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23 条记录 (耗时 0.026 秒)

    Method of managing sound source and apparatus therefor
    12.
    发明申请
    Method of managing sound source and apparatus therefor 有权
    管理声源及其设备的方法

    公开(公告)号：US20060122841A1

    公开(公告)日：2006-06-08

    申请号：US11270476

    申请日：2005-11-10

    申请人： Jung-eun Shin ,  Eun-ha Lee

    发明人： Jung-eun Shin ,  Eun-ha Lee

    IPC分类号： G10L21/00 ,  H04N9/475

    CPC分类号： G10H1/361 ,  G10H1/0008 ,  G10H1/22 ,  G10H1/46 ,  G10H2210/056 ,  G10H2220/106

    摘要： A method of managing a sound source in a digital AV device and an apparatus thereof are provided. The method of managing a sound source in a digital AV device includes: extracting at least one sound source from sound being reproduced through the digital AV device; mapping an image to the extracted sound source; and managing the sound sources by using the mapped image. In addition, preferably, the extracted sound source is registered, changed, deleted, selectively reproduced, or selectively deleted by using the image. Accordingly, sound being output can be visually managed by handling the sound sources separately, a desired sound source can be selectively reproduced or removed such that utilization of the digital AV device can be enhanced.

    摘要翻译： 提供一种管理数字AV设备中的声源的方法及其装置。 在数字AV设备中管理声源的方法包括：从通过数字AV设备再现的声音提取至少一个声源; 将图像映射到提取的声源; 并通过使用映射图像管理声源。 此外，优选地，通过使用图像来注册，改变，删除，选择性地再现或选择性地删除所提取的声源。 因此，可以通过单独处理声源来视觉地管理输出的声音，可以选择性地再现或去除期望的声源，从而可以增强数字AV设备的利用。

    Method of managing sound source and apparatus therefor
    13.
    发明授权
    Method of managing sound source and apparatus therefor 有权
    管理声源及其设备的方法

    公开(公告)号：US08300851B2

    公开(公告)日：2012-10-30

    申请号：US11270476

    申请日：2005-11-10

    申请人： Jung-eun Shin ,  Eun-ha Lee

    发明人： Jung-eun Shin ,  Eun-ha Lee

    IPC分类号： H04B1/00

    CPC分类号： G10H1/361 ,  G10H1/0008 ,  G10H1/22 ,  G10H1/46 ,  G10H2210/056 ,  G10H2220/106

    摘要： A method of managing a sound source in a digital AV device and an apparatus thereof are provided. The method of managing a sound source in a digital AV device includes: extracting at least one sound source from sound being reproduced through the digital AV device; mapping an image to the extracted sound source; and managing the sound sources by using the mapped image. In addition, preferably, the extracted sound source is registered, changed, deleted, selectively reproduced, or selectively deleted by using the image. Accordingly, sound being output can be visually managed by handling the sound sources separately, a desired sound source can be selectively reproduced or removed such that utilization of the digital AV device can be enhanced.

    摘要翻译： 提供一种管理数字AV设备中的声源的方法及其装置。 在数字AV设备中管理声源的方法包括：从通过数字AV设备再现的声音提取至少一个声源; 将图像映射到提取的声源; 并通过使用映射图像管理声源。 此外，优选地，通过使用图像来注册，改变，删除，选择性地再现或选择性地删除所提取的声源。 因此，可以通过单独处理声源来视觉地管理输出的声音，可以选择性地再现或去除期望的声源，从而可以提高数字AV设备的利用。

    Method for foaming MOS transistor having bi-layered spacer
    15.
    发明授权
    Method for foaming MOS transistor having bi-layered spacer 有权
    用于发泡具有双层间隔物的MOS晶体管的方法

    公开(公告)号：US06245620B1

    公开(公告)日：2001-06-12

    申请号：US09327459

    申请日：1999-06-08

    申请人： Keung-hee Jang ,  Eun-ha Lee

    发明人： Keung-hee Jang ,  Eun-ha Lee

    IPC分类号： H01L21331

    CPC分类号： H01L21/76897 ,  H01L21/28052 ,  H01L21/28079 ,  H01L21/28247 ,  H01L29/6659

    摘要： A method is provided for forming a MOS transistor in a highly integrated semiconductor device. In this method a gate pattern is initially formed over a semiconductor substrate. A first dielectric film is then formed over the gate pattern at a first temperature at which deformation or oxidation of a conductive material film forming the gate pattern is prevented. A denser second dielectric film is then formed over the first dielectric film at a second temperature higher than the first temperature. The second and first dielectric film are then anisotropically etched in sequence to form bi-layered spacers on the side walls of the gate pattern, including the first and second dielectric films. Because the deformation of the conductive material film forming the gate pattern is suppressed by forming the first dielectric film at a low temperature, the resistance of the gate electrodes resulting from this fabrication process remains low.

    摘要翻译： 提供一种用于在高度集成的半导体器件中形成MOS晶体管的方法。 在该方法中，最初在半导体衬底上形成栅极图案。 然后在形成栅极图案的导电材料膜的变形或氧化被阻止的第一温度下在栅极图案上形成第一电介质膜。 然后在高于第一温度的第二温度下在第一介电膜上形成更密集的第二介电膜。 然后依次各向异性地蚀刻第二和第一绝缘膜，以在栅极图案的侧壁上形成双层隔离物，包括第一和第二介电膜。 由于通过在低温下形成第一电介质膜来抑制形成栅极图案的导电材料膜的变形，所以由该制造工艺产生的栅电极的电阻保持较低。

    Al-doped charge trap layer and non-volatile memory device including the same
    16.
    发明授权
    Al-doped charge trap layer and non-volatile memory device including the same 有权
    Al掺杂电荷陷阱层和包括其的非易失性存储器件

    公开(公告)号：US08053366B2

    公开(公告)日：2011-11-08

    申请号：US12923378

    申请日：2010-09-17

    申请人： Eun-ha Lee ,  Hlon-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    发明人： Eun-ha Lee ,  Hlon-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    IPC分类号： H01L21/336 ,  H01L21/44

    CPC分类号： H01L29/42332 ,  Y10T428/259

    摘要： Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.

    摘要翻译： 提供了铝（Al）掺杂的电荷阱层，非易失性存储器件及其制造方法。 电荷陷阱层可以包括捕获电荷的多个硅纳米点和覆盖硅纳米点的氧化硅层，其中电荷陷阱层掺杂有铝（Al）。 非挥发性存储器件可以包括衬底，该衬底包括在衬底的分离区域上的源极和漏极，在衬底上接触源极和漏极的隧道膜，根据示例性实施例的电荷陷阱层， 电荷陷阱层和阻挡膜上的栅电极。

    Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same
    17.
    发明申请
    Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same 有权
    Al掺杂电荷陷阱层，非易失性存储器件及其制造方法

    公开(公告)号：US20110006358A1

    公开(公告)日：2011-01-13

    申请号：US12923378

    申请日：2010-09-17

    申请人： Eun-ha Lee ,  Hlon-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    发明人： Eun-ha Lee ,  Hlon-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    IPC分类号： H01L29/792

    CPC分类号： H01L29/42332 ,  Y10T428/259

    摘要： Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.

    摘要翻译： 提供了铝（Al）掺杂的电荷阱层，非易失性存储器件及其制造方法。 电荷陷阱层可以包括捕获电荷的多个硅纳米点和覆盖硅纳米点的氧化硅层，其中电荷陷阱层掺杂有铝（Al）。 非挥发性存储器件可以包括衬底，该衬底包括在衬底的分离区域上的源极和漏极，在衬底上接触源极和漏极的隧道膜，根据示例性实施例的电荷陷阱层， 电荷陷阱层和阻挡膜上的栅电极。

    Method of fabricating gate structure of semiconductor device for repairing damage to gate oxide layer
    18.
    发明授权
    Method of fabricating gate structure of semiconductor device for repairing damage to gate oxide layer 失效
    制造半导体器件栅极结构修复对栅极氧化层损伤的方法

    公开(公告)号：US06333251B1

    公开(公告)日：2001-12-25

    申请号：US09639122

    申请日：2000-08-16

    申请人： Eun-ha Lee ,  Byung-chan Lee ,  Ho-kyu Kang

    发明人： Eun-ha Lee ,  Byung-chan Lee ,  Ho-kyu Kang

    IPC分类号： H01L213205

    CPC分类号： H01L29/66636 ,  H01L21/28052 ,  H01L21/28247

    摘要： A method of fabricating a gate of a semiconductor device, by which damage to a gate oxide layer is repaired, is provided. In an aspect of the method, a gate oxide layer is formed on a semiconductor substrate. A conductive layer containing silicon is formed on the gate oxide layer. A stacked structure with a polycrystalline silicon layer and a dichlorosilane-family tungsten silicide layer can be used as the conductive layer. A gate is formed by patterning the conductive layer. A silicon source layer which covers the sidewall of the gate is formed by selective epitaxial growth of silicon. The silicon source layer is grown to a thickness of about 200 Å or less. The silicon source layer is thermally treated at an oxidation atmosphere, thus repairing damage to the gate oxide layer.

    摘要翻译： 提供一种制造半导体器件的栅极的方法，通过该栅极对栅极氧化物层的损坏进行修复。 在该方法的一个方面中，在半导体衬底上形成栅氧化层。 在栅极氧化物层上形成含有硅的导电层。 可以使用具有多晶硅层和二氯硅烷族硅化钨层的堆叠结构作为导电层。 通过图案化导电层形成栅极。 通过硅的选择性外延生长形成覆盖栅极侧壁的硅源层。 硅源层生长至大约或以下的厚度。 硅源层在氧化气氛下热处理，从而修复对栅极氧化物层的损伤。