并且电介质层可以设置在第一层上。

    Magnetoresistive memory element and method of fabricating same
    18.
    发明授权
    Magnetoresistive memory element and method of fabricating same 有权
    磁阻存储元件及其制造方法

    公开(公告)号：US09419208B2

    公开(公告)日：2016-08-16

    申请号：US15046483

    申请日：2016-02-18

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    Abstract translation: 磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。 第一电介质的第一表面与自由磁性层的第一表面接触。 磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。 电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料 电极和导体。

    MRAM HAVING AN UNPINNED, FIXED SYNTHETIC ANTI-FERROMAGNETIC STRUCTURE
    20.
    发明申请
    MRAM HAVING AN UNPINNED, FIXED SYNTHETIC ANTI-FERROMAGNETIC STRUCTURE 审中-公开
    MRAM具有独特的，固定的合成抗菌结构

    公开(公告)号：US20150280110A1

    公开(公告)日：2015-10-01

    申请号：US14727910

    申请日：2015-06-02

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit includes a free magnetic region, a fixed magnetic region comprising an anti-ferromagnetic material, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt, (ii) a second layer of one or more ferromagnetic materials wherein the one or more ferromagnetic materials includes cobalt, (iii) a third layer of one or more ferromagnetic materials, and an anti-ferromagnetic coupling layer, wherein: (a) the anti-ferromagnetic coupling layer is disposed between the first and third layers, and (b) the second layer is disposed between the first layer and the anti-ferromagnetic coupling layer.

    Abstract translation: MRAM位包括自由磁区，包括反铁磁材料的固定磁区和位于自由磁区与固定磁区之间的电介质层。 在一个方面，固定磁区基本上由未固定的固定合成反铁磁（SAF）结构组成，其包括（i）一个或多个铁磁材料的第一层，其中一个或多个铁磁材料包括钴，（ii ）一种或多种铁磁材料的第二层，其中所述一种或多种铁磁材料包括钴，（iii）一种或多种铁磁材料的第三层和反铁磁性耦合层，其中：（a）所述反铁磁性材料 耦合层设置在第一和第三层之间，（b）第二层设置在第一层和反铁磁性耦合层之间。

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