公开(公告)号：US10566291B2

公开(公告)日：2020-02-18

申请号：US15898606

申请日：2018-02-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ming Hao Tang ,  Yuping Ren ,  Rui Chen ,  Bradley Morgenfeld ,  Zheng G. Chen

IPC: H01L23/544 ,  G03F9/00 ,  G03F7/20 ,  G01N21/95 ,  H01L21/66

Abstract: This disclosure relates to a structure for aligning layers of an integrated circuit (IC) structure that may include a first dielectric layer positioned above a semiconductor substrate having one or more active devices, a trench stop layer positioned above the first dielectric layer, a second dielectric layer positioned above the trench stop layer, and a plurality of metal-filled marking trenches extending vertically through the second dielectric layer and the trench stop layer and at least partially into the first dielectric layer. The metal-filled trenches are electrically isolated from any active devices contained in the IC.

公开(公告)号：US10566195B2

公开(公告)日：2020-02-18

申请号：US15689668

申请日：2017-08-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Jinping Liu ,  Rui Chen

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/768

Abstract: Methods of multiple patterning. First and second mandrel lines are formed on a patternable layer. Sidewall spacers are formed on the patternable layer adjacent to the first mandrel line and adjacent to the second mandrel line. A portion of the first mandrel line is removed to form a gap in the first mandrel line. A gapfill material is deposited in the gap in the first mandrel line. The gapfill material and sidewall spacers are composed of the same material.

公开(公告)号：US20190267329A1

公开(公告)日：2019-08-29

申请号：US15904853

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cung D. Tran ,  Huaxiang Li ,  Bradley Morgenfeld ,  Xintuo Dai ,  Sanggil Bae ,  Rui Chen ,  Md Motasim Bellah ,  Dongyue Yang ,  Minghao Tang ,  Christian J. Ayala ,  Ravi Prakash Srivastava ,  Kripa Nidhan Chauhan ,  Pavan Kumar Chinthamanipeta Sripadarao

IPC: H01L23/544 ,  G03F9/00 ,  G03F7/16 ,  H01L21/027

Abstract: In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.

公开(公告)号：US20190067010A1

公开(公告)日：2019-02-28

申请号：US15689668

申请日：2017-08-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Jinping Liu ,  Rui Chen

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76816

Abstract: Methods of multiple patterning. First and second mandrel lines are formed on a patternable layer. Sidewall spacers are formed on the patternable layer adjacent to the first mandrel line and adjacent to the second mandrel line. A portion of the first mandrel line is removed to form a gap in the first mandrel line. A gapfill material is deposited in the gap in the first mandrel line. The gapfill material and sidewall spacers are composed of the same material.