公开(公告)号：US06498078B2

公开(公告)日：2002-12-24

申请号：US09945932

申请日：2001-09-04

申请人： Babak Sadigh ,  Thomas J. Lenosky ,  Tomas Diaz de la Rubia ,  Martin Giles ,  Maria-Jose Caturla ,  Vidvuds Ozolins ,  Mark Asta ,  Silva Theiss ,  Majeed Foad ,  Andrew Quong

发明人： Babak Sadigh ,  Thomas J. Lenosky ,  Tomas Diaz de la Rubia ,  Martin Giles ,  Maria-Jose Caturla ,  Vidvuds Ozolins ,  Mark Asta ,  Silva Theiss ,  Majeed Foad ,  Andrew Quong

IPC分类号： H01L2120

CPC分类号： H01L29/161 ,  C30B29/605 ,  C30B33/00 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.

公开(公告)号：US20140239400A1

公开(公告)日：2014-08-28

申请号：US14273377

申请日：2014-05-08

申请人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

发明人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC分类号： H01L29/78 ,  H01L27/12

CPC分类号： H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

摘要： Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

摘要翻译： 实施例涉及具有栅极金属填充物的改进的三栅极器件，在三栅极晶体管的至少一部分上提供压缩或拉伸应力，由此增加载流子迁移率和工作频率。 实施例还考虑了使用改进的三栅极器件的方法。

公开(公告)号：US08362566B2

公开(公告)日：2013-01-29

申请号：US12144469

申请日：2008-06-23

申请人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

发明人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC分类号： H01L21/70

CPC分类号： H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

摘要： Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

公开(公告)号：US20100025775A1

公开(公告)日：2010-02-04

申请号：US12220985

申请日：2008-07-30

申请人： Martin Giles ,  Titash Rakshit ,  Lucian Shifren ,  Jack Kavalieros ,  Willy Rachmady

发明人： Martin Giles ,  Titash Rakshit ,  Lucian Shifren ,  Jack Kavalieros ,  Willy Rachmady

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/6653 ,  H01L21/7682 ,  H01L23/485 ,  H01L23/5222 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process includes planarizing a microelectronic device that includes a gate stack and adjacent trench contacts. The process also includes removing a gate spacer at the gate stack and replacing the gate spacer with a dielectric that results in a lowered overlap capacitance between the gate stack and an adjacent embedded trench contact.

摘要翻译： 一种方法包括平面化包括栅叠层和相邻沟槽触点的微电子器件。 该工艺还包括在栅极堆叠处移除栅极间隔物并用导电栅叠层和相邻的嵌入沟槽接触之间的重叠电容降低的电介质取代栅极间隔物。

公开(公告)号：US06617228B2

公开(公告)日：2003-09-09

申请号：US10246890

申请日：2002-09-18

申请人： Babak Sadigh ,  Thomas J. Lenosky ,  Tomas Diaz de la Rubia ,  Martin Giles ,  Maria-Jose Caturla ,  Vidvuds Ozolins ,  Mark Asta ,  Silva Theiss ,  Majeed Foad ,  Andrew Quong

发明人： Babak Sadigh ,  Thomas J. Lenosky ,  Tomas Diaz de la Rubia ,  Martin Giles ,  Maria-Jose Caturla ,  Vidvuds Ozolins ,  Mark Asta ,  Silva Theiss ,  Majeed Foad ,  Andrew Quong

IPC分类号： H01L2120

CPC分类号： H01L29/161 ,  C30B29/605 ,  C30B33/00 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.

公开(公告)号：US09224754B2

公开(公告)日：2015-12-29

申请号：US14273377

申请日：2014-05-08

申请人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

发明人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC分类号： H01L21/70 ,  H01L27/12 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

摘要： Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

摘要翻译： 实施例涉及具有栅极金属填充物的改进的三栅极器件，在三栅极晶体管的至少一部分上提供压缩或拉伸应力，由此增加载流子迁移率和工作频率。 实施例还考虑了使用改进的三栅极器件的方法。

公开(公告)号：US08741733B2

公开(公告)日：2014-06-03

申请号：US13750393

申请日：2013-01-25

申请人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

发明人： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC分类号： H01L21/76

CPC分类号： H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

摘要： Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

摘要翻译： 实施例涉及具有栅极金属填充物的改进的三栅极器件，在三栅极晶体管的至少一部分上提供压缩或拉伸应力，由此增加载流子迁移率和工作频率。 实施例还考虑了使用改进的三栅极器件的方法。

公开(公告)号：US20080299874A1

公开(公告)日：2008-12-04

申请号：US11809487

申请日：2007-06-01

申请人： Timothy M. Sullivan ,  Martin Giles

发明人： Timothy M. Sullivan ,  Martin Giles

IPC分类号： B24B1/00

CPC分类号： B24B7/241

摘要： A method for restoring acid etched glass includes grinding the glass and then applying an acid resistant polyester film over the glass. Grinding may be performed in steps going from course to fine grinding pads, and stopping with a 400 grit pad, leaving a somewhat cloudy appearing surface. The polyester film fills in small irregularities in the cloudy glass surface thus eliminating the need to polish the glass.

摘要翻译： 恢复酸蚀玻璃的方法包括研磨玻璃，然后在玻璃上涂覆耐酸聚酯薄膜。 研磨可以从一步到几个细研磨垫，并用400个砂砾垫停止，留下几何多云的出现表面。 聚酯薄膜在浑浊的玻璃表面填满小的凹凸，因此无需抛光玻璃。

公开(公告)号：US20070063279A1

公开(公告)日：2007-03-22

申请号：US11231002

申请日：2005-09-16

申请人： Peter Tolchinsky ,  Mohamad Shaheen ,  Martin Giles ,  Irwin Yablok ,  Aaron Budrevich

发明人： Peter Tolchinsky ,  Mohamad Shaheen ,  Martin Giles ,  Irwin Yablok ,  Aaron Budrevich

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392 ,  H01L21/84 ,  H01L21/00

CPC分类号： H01L21/76243

摘要： A method of forming a silicon-on-insulator wafer begins by providing a silicon wafer having a first surface. An ion implantation process is then used to implant oxygen within the silicon wafer to form an oxygen layer that is buried within the silicon wafer, thereby forming a silicon device layer that remains substantially free of oxygen between the oxygen layer and the first surface. An annealing process is then used to diffuse nitrogen into the silicon wafer, wherein the nitrogen diffuses into the silicon device layer and the oxygen layer. Finally, a second annealing process is used to form a silicon dioxide layer and a silicon oxynitride layer, wherein the second annealing process causes the implanted oxygen to react with the silicon to form the silicon dioxide layer and causes the diffused nitrogen to migrate and react with the silicon and the implanted oxygen to form the silicon oxynitride layer.

摘要翻译： 形成绝缘体上硅晶片的方法开始于提供具有第一表面的硅晶片。 然后使用离子注入工艺将氧气注入到硅晶片内以形成掩埋在硅晶片内的氧层，由此形成在氧层和第一表面之间基本上不含氧的硅器件层。 然后使用退火工艺将氮扩散到硅晶片中，其中氮扩散到硅器件层和氧层中。 最后，使用第二退火工艺形成二氧化硅层和氧氮化硅层，其中第二退火工艺使注入的氧与硅反应形成二氧化硅层，并使扩散的氮迁移并与 硅和注入的氧以形成氮氧化硅层。

公开(公告)号：US20050167652A1

公开(公告)日：2005-08-04

申请号：US11070365

申请日：2005-03-01

申请人： Thomas Hoffmann ,  Stephen Cea ,  Martin Giles

发明人： Thomas Hoffmann ,  Stephen Cea ,  Martin Giles

IPC分类号： H01L21/28 ,  H01L29/10 ,  H01L29/49 ,  H01L29/06

CPC分类号： H01L21/823807 ,  H01L21/28044 ,  H01L29/1054 ,  H01L29/4925 ,  H01L29/7842 ,  H01L29/7845

摘要： A method including forming a device on a substrate, the device including a gate electrode on a surface of the substrate; a first junction region and a second junction region in the substrate adjacent the gate electrode; and depositing a straining layer on the gate electrode.

摘要翻译： 一种包括在衬底上形成器件的方法，所述器件在衬底的表面上包括栅电极; 邻近栅电极的衬底中的第一结区和第二结区; 以及在所述栅电极上沉积应变层。