公开(公告)号：US20150041898A1

公开(公告)日：2015-02-12

申请号：US13964009

申请日：2013-08-09

Applicant: GLOBALFOUNDRIES Inc. ,  STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Prasanna Khare ,  Jin Cho

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L29/785

Abstract: Methods and structures for forming fully insulated finFETs beginning with a bulk semiconductor substrate are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first epitaxial layer may be sacrificial. A final gate structure may be formed around the fin structures, and the first epitaxial layer removed to form a void between a fin and the substrate. The void may be filled with an insulator to fully insulate the fin.

Abstract translation: 描述了以体半导体衬底开始形成完全绝缘的finFET的方法和结构。 用于finFET的鳍结构可以形成在生长在块状衬底上的两个外延层中。 第一外延层可以是牺牲的。 可以在翅片结构周围形成最终的栅极结构，并且去除第一外延层以在翅片和衬底之间形成空隙。 空隙可以填充绝缘体以使翅片完全绝缘。

公开(公告)号：US09570318B1

公开(公告)日：2017-02-14

申请号：US14805527

申请日：2015-07-22

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Jin Cho ,  MiaoMiao Wang ,  Hui Zang

IPC: H01L27/088 ,  H01L21/321 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/28

CPC classification number: H01L29/513 ,  H01L21/28026 ,  H01L21/324 ,  H01L29/41791 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

Abstract translation: 实施例涉及一种形成鳍型场效应晶体管（FinFET）的部分的方法。 该方法包括形成至少一个翅片，并且在至少一个翅片的至少一部分上形成电介质层。 该方法还包括在电介质层的至少一部分上形成功函数层。 所述方法还包括形成与所述至少一个鳍片相邻的源极区域或漏极区域，以及执行退火操作，其中所述退火操作使所述电介质层和所述源极区域或所述漏极区域退火，并且其中所述功函数层提供 在退火操作期间到介电层的至少一部分的保护功能。

公开(公告)号：US09159633B2

公开(公告)日：2015-10-13

申请号：US14026172

申请日：2013-09-13

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Tenko Yamashita ,  Chun-Chen Yeh ,  Jin Cho ,  Hui Zang

IPC: H01L23/58 ,  H01L29/10 ,  H01L21/66 ,  H01L21/8234

CPC classification number: H01L22/14 ,  G03F7/70466 ,  H01L21/823431 ,  H01L22/10 ,  H01L22/12 ,  H01L22/34

Abstract: A method for forming an integrated circuit having a test macro using a multiple patterning lithography process (MPLP) is provided. The method includes forming an active area of the test macro having a first and second gate region and forming a first and second source/drain regions in the active area. The method also includes forming a first contact connected to the first gate region, a second contact connected to the second gate region, a third contact connected to the first source/drain region, and a forth contact connected to the source/drain region. The method further includes determining if an overlay shift has occurred during the formation of the active area by testing for a short between one or more of the first contact, the second contact, the third contact, or the fourth contact.

Abstract translation: 提供了一种使用多重图案化光刻工艺（MPLP）形成具有测试宏的集成电路的方法。 该方法包括形成具有第一和第二栅极区的测试宏的有源区，并在有源区中形成第一和第二源极/漏极区。 该方法还包括形成连接到第一栅极区域的第一触点，连接到第二栅极区域的第二触点，连接到第一源极/漏极区域的第三触点和连接到源极/漏极区域的第四触点。 该方法还包括通过测试第一接触，第二接触，第三接触或第四接触中的一个或多个之间的短路来确定在形成有源区域期间是否发生覆盖偏移。

公开(公告)号：US09041087B2

公开(公告)日：2015-05-26

申请号：US14288034

申请日：2014-05-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Yuan ,  Jin Cho ,  Jongwook Kye

IPC: H01L29/66 ,  H01L23/48 ,  H01L21/4763 ,  H01L29/423 ,  H01L23/485 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/78

CPC classification number: H01L29/4232 ,  H01L21/76834 ,  H01L21/76888 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/485 ,  H01L29/66477 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor device structures are provided. An exemplary semiconductor device structure includes a substrate of a semiconductor material and a gate structure overlying the substrate. The semiconductor substrate further includes a doped region formed in the substrate proximate the gate structure and a first dielectric material overlying the doped region. The semiconductor substrate also includes a conductive contact formed in the first dielectric material, the conductive contact being electrically connected to the doped region, and a dielectric cap overlying the conductive contact.

Abstract translation: 提供半导体器件结构。 示例性的半导体器件结构包括半导体材料的衬底和覆盖衬底的栅极结构。 半导体衬底还包括形成在靠近栅极结构的衬底中的掺杂区域和覆盖掺杂区域的第一电介质材料。 半导体衬底还包括形成在第一电介质材料中的导电触点，导电触点电连接到掺杂区域，以及覆盖在导电触点上的电介质盖。

公开(公告)号：US08716094B1

公开(公告)日：2014-05-06

申请号：US13682769

申请日：2012-11-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chang Seo Park ,  Linus Jang ,  Jin Cho

IPC: H01L21/336 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/311

CPC classification number: H01L29/66742 ,  H01L29/66795

Abstract: Approaches for forming a FinFET device using double patterning memorization techniques are provided. Specifically, a device will initially be formed by defining a set of fins, depositing a poly-silicon layer, and depositing a hardmask. Thereafter, a front end of the line (FEOL) lithography-etch, lithography-etch (LELE) process will be performed to form a set of trenches in the device. The set of trenches will be filled with an oxide layer that is subsequently polished. Thereafter, the device is selectively etched to yield a (e.g., poly-silicon) gate pattern.

Abstract translation: 提供了使用双重图案记忆技术形成FinFET器件的方法。 具体来说，首先将通过限定一组翅片，沉积多晶硅层和沉积硬掩模来形成器件。 此后，将执行线的前端（FEOL）光刻蚀刻，光刻蚀刻（LELE）处理以在器件中形成一组沟槽。 该组沟槽将填充随后抛光的氧化物层。 此后，选择性地蚀刻器件以产生（例如，多晶硅）栅极图案。