公开(公告)号：US20180120708A1

公开(公告)日：2018-05-03

申请号：US15849689

申请日：2017-12-21

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI

IPC: G03F7/40 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L51/00 ,  C08F12/24

Abstract: Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.

公开(公告)号：US20180101100A1

公开(公告)日：2018-04-12

申请号：US15838366

申请日：2017-12-12

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI

IPC: G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/325 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: A treatment liquid for rinsing and patterning a resist film obtained from an actinic ray-sensitive composition includes an organic solvent in which a content of a compound containing a sulfur atom in the treatment liquid is 10 mmol/L or lower, and the organic solvent is a hydrocarbon solvent. A pattern forming method includes: forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; exposing the resist film; and treating the exposed resist film with the treatment liquid.

公开(公告)号：US20220179312A1

公开(公告)日：2022-06-09

申请号：US17674824

申请日：2022-02-17

Applicant: FUJIFILM Corporation

Inventor： Toru TSUCHIHASHI

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32

Abstract: An object of the present invention is to provide a pattern forming method capable of forming a pattern having an excellent resolution, using a main chain scission-type resist; and a method for manufacturing an electronic device.
The pattern forming method of an embodiment of the present invention includes a step of forming a resist film on a support, using a resist composition including a polymer in which a bond of a main chain is scissed by exposure to reduce the molecular weight; a step of exposing the resist film; and a step of developing the exposed resist film using a developer, in which the developer includes an alcohol-based solvent including a branched hydrocarbon group as a main component.

公开(公告)号：US20180186907A1

公开(公告)日：2018-07-05

申请号：US15849690

申请日：2017-12-21

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI

IPC: C08F12/24 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.

公开(公告)号：US20180120697A1

公开(公告)日：2018-05-03

申请号：US15854780

申请日：2017-12-27

Applicant: FUJIFILM Corporation

Inventor： Toru FUJIMORI ,  Toru TSUCHIHASHI

IPC: G03F7/004

CPC classification number: G03F7/0044 ,  G03F7/0042

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive composition which has excellent heat stability and makes it possible to achieve high sensitivity and good roughness characteristics. The actinic ray-sensitive or radiation-sensitive composition according to the present invention contains (A) a compound in which in an organic/inorganic composite composition containing a metal or metalloid element, the aggregated domain size of the metal or metalloid element is 1 to 5 nm, and 1.2 to 2.0 mol times of a carboxylic acid and/or a carboxylic acid derivative with respect to the metal or metalloid element exists to form a coordinated structure; (B) a compound (Q) capable of generating an acid upon irradiation with actinic rays or radiation; and (C) an organic solvent.

公开(公告)号：US20170075222A1

公开(公告)日：2017-03-16

申请号：US15358537

申请日：2016-11-22

Applicant: FUJIFILM Corporation

Inventor： Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Hideaki TSUBAKI

IPC: G03F7/039 ,  G03F7/20 ,  C08F220/18 ,  G03F7/32 ,  G03F7/40 ,  G03F7/004 ,  G03F7/16

Abstract: A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.

Abstract translation: 图案形成方法依次包括使用含有具有酚羟基的重复单元的树脂（A）的活性光敏感或辐射敏感性树脂组合物在基材上形成膜，并且重复 具有通过酸的作用分解以产生羧基的基团的单元和在用活性光或辐射照射时产生酸的化合物（B）; 曝光电影; 并使用包括有机溶剂的显影剂显影所述曝光的膜，其中包含有机溶剂的显影剂含有具有8个或更多个碳原子的有机溶剂和2个或更少的杂原子的量为50质量％以上。

公开(公告)号：US20140342275A1

公开(公告)日：2014-11-20

申请号：US14452093

申请日：2014-08-05

Applicant: FUJIFILM Corporation

Inventor： Takeshi INASAKI ,  Takeshi KAWABATA ,  Tomotaka TSUCHIMURA ,  Toru TSUCHIHASHI

IPC: G03F7/038 ,  C08F261/02 ,  G03F7/20

CPC classification number: G03F7/0388 ,  C08F8/02 ,  C08F12/22 ,  C08F12/24 ,  C08F12/30 ,  C08F212/14 ,  C08F261/02 ,  C09D125/18 ,  G03F1/00 ,  G03F7/0002 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  C08F212/32

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group has been substituted with a group represented by the following General Formula (1) (in the formula, M11 represents a single bond or a divalent linking group; Q11 represents an alkyl group, a cycloalkyl group, or an aryl group).

Abstract translation: 光化射线敏感性或辐射敏感性树脂组合物含有含有至少一个酚羟基的化合物（P）和至少一个其中酚羟基的氢原子被下列基团取代的基团 通式（1）（式中，M11表示单键或二价连接基团，Q 11表示烷基，环烷基或芳基）。

公开(公告)号：US20140030656A1

公开(公告)日：2014-01-30

申请号：US14040171

申请日：2013-09-27

Applicant: Fujifilm Corporation

Inventor： Toshihiro USA ,  Toru TSUCHIHASHI

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F7/0392 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/322

Abstract: A method for forming a resist pattern that includes a layout having a minimum line width of 100 nm or less forms a resist film on a substrate, draws a lithography pattern on the resist film with a variable shape electron beam, and executes puddle development on the resist film such that the film reduction rate of the resist film at undissolved resist portions is 20% or less. Thereby, shifting from designs of lithography patterns due to switching operations of lithography apparatuses when forming resist patterns that include layouts with minimum line widths of 100 nm or less can be prevented.

Abstract translation: 用于形成抗蚀剂图形的方法包括具有100nm以下的最小线宽的布局的方法在基板上形成抗蚀剂膜，以可变形状的电子束在抗蚀剂膜上绘制光刻图案，并且在 使得未溶解的抗蚀剂部分的抗蚀剂膜的膜还原率为20％以下。 因此，可以防止当形成包括最小线宽为100nm或更小的布局的抗蚀剂图形时由于光刻设备的切换操作而导致的光刻图案的设计偏移。