公开(公告)号：US5284800A

公开(公告)日：1994-02-08

申请号：US838538

申请日：1992-02-19

申请人： Chuen-Der Lien ,  Daniel Liao ,  Jowei Dun

发明人： Chuen-Der Lien ,  Daniel Liao ,  Jowei Dun

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76802 ,  Y10S148/133

摘要： An embodiment of the present invention is a semiconductor fabrication process that deposits an oxide layer after a step to make contact openings in a BPSG layer and before a contact reflow step. The oxide allows implant dopants to be properly activated in the contact reflow step without excessive reflow of the BPSG.

摘要翻译： 本发明的一个实施方案是半导体制造方法，其在步骤之后沉积氧化物层以在BPSG层中和在接触回流步骤之前进行接触开口。 氧化物允许在接触回流步骤中适当地激活注入掺杂剂，而不会使BPSG过度回流。

公开(公告)号：US06291331B1

公开(公告)日：2001-09-18

申请号：US09412654

申请日：1999-10-04

申请人： Ying-Lang Wang ,  Jowei Dun ,  Ming-Jer Lee ,  Tong-Hua Kuan

发明人： Ying-Lang Wang ,  Jowei Dun ,  Ming-Jer Lee ,  Tong-Hua Kuan

IPC分类号： H01L2144

CPC分类号： H01L21/76801 ,  H01L2224/02166 ,  H01L2224/05093

摘要： A new method is provided for the creation of layers of dielectric that are used for metal stack interconnect layers where the metal stack exceeds five layers. A stack of five layers of metal interconnect lines contains one layer of Intra Metal dielectric (ILD) and four layers of Inter Metal dielectric (IMD). One or more of the layers of IMD can be formed in the conventional method. One or more of the layers of IMD can be formed in the conventional method after which a layer of high compressive PECVD is deposited over this one or more layers of IMD. The layer of high compressive PECVD provides a crack resistant film that eliminates the formation of cracks in the surface of the IMD.

摘要翻译： 提供了一种新的方法，用于创建用于金属堆叠互连层的电介质层，其中金属叠层超过五层。 五层金属互连线的堆叠包含一层金属介电介质（ILD）和四层金属间介质（IMD）。 IMD的一个或多个层可以用常规方法形成。 可以以常规方法形成IMD的一个或多个层，之后在该一个或多个IMD层上沉积高压缩PECVD层。 高压缩PECVD层提供了抗裂膜，消除了在IMD表面形成裂缝。

公开(公告)号：US6099662A

公开(公告)日：2000-08-08

申请号：US248726

申请日：1999-02-11

申请人： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

发明人： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  B08B3/00 ,  H01L21/00

CPC分类号： H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

摘要： An improved method for removing residual slurry particles and metallic residues from the surface of a semiconductor substrate after chemical-mechanical polishing has been developed. The cleaning method involves sequential spray cleaning solutions of NH.sub.4 OH and H.sub.2 O, NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, HF and H.sub.2 O, and HCl, H.sub.2 O.sub.2 and H.sub.2 O. The cleaning sequence is: 1. A pre-soak in a spray solution of NH.sub.4 OH and H.sub.2 O; 2. Spray cleaning in a solution of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O; 3. Spray cleaning in a dilute solution of HF and H.sub.2 O; 4. Spray rinsing in DI-water. It is important that slurry particulates first be removed by NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, followed by spray cleaning in a dilute solution of HF and H.sub.2 O to remove metallic residues. The spray cleaning method is superior to brush cleaning methods for both oxide-CMP and tungsten-CMP and results in superior removal of slurry particles and metallic residues introduced by the CMP processes. An optional spray cleaning step using a solution of HCl, H.sub.2 O.sub.2 and H.sub.2 O results in further reduction of metallic residue contamination following oxide-CMP. Compared to traditional brush cleaning the new spray cleaning process has a 2.times. improvement in throughput, less consumption of DI water, and low risk of cross-contamination between sequentially cleaned substrates.

摘要翻译： 已经开发了用于在化学机械抛光之后从半导体衬底的表面除去残余浆料颗粒和金属残留物的改进方法。 清洗方法包括NH 4 OH和H 2 O，NH 4 OH，H 2 O 2和H 2 O，HF和H 2 O以及HCl，H 2 O 2和H 2 O的顺序喷雾清洗溶液。 清洗顺序为：1.在NH4OH和H2O的喷雾溶液中预浸泡; 2.在NH4OH，H2O2和H2O溶液中喷雾清洗; 3.在HF和H2O的稀溶液中喷雾清洗; 4.在DI水中喷淋。 重要的是，首先通过NH 4 OH，H 2 O 2和H 2 O除去浆料颗粒，然后在HF和H 2 O的稀溶液中喷雾清洗以除去金属残余物。 喷雾清洗方法优于氧化物CMP和钨-CMP两者的刷子清洗方法，并且优异地除去由CMP工艺引入的浆料颗粒和金属残留物。 使用HCl，H2O2和H2O溶液的可选喷雾清洗步骤可以进一步降低氧化物CMP后的金属残留污染。 与传统的刷子清洁相比，新的喷雾清洁过程在吞吐量方面有2倍的改善，更少的去离子水消耗，以及顺序清洗的基材之间交叉污染的风险较低。