摘要:
This invention disclosed a kind of electrode pick up structure in shallow trench isolation process. The active region is isolated by shallow trench. A pseudo-buried layer under the bottom of shallow trench is formed. The pseudo-buried layer extends into active region and connects to doping region one which needs to be picked up by an electrode. The pick up is realized by deep trench contacts which etch through STI and get in touch with pseudo buried layer. This invention can reduce the device size, pick up electrode resistance, collector parasitic capacitance, and increase device cut off frequency.
摘要:
The invention provides methods and compositions for rapid, sensitive, and highly specific nucleic acid-based (e.g., DNA based) detection of a BK virus in a sample. In general, the methods involve detecting a target nucleic acid having a target sequence of a conserved region of BK viral genomes. The invention also features compositions, including primers, probes, and kits, for use in the methods of the invention.
摘要:
Disclosed herein are methods and compositions for detecting one or more pathogens that cause atypical pneumonia. Detectable pathogens include Mycoplasma pneumoniae, Chlamydophila pneumoniae, and Legionella pneumophila.
摘要:
Disclosed herein are methods and compositions for detecting Bordetella pertussis and Bordetella parapertussis by detecting the presence of the IS481 and IS1001 genomic insertion sequences, respectively.
摘要:
A SiGe HBT formed on a silicon substrate is disclosed. An active area is isolated by field oxide regions; a collector region is formed in the active area and extends into the bottom of the field oxide regions; pseudo buried layers are formed at the bottom of the field oxide regions, wherein each pseudo buried layer is separated by a lateral distance from the active area and connected to a lateral extension part of the collector region; first deep hole contacts are formed on top of the pseudo buried layers in the field oxide regions to pick up collector electrodes; a plurality of second deep hole contacts with a floating structure, are formed in the field oxide region on top of a lateral extension part of the collector region, wherein N-type implantation regions are formed at the bottom of the second deep hole contacts.
摘要:
This invention disclosed a novel manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that an oxide-nitride-oxide (ONO) sandwich structure is employed instead of oxide-nitride dual layer structure before trench etching. Another aspect is, through the formation of silicon oxide spacer in trench sidewall and silicon oxide remaining in trench bottom in the deposition and etch back process, the new structure hard mask can effectively protect active region from impurity implanted in ion implantation process.
摘要:
This invention disclosed a kind of electrode picking up structure in LOCOS isolation process. The active region is isolated by local oxide of silicon (LOCOS). A pseudo buried layer under the bottom of LOCOS is formed. The pseudo-buried layer extends into active region and connects to doping region one which needs to be picked up by an electrode. This is achieved by deep trench contacts which etch through LOCOS and get in touch with pseudo buried layer. This invention can reduce the device size, pick up electrode resistance, collector parasitic capacitance, and increase device cut off frequency.
摘要:
The present invention generally relates to a molecular test of Influenza A, Influenza B, Respiratory Syncytial Virus A, and Respiratory Syncytial Virus B in order to identify patients with a viral infection. Accordingly methods and compositions are disclosed to determine the presence or absence of a viral pathogen in a sample containing one or more target nucleic acids from the M gene of Influenza A, Influenza B, Respiratory Syncytial Virus A, and/or Respiratory Syncytial Virus B.
摘要:
This invention provides a method of detecting polymorphisms, e.g., single nucleotide polymorphisms (SNPs), by amplification and error correction. The invention encompasses methods of performing amplification and error correction using an improved generation of nucleic acid polymerases, and methods of multiplexing the assay. The improvement to the polymerases is the joining of a sequence-non-specific nucleic-acid-binding domain to the enzyme in a manner that enhances the ability of the enzyme to bind and catalytically modify the nucleic acid.
摘要:
The current invention provides a method of performing DNA polymorphism assays. The assay combines allele-specific PCR with technology used for quantitative PCR. The method can be used to score the presence of absence of particular polymorphisms in a DNA sample. In a further aspect of the invention, the method is used to score the presence or absence of particular haplotypes in a DNA sample.