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11.发明申请Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method 有权在通过该方法制造的载体，载体和半导体晶片的两侧加工半导体晶片的方法公开(公告)号：US20070021042A1
公开(公告)日：2007-01-25
申请号：US11487652
申请日：2006-07-17
IPC分类号： B24B7/00
CPC分类号： B24B37/28 , Y10S438/959
摘要： A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces simultaneously. The semiconductor wafer is machined until it is thinner than a carrier body and thicker than an inlay used to line the cutout in the carrier to protect the semiconductor wafer. The carrier is distinguished by the fact that the carrier body and the inlay have different thicknesses throughout the entire duration of the machining of the semiconductor wafer, the carrier body being thicker than the inlay, by from 20 to 70 μm. The method provides semiconductor wafers polished on both sides, having a front surface, a back surface and an edge, and a local flatness of the front surface, SFQRmax of less than 50 nm with an edge exclusion of R-2 mm and less than 115 nm with an edge exclusion of R-1 mm, based on a site area of 26 by 8 mm.
摘要翻译： 半导体晶片被引导在载体的切口中，同时通过从前表面和背面去除材料将半导体晶片的厚度减小到目标厚度。 半导体晶片被加工直到其比载体体薄并且比用于将载体上的切口对准的嵌体更厚以保护半导体晶片。 载体的特征在于，在半导体晶片的加工整个整个持续时间内，载体主体和嵌体具有不同的厚度，载体主体比镶嵌物厚20〜70μm。 该方法提供在两侧抛光的半导体晶片，具有前表面，后表面和边缘以及前表面的局部平坦度，SFQR
小于50nm，边缘排除 R-2mm和小于115nm，边缘排除R-1mm，基于26×8mm的位置面积。 -
公开(公告)号：US08647985B2
公开(公告)日：2014-02-11
申请号：US12166486
申请日：2008-07-02
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.
摘要翻译： 通过包括至少一个研磨步骤A的方法对半导体材料基板进行抛光，利用该抛光步骤A，在包含在研磨垫中结合的研磨材料的抛光垫上抛光基板，并且在基板和抛光垫之间引入抛光剂溶液 在抛光步骤中; 以及至少一个抛光步骤B，通过该抛光步骤B将衬底抛光在包含含研磨材料的抛光垫的抛光垫上，并且其中在抛光步骤中将含有未结合磨料的抛光剂浆料引入衬底和抛光垫之间 。
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13.发明授权Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side 有权包括具有前侧和后侧的硅单晶衬底和沉积在正面上的SiGe层的晶片的制造方法公开(公告)号：US08093143B2
公开(公告)日：2012-01-10
申请号：US12724584
申请日：2010-03-16
申请人： Peter Storck , Thomas Buschhardt
发明人： Peter Storck , Thomas Buschhardt
IPC分类号： H01L21/36
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02658 , Y10S438/933
摘要： A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order: simultaneously polishing the front and the back side of the silicon single crystal substrate; depositing a stress compensating layer on the back side of the silicon single crystal substrate; polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; and depositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.
摘要翻译： 一种用于制造具有正面和背面的硅单晶基板和沉积在正面上的SiGe层的晶片的方法，该方法使用以下顺序的步骤：同时抛光硅的正面和背面 单晶基板; 在所述硅单晶衬底的背面上沉积应力补偿层; 抛光硅单晶衬底的正面; 清洗具有沉积在背面的应力补偿层的硅单晶衬底; 以及在硅单晶衬底的正面上沉积完全或部分弛豫的SiGe层。
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公开(公告)号：US20110244762A1
公开(公告)日：2011-10-06
申请号：US13041477
申请日：2011-03-07
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08
摘要： A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.
摘要翻译： 一种用于半导体晶片的双面抛光的方法包括将半导体晶片置于载体的切口中，所述载体的切口位于由第一抛光垫覆盖的上抛光板和被第二抛光覆盖的下抛光板之间的工作间隙中 垫。 第一和第二抛光垫各自包括通过焊盘上的通道布置形成的平铺方形区段，其中第一焊盘的正方形段大于第二焊盘的段。 抛光垫的方形片段包括磨料。 在抛光期间，载体被引导使得晶片的一部分临时突出到工作间隙外侧。 在第一步骤期间，在pH为11至12.5的范围内，在第二步骤期间，在至少13℃的pH下，在抛光期间提供pH可变的抛光剂。
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公开(公告)号：US06530826B2
公开(公告)日：2003-03-11
申请号：US10021515
申请日：2001-10-30
IPC分类号： B24B100
CPC分类号： H01L21/02024
摘要： A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.
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公开(公告)号：US6095898A
公开(公告)日：2000-08-01
申请号：US181428
申请日：1998-10-28
申请人： Heinrich Hennhofer , Hans Kramer , Helmut Kirschner , Manfred Thurner , Thomas Buschhardt , Klaus Rottger
发明人： Heinrich Hennhofer , Hans Kramer , Helmut Kirschner , Manfred Thurner , Thomas Buschhardt , Klaus Rottger
IPC分类号： B24B37/04 , B24B49/14 , H01L21/304 , B24B1/00
CPC分类号： B24B37/12 , B24B37/015 , B24B37/042
摘要： A process and device for polishing semiconductor wafers has at least one side of at least one semiconductor wafer pressed against a polishing plate, over which a polishing cloth is stretched. The semiconductor wafer and the polishing plate are moved relative to each other to polish the wafer. During the polishing, the semiconductor wafer passes over at least two regions on the polishing plate, which regions have defined radial widths and are at different temperatures. Temperature-control means are provided in the polishing plate, with the aid of which the number, the radial widths and the temperatures of the regions are fixed before the semiconductor wafers are polished.
摘要翻译： 用于抛光半导体晶片的工艺和装置具有至少一个半导体晶片的至少一侧，该至少一个半导体晶片压在抛光板上，抛光布被拉伸。 半导体晶片和抛光板相对于彼此移动以抛光晶片。 在抛光期间，半导体晶片通过抛光板上的至少两个区域，这些区域具有限定的径向宽度并处于不同的温度。 温度控制装置设置在抛光板中，借助于此，在半导体晶片被抛光之前，区域的数量，径向宽度和温度被固定。
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公开(公告)号：US20090145457A1
公开(公告)日：2009-06-11
申请号：US12326969
申请日：2008-12-03
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
IPC分类号： B08B3/04
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
摘要翻译： 半导体晶片的湿化学处理方法包括：a）旋转半导体晶片; b）将包含直径为100μm或更小的气泡的清洗液施加到旋转的晶片上，使得在晶片上形成液膜; c）将旋转的半导体晶片暴露于含有反应气体的气氛中; 和d）从晶片上去除液膜。
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公开(公告)号：US20090029552A1
公开(公告)日：2009-01-29
申请号：US12166486
申请日：2008-07-02
IPC分类号： H01L21/465
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.
摘要翻译： 通过包括至少一个研磨步骤A的方法对半导体材料基板进行抛光，利用该抛光步骤A，在包含在研磨垫中结合的研磨材料的抛光垫上抛光基板，并且将抛光剂溶液引入到基板和抛光垫 在抛光步骤中; 以及至少一个抛光步骤B，通过该抛光步骤B将衬底抛光在包含含研磨材料的抛光垫的抛光垫上，并且其中在抛光步骤中将含有未结合磨料的抛光剂浆料引入衬底和抛光垫之间 。
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19.发明申请公开(公告)号：US20080308122A1
公开(公告)日：2008-12-18
申请号：US12134378
申请日：2008-06-06
IPC分类号： C23G1/02
CPC分类号： H01L21/02052 , C30B29/16 , C30B33/00
摘要： Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.
摘要翻译： 半导体晶片按照以下顺序进行以下步骤的清洗，干燥和亲水化：a）用含有氟化氢的液体水溶液处理半导体晶片，半导体晶片至少偶尔围绕其中心轴线旋转，以及b）干燥半导体 在含有臭氧的气氛中以1000-5000转/分钟的转速使半导体晶片围绕其中心轴线旋转，由于由半导体晶片产生的离心力，含有氟化氢的液体水溶液离开半导体晶片 半导体晶片的旋转和表面被臭氧亲水化。
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20.发明申请Methods for the single-sided polishing of semiconductor wafers and semiconductor wafer having a relaxed Si1-x GEx Layer 审中-公开具有弛豫Si1-xGGx层的半导体晶片和半导体晶片的单面抛光方法公开(公告)号：US20080265375A1
公开(公告)日：2008-10-30
申请号：US12148739
申请日：2008-04-22
IPC分类号： H01L21/306 , H01L29/30
CPC分类号： H01L21/30625 , C09G1/02
摘要： Single-sided polishing of semiconductor wafers provided with a relaxed Si1-xGex layer involves polishing of a multiplicity of wafers in a plurality of polishing runs, a polishing run having at least one polishing step, at least one of the multiplicity of wafers obtained with a polished Si1-xGex layer at the end of each polishing run; moving the wafer during the polishing step over a rotating polishing plate provided with a polishing cloth while applying polishing pressure, and supplying polishing agent between the polishing cloth and the semiconductor wafer, the polishing agent containing an alkaline component and a component that dissolves germanium. Semiconductor wafer having a Si1-xGex layer substantially free of defects and haze is produced.
摘要翻译： 设置有松弛的Si 1-x N x层的半导体晶片的单面抛光涉及在多个抛光运行中抛光多个晶片，抛光运行具有 至少一个研磨步骤，在每个抛光运行结束时用抛光的Si 1-x Ge x N层获得的多个晶片中的至少一个; 在抛光步骤期间将晶片在设置有抛光布的旋转抛光板上移动，同时施加抛光压力，并在抛光布和半导体晶片之间提供抛光剂，抛光剂含有碱性成分和溶解锗的成分。 产生具有基本上没有缺陷和雾度的Si 1-x N z O x S层的半导体晶片。
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