公开(公告)号：US5505785A

公开(公告)日：1996-04-09

申请号：US276202

申请日：1994-07-18

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67057

Abstract: A method and apparatus for removing particle, metallic and organic contamination from the wafers used in fabricating integrated circuits is disclosed. In the preferred embodiment, the method comprises the step of placing the wafers to be processed in a vessel or container constructed of a very pure metal, and upon which a surface oxide will quickly form in air. The metal vessel or container is then filled with a cleaning solvent such as sulfuric acid, and are ultrasonically vibrated to remove the contamination. The ultrasonic vibration causes an acoustic streaming of the sulfuric acid, leading to a microflow of the solvent across the surface of the wafer at speeds on the order of several meters per second. This microflow provides for an quick and efficient cleaning of the wafer at reduced temperatures, thereby increasing the overall throughput of the planar fabrication process. The apparatus comprises a vessel or container constructed from a very pure metal, and containing an acidic cleaning solvent. The metal vessel or container is coupled to an ultrasonic vibrating device which ultrasonically vibrates the vessel or container, thereby cleaning the wafers.

Abstract translation: 公开了一种用于从用于制造集成电路的晶片中去除颗粒，金属和有机污染物的方法和装置。 在优选实施例中，该方法包括以下步骤：将要处理的晶片放置在由非常纯的金属构成的容器或容器中，并且在空气中快速形成表面氧化物。 然后将金属容器或容器装入诸如硫酸的清洁溶剂中，并且超声振动以除去污染物。 超声波振动导致硫酸的声流，导致溶剂在晶片表面上的微流量以几米每秒的速度。 该微流提供了在降低的温度下快速且有效地清洁晶片，从而增加了平面制造工艺的总体生产量。 该装置包括由非常纯的金属构成并容纳酸性清洁溶剂的容器或容器。 金属容器或容器联接到超声波振动装置，其超声振动容器或容器，从而清洁晶片。

公开(公告)号：US07181863B2

公开(公告)日：2007-02-27

申请号：US11075872

申请日：2005-03-09

Applicant: Gary W. Ferrell ,  Jagjit S. Ratra

Inventor： Gary W. Ferrell ,  Jagjit S. Ratra

IPC: F26B3/00

CPC classification number: H01L21/67034

Abstract: A wafer dryer and method featuring a nebulizer which emits a pressurized drying liquid stream that converges with an opposed pressurized non-reactive carrier gas stream to produce a drying liquid fog. The pressurized non-reactive gas spray device is disposed partially within a tub and partially within a wafer bath vessel housing a wafer to be dried. The tub has a vent port for allowing the drying liquid fog to pass into the wafer bath vessel to adhere to exposed wafer surfaces and displace remaining liquid on wafer surfaces, thus drying the wafer. The tub may further include a drain for draining drying liquid not converted into the fog or which has condensed. The vent also may include means for retaining larger drying liquid fog particles which allows smaller drying liquid fog particles to pass into the wafer bath vessel.

Abstract translation: 一种晶片干燥器和方法，其特征在于雾化器发射加压的干燥液体流，其与相对的加压非反应性载气流收敛以产生干燥液体雾。 加压的非反应性气体喷射装置部分地设置在桶内，部分地设置在容纳要干燥的晶片的晶片槽容器内。 桶具有用于允许干燥液雾进入晶片浴容器的通气口，以粘附到暴露的晶片表面，并将剩余的液体置于晶片表面上，从而干燥晶片。 浴缸还可以包括用于排出未转化为雾或已冷凝的干燥液体的排水口。 排气口还可以包括用于保持更大的干燥液雾颗粒的装置，其允许较小的干燥液雾颗粒进入晶片浴容器。

公开(公告)号：US06180524B2

公开(公告)日：2001-01-30

申请号：US09371296

申请日：1999-08-09

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: C25D502

CPC classification number: H01L21/2885 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1844 ,  C23C18/40 ,  C25D5/54 ,  C25D7/123 ,  H01L21/288

Abstract: Method and system for controllable deposit of copper onto an exposed surface of a workpiece, such as a semiconductor surface. A seed thickness of copper is optionally deposited onto the exposed surface, preferably using oxygen-free liquid ammonia to enhance this deposition. The workpiece exposed surface is then immersed in an electroplating solution, including copper and liquid ammonia at a suitable pressure and temperature, and copper is caused to plate onto the exposed surface at a controllable rate. When the copper deposited on the exposed surface reaches a selected total thickness, electroplating is discontinued, the electroplating solution is removed, and the gaseous and liquid ammonia are recovered and recycled for re-use.

Abstract translation: 铜可控制地沉积到诸如半导体表面的工件的暴露表面上的方法和系统。 任选地将铜的种子厚度沉积到暴露的表面上，优选使用无氧液氨来增强该沉积。 然后将工件暴露表面在合适的压力和温度下浸入包括铜和液氨的电镀溶液中，并以可控的速率将铜板印刷在暴露的表面上。 当沉积在暴露表面上的铜达到所选择的总厚度时，停止电镀，除去电镀溶液，回收气态和液态氨并重新利用。

公开(公告)号：US5974689A

公开(公告)日：1999-11-02

申请号：US34369

申请日：1998-03-03

Applicant: Gary W. Ferrell ,  Robert J. Elson ,  John F. Schipper

Inventor： Gary W. Ferrell ,  Robert J. Elson ,  John F. Schipper

IPC: B08B3/04 ,  B08B3/08 ,  B08B3/12 ,  C11D7/50 ,  C11D11/00 ,  C23G5/02 ,  C23G5/04 ,  H01L21/00 ,  H01L21/02 ,  H05K3/26 ,  F26B3/00

CPC classification number: H01L21/6704 ,  B08B3/04 ,  B08B3/08 ,  B08B3/12 ,  C11D11/0041 ,  C11D7/5063 ,  C23G5/02 ,  C23G5/04 ,  H01L21/02052 ,  H01L21/67034 ,  H05K3/26

Abstract: Method and apparatus for drying and/or cleaning a workpiece, such as an electronic part, semiconductor wafer, printed circuit board or the like. As the workpiece is withdrawn from a processing liquid, a selected drying liquid, such as hydrofluoroether (HFE) or an HFE azeotrope, that has a very small surface tension, is volatile, and has a density that is greater than the processing liquid density, is sprayed on, dribbled on or otherwise transferred to an exposed surface of the workpiece. The workpiece can be dried in 7-45 seconds, or less, in most situations and can be cleaned using the invention. Drying and/or cleaning can be performed in a single workpiece process, a single workpiece continuous process or a batch process.

Abstract translation: 用于干燥和/或清洁工件的方法和装置，例如电子部件，半导体晶片，印刷电路板等。 当工件从处理液体中取出时，具有非常小的表面张力的所选干燥液体如氢氟醚（HFE）或HFE共沸物是挥发性的，并且具有大于加工液体密度的密度， 被喷涂，运送或以其他方式转移到工件的暴露表面。 在大多数情况下，工件可以在7-45秒或更短的时间内干燥，并且可以使用本发明进行清洁。 干燥和/或清洁可以在单个工件工艺，单个工件连续工艺或间歇工艺中进行。

公开(公告)号：US5968285A

公开(公告)日：1999-10-19

申请号：US90453

申请日：1998-06-04

Applicant: Gary W. Ferrell ,  Thomas D. Spencer ,  Rob E. Carter

Inventor： Gary W. Ferrell ,  Thomas D. Spencer ,  Rob E. Carter

IPC: B08B3/10 ,  B08B3/12 ,  F26B5/00 ,  F26B21/14 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/102 ,  B08B3/12 ,  F26B21/145 ,  F26B5/005 ,  H01L21/67028 ,  Y10S134/902

Abstract: Methods for cleaning and/or drying objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces, possibly by a "chemical squeegeeing" effect. Surface contaminants are also removed by this process which may be performed at about room temperature. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber. Inert gas flow is employed to provide aerosol particles of smaller size and/or with greater dispersion within the chamber. Continuous filtering and shunt filtering are employed to remove most contaminants from the selected liquid. A flow deflector redirects initial flow of the selected liquid to a supplementary filter, to remove most of the contaminant particle "spike" that appears when a system is first (re)activated. An improved surface for aerosol particle production is provided.

Abstract translation: 在制造过程中清洁和/或干燥可能被弄湿或污染的物体的方法。 物体被浸没在封闭室中的漂洗液中，并且来自选择的液体的气溶胶颗粒被引入冲洗液体表面上方的室中，在该表面上形成薄膜。 当漂洗液体缓慢排出时，一些气溶胶颗粒沉积在物体的暴露表面上，并可能通过“化学刮涂”效应从暴露的表面置换和去除漂洗液体残留物。 表面污染物也可以通过该方法除去，这可以在大约室温下进行。 当冲洗液体从室排出时，室压力保持在或接近外部环境压力。 使用惰性气体流动来提供在室内更小尺寸和/或更大分散的气溶胶颗粒。 采用连续过滤和分流过滤从所选择的液体中除去大多数污染物。 导流器将所选择的液体的初始流动重定向到补充过滤器，以去除系统首次（再次）激活时出现的大部分污染物颗粒“尖峰”。 提供了用于气溶胶颗粒生产的改进的表面。

公开(公告)号：US5685086A

公开(公告)日：1997-11-11

申请号：US616165

申请日：1996-03-14

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/10 ,  B08B3/12 ,  F26B5/00 ,  F26B21/14 ,  H01L21/00 ,  H01L21/306 ,  F26B19/00

CPC classification number: B08B3/102 ,  B08B3/12 ,  F26B21/145 ,  F26B5/005 ,  H01L21/02052 ,  H01L21/67028

Abstract: Method and apparatus for drying objects that may have been wetted in a manufacturing The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected drying liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto and form a film on the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces. Surface contaminants are also removed by this process.

Abstract translation: 用于干燥可能在制造中被润湿的物体的方法和设备将物体浸没在封闭室中的冲洗液体中，并且将来自选择的干燥液体的气溶胶颗粒引入冲洗液体表面上方的室中，形成薄膜 在这个表面上。 当漂洗液体缓慢排出时，一些气溶胶颗粒沉积在物体的暴露表面上并形成膜，并从暴露的表面置换和去除漂洗液体残留物。 表面污染物也可以通过这种方法去除。

公开(公告)号：US4539052A

公开(公告)日：1985-09-03

申请号：US600355

申请日：1984-04-16

Applicant: David N. Palmer ,  Gary W. Ferrell

Inventor： David N. Palmer ,  Gary W. Ferrell

IPC: C23C8/62 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/58 ,  B05D5/12

CPC classification number: H01M4/136 ,  C23C8/62 ,  H01M4/1397 ,  H01M4/581 ,  H01M4/5815 ,  Y02P70/54

Abstract: A composite cathode active material/current collector product useable as a component of a cathode for secondary batteries without the need for a separate current collector, which comprises a wire having a conductive interior portion of a transition metal and an exterior portion of an intercalatable layered transition metal chalcogenide, is made by a method which involves reacting a transition metal wire with a vapor of a chalcogen or a hydrogen chalcogenide.

Abstract translation: 一种复合阴极活性材料/集电器产品，其可用作二次电池的阴极组件，而不需要单独的集电器，该集电器包括具有过渡金属的导电内部部分和可插入分层过渡部分的外部部分的导线 金属硫族化物是通过使过渡金属线与硫族元素或氢硫族化合物的蒸汽反应的方法制备的。

公开(公告)号：US4416915A

公开(公告)日：1983-11-22

申请号：US345605

申请日：1982-02-04

Applicant: David N. Palmer ,  Gary W. Ferrell

Inventor： David N. Palmer ,  Gary W. Ferrell

IPC: H01M4/02 ,  H01M4/58 ,  H01M4/62 ,  H01M4/66 ,  B05D5/12

CPC classification number: H01M4/581 ,  H01M4/02 ,  H01M4/621 ,  H01M4/624 ,  H01M4/66 ,  H01M4/661 ,  H01M4/663 ,  H01M4/664 ,  H01M4/625

Abstract: A chalcogenide cathode is made by applying a slurry of a mixture containing at least one intercalatable layered transition metal chalcogenide cathode active material, a conductivity enhancing agent and a binding agent in a vehicle therefor to a high porosity current collector substrate which has been previously treated by applying and drying an adhesion promoting agent thereon and then heating the substrate in an inert atmosphere to drive off the vehicle and coalesce the binding agent.

Abstract translation: 通过将载体中含有至少一种可嵌入的层状过渡金属硫属化物阴极活性材料，导电性增强剂和粘合剂的混合物的淤浆施加到高孔隙率集电器基板上来制备硫族化物阴极，该基板先前已经被 在其上施加和干燥粘合促进剂，然后在惰性气氛中加热基底以驱除车辆并聚结粘合剂。