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    Process for cleaning a semiconductor substrate after chemical-mechanical polishing
    1.
    发明授权
    Process for cleaning a semiconductor substrate after chemical-mechanical polishing 有权
    化学机械抛光后清洗半导体衬底的工艺

    公开(公告)号：US6099662A

    公开(公告)日：2000-08-08

    申请号：US248726

    申请日：1999-02-11

    申请人： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

    发明人： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

    IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  B08B3/00 ,  H01L21/00

    CPC分类号： H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

    摘要： An improved method for removing residual slurry particles and metallic residues from the surface of a semiconductor substrate after chemical-mechanical polishing has been developed. The cleaning method involves sequential spray cleaning solutions of NH.sub.4 OH and H.sub.2 O, NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, HF and H.sub.2 O, and HCl, H.sub.2 O.sub.2 and H.sub.2 O. The cleaning sequence is: 1. A pre-soak in a spray solution of NH.sub.4 OH and H.sub.2 O; 2. Spray cleaning in a solution of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O; 3. Spray cleaning in a dilute solution of HF and H.sub.2 O; 4. Spray rinsing in DI-water. It is important that slurry particulates first be removed by NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, followed by spray cleaning in a dilute solution of HF and H.sub.2 O to remove metallic residues. The spray cleaning method is superior to brush cleaning methods for both oxide-CMP and tungsten-CMP and results in superior removal of slurry particles and metallic residues introduced by the CMP processes. An optional spray cleaning step using a solution of HCl, H.sub.2 O.sub.2 and H.sub.2 O results in further reduction of metallic residue contamination following oxide-CMP. Compared to traditional brush cleaning the new spray cleaning process has a 2.times. improvement in throughput, less consumption of DI water, and low risk of cross-contamination between sequentially cleaned substrates.

    摘要翻译： 已经开发了用于在化学机械抛光之后从半导体衬底的表面除去残余浆料颗粒和金属残留物的改进方法。 清洗方法包括NH 4 OH和H 2 O，NH 4 OH，H 2 O 2和H 2 O，HF和H 2 O以及HCl，H 2 O 2和H 2 O的顺序喷雾清洗溶液。 清洗顺序为：1.在NH4OH和H2O的喷雾溶液中预浸泡; 2.在NH4OH，H2O2和H2O溶液中喷雾清洗; 3.在HF和H2O的稀溶液中喷雾清洗; 4.在DI水中喷淋。 重要的是，首先通过NH 4 OH，H 2 O 2和H 2 O除去浆料颗粒，然后在HF和H 2 O的稀溶液中喷雾清洗以除去金属残余物。 喷雾清洗方法优于氧化物CMP和钨-CMP两者的刷子清洗方法，并且优异地除去由CMP工艺引入的浆料颗粒和金属残留物。 使用HCl，H2O2和H2O溶液的可选喷雾清洗步骤可以进一步降低氧化物CMP后的金属残留污染。 与传统的刷子清洁相比，新的喷雾清洁过程在吞吐量方面有2倍的改善，更少的去离子水消耗，以及顺序清洗的基材之间交叉污染的风险较低。

    Method for reducing stress and improving step-coverage of tungsten interconnects and plugs
    2.
    发明授权
    Method for reducing stress and improving step-coverage of tungsten interconnects and plugs 失效
    降低应力并改善钨互连和插头的阶梯覆盖的方法

    公开(公告)号：US5956609A

    公开(公告)日：1999-09-21

    申请号：US907985

    申请日：1997-08-11

    申请人： Jiun-Chung Lee ,  Hui-Ling Wang ,  Jowei Dun ,  Ken-Shen Chou

    发明人： Jiun-Chung Lee ,  Hui-Ling Wang ,  Jowei Dun ,  Ken-Shen Chou

    IPC分类号： H01L21/768 ,  H01L21/443

    CPC分类号： H01L21/76876 ,  H01L21/76843 ,  H01L21/76877

    摘要： A method is described for improving the step coverage of tungsten interconnects and plugs when deposited at low temperatures into contact/via openings having high aspect ratios. The depositions are made at pressures between 4.5 and 100 Torr in a CVD tool. The method includes a first nucleation step, and a second step for filling the contact/via openings wherein deposition conditions favor good step coverage. For forming an interconnect and a third deposition step, providing moderate step coverage and low stress, is used to build up the interconnect. The high pressures permit deposition at practical rates at low temperatures. In addition the high pressures also permit application of backside gas pressure to the wafer during deposition, thereby improving the thermal contact between the wafer and the heated substrate holder. This contributes significantly to stress reduction and improved step coverage.

    摘要翻译： 描述了一种用于在低温沉积到具有高纵横比的接触/通孔开口时改善钨互连和插塞的台阶覆盖率的方法。 沉积物在CVD工具中的压力为4.5至100托之间。 该方法包括第一成核步骤和用于填充接触/通孔的第二步骤，其中沉积条件有利于良好的步骤覆盖。 为了形成互连和第三沉积步骤，提供适度的阶梯覆盖和低应力，用于建立互连。 高压允许在低温下以实际的速率沉积。 此外，高压还允许在沉积期间向晶片施加背侧气体压力，从而改善晶片和加热的衬底保持器之间的热接触。 这显着地减轻了压力并提高了台阶覆盖率。