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    Memory device and methods of making such a memory device
    11.
    发明授权
    Memory device and methods of making such a memory device 有权

    公开(公告)号：US11437568B2

    公开(公告)日：2022-09-06

    申请号：US16836434

    申请日：2020-03-31

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Yanping Shen ,  Haiting Wang ,  Sipeng Gu

    IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

    Abstract: One illustrative memory cell disclosed herein includes at least one layer of insulating material having a first opening and an internal sidewall spacer positioned within the first opening, wherein the internal sidewall spacer includes a spacer opening. The memory cell also includes a bottom electrode positioned within the spacer opening, a memory state material positioned above an upper surface of the bottom electrode and above an upper surface of the internal sidewall spacer, and a top electrode positioned above the memory state material.

    Transistors with source/drain regions having sections of epitaxial semiconductor material
    12.
    发明授权
    Transistors with source/drain regions having sections of epitaxial semiconductor material 有权

    公开(公告)号：US11164795B2

    公开(公告)日：2021-11-02

    申请号：US16828273

    申请日：2020-03-24

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

    IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/08

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.

    TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING SECTIONS OF EPITAXIAL SEMICONDUCTOR MATERIAL
    13.
    发明申请
    TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING SECTIONS OF EPITAXIAL SEMICONDUCTOR MATERIAL 有权

    公开(公告)号：US20210305103A1

    公开(公告)日：2021-09-30

    申请号：US16828273

    申请日：2020-03-24

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

    IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/10

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.

    TRANSISTORS WITH A SECTIONED EPITAXIAL SEMICONDUCTOR LAYER
    14.
    发明申请
    TRANSISTORS WITH A SECTIONED EPITAXIAL SEMICONDUCTOR LAYER 有权

    公开(公告)号：US20210288182A1

    公开(公告)日：2021-09-16

    申请号：US16819832

    申请日：2020-03-16

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/51 ,  H01L29/10 ,  H01L21/02

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body, a second gate structure that extends over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first section and a second section. The second semiconductor layer is positioned laterally between the first section of the first semiconductor layer and the second section of the first semiconductor layer.

    TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN
    15.
    发明申请
    TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN 有权

    公开(公告)号：US20210249508A1

    公开(公告)日：2021-08-12

    申请号：US17243832

    申请日：2021-04-29

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Jiehui Shu ,  Baofu Zhu ,  Haiting Wang ,  Sipeng Gu

    IPC: H01L29/08 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure is arranged over a channel region of a semiconductor body. A first source/drain region is coupled to a first portion of the semiconductor body, and a second source/drain region is located in a second portion the semiconductor body. The first source/drain region includes an epitaxial semiconductor layer containing a first concentration of a dopant. The second source/drain region contains a second concentration of the dopant. The channel region is positioned in the semiconductor body between the first source/drain region and the second source/drain region.

    TRANSISTORS WITH A HYBRID SOURCE OR DRAIN
    16.
    发明申请
    TRANSISTORS WITH A HYBRID SOURCE OR DRAIN 有权

    公开(公告)号：US20210242344A1

    公开(公告)日：2021-08-05

    申请号：US16781236

    申请日：2020-02-04

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Haiting Wang ,  Sipeng Gu ,  Jiehui Shu ,  Baofu Zhu

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure extends over a channel region in a semiconductor body. The gate structure has a first side surface and a second side surface opposite the first side surface. A first source/drain region is positioned adjacent to the first side surface of the gate structure and a second source/drain region is positioned adjacent to the second side surface of the gate structure. The first source/drain region includes a first epitaxial semiconductor layer, and the second source/drain region includes a second epitaxial semiconductor layer. A first top surface of the first epitaxial semiconductor layer is positioned at a first distance from the channel region, a second top surface of the second epitaxial semiconductor layer is positioned at a second distance from the channel region, and the first distance is greater than the second distance.

    Transistors with separately-formed source and drain
    17.
    发明授权
    Transistors with separately-formed source and drain 有权

    公开(公告)号：US11075268B2

    公开(公告)日：2021-07-27

    申请号：US16541600

    申请日：2019-08-15

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Jiehui Shu ,  Baofu Zhu ,  Haiting Wang ,  Sipeng Gu

    IPC: H01L29/08 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure is arranged over a channel region of a semiconductor body. A first source/drain region is coupled to a first portion of the semiconductor body, and a second source/drain region is located in a second portion the semiconductor body. The first source/drain region includes an epitaxial semiconductor layer containing a first concentration of a dopant. The second source/drain region contains a second concentration of the dopant. The channel region is positioned in the semiconductor body between the first source/drain region and the second source/drain region.

    Semiconductor structures in a wide gate pitch region of semiconductor devices
    18.
    发明授权
    Semiconductor structures in a wide gate pitch region of semiconductor devices 有权

    公开(公告)号：US11043566B2

    公开(公告)日：2021-06-22

    申请号：US16599116

    申请日：2019-10-10

    Applicant: GLOBALFOUNDRIES U.S. INC.

    Inventor： Jiehui Shu ,  Judson Robert Holt ,  Sipeng Gu ,  Haiting Wang

    IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/417

    Abstract: A semiconductor device is provided that includes a substrate, an active region, a pair of gates, a plurality of semiconductor structures and a plurality of pillar structures. The active region is over the substrate. The pair of gates is formed over the active region, and each gate of the pair of gates includes a gate structure and a pair of spacer structures disposed on sidewalls of the gate structure. The plurality of semiconductor structures is arranged between the pair of gates in an alternating arrangement configuration having a first width and a second width. The first width is substantially equal to a width of the gate structure. The plurality of semiconductor structures is separated by the plurality of pillar structures.

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