SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
    5.
    发明申请
    SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION 审中-公开
    半导体元件和绝缘层形成组合物

    公开(公告)号:US20170005266A1

    公开(公告)日:2017-01-05

    申请号:US15259164

    申请日:2016-09-08

    Abstract: Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB), R1b represents a hydrogen atom, a halogen atom, or an alkyl group. L1b represents a single bond or a linking group, and Ar1b represents an aromatic ring, m1b represents an integer of 1 to 5.

    Abstract translation: 在通式(IA)中,R 1a表示氢原子,卤素原子或烷基。 L1a和L2a各自独立地表示单键或连接基团。 X表示可交联基团。 m2a表示1〜5的整数,并且在m2a为2以上的情况下,m 1a的数X可以相同或不同,m1a表示1〜5的整数,在m1a为 2个以上时,m1a个(-L2a-(X)m2a)可以相同也可以不同。 在通式(IB)中,R 1b表示氢原子,卤素原子或烷基。 L1b表示单键或连接基,Ar1b表示芳香环,m1b表示1〜5的整数。

    NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, AND, RESIST-COATED MASK BLANKS, METHOD FOR FORMING RESIST PATTERN, AND PHOTOMASK, EACH USING THE SAME
    8.
    发明申请
    NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, AND, RESIST-COATED MASK BLANKS, METHOD FOR FORMING RESIST PATTERN, AND PHOTOMASK, EACH USING THE SAME 审中-公开
    负极化学放大电阻组合物,电阻膜和耐蚀涂层掩模,形成耐蚀图案的方法和使用它们的光刻胶

    公开(公告)号:US20130084518A1

    公开(公告)日:2013-04-04

    申请号:US13633681

    申请日:2012-10-02

    CPC classification number: G03F7/0382 G03F1/56 G03F1/76

    Abstract: Disclosed is a negative chemical amplification resist composition including (A) a polymer compound having a repeating unit (P) represented by the following formula (I) which is stable in acids and alkalis, and a repeating unit (Q) having a phenolic hydroxyl group; (B) a compound capable of generating an acid when irradiated with actinic rays or a radiation; and (C) a cross-linking agent: in which, in the formula (I), R1 represents a hydrogen atom or a methyl group; L1 represents an oxygen atom or —NH—; L2 represents a single bond or an alkylene group; and A represents a polycyclic hydrocarbon group.

    Abstract translation: 公开了一种负极化学增幅抗蚀剂组合物,其包含(A)具有在酸和碱中稳定的由下式(I)表示的重复单元(P)的高分子化合物和具有酚羟基的重复单元(Q) ; (B)当用光化射线或辐射照射时能够产生酸的化合物; 和(C)交联剂:其中,在式(I)中,R 1表示氢原子或甲基; L1表示氧原子或-NH-; L2表示单键或亚烷基; A表示多环烃基。

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