公开(公告)号：US11828984B2

公开(公告)日：2023-11-28

申请号：US17679431

申请日：2022-02-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Theodore Letavic ,  Yusheng Bian ,  Hemant Dixit

IPC: G02B6/122 ,  G02B6/12

CPC classification number: G02B6/1228 ,  G02B2006/12135

Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a substrate, an optical component including a waveguide core, and a back-end-of-line stack including a heat spreader layer. The optical component is positioned in a vertical direction between the substrate and the back-end-of-line stack. The waveguide core contains a first material having a first thermal conductivity, and the heat spreader layer contains a second material having a second thermal conductivity that is greater than the first thermal conductivity of the first material.

公开(公告)号：US20230266530A1

公开(公告)日：2023-08-24

申请号：US17679470

申请日：2022-02-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Hemant Dixit ,  Theodore Letavic

IPC: G02B6/122 ,  G02B6/13

CPC classification number: G02B6/122 ,  G02B6/13 ,  G02B2006/12135

Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes an optical component having a waveguide core, and multiple features positioned adjacent to the waveguide core. The waveguide core contains a first material having a first thermal conductivity, and the features contain a second material having a second thermal conductivity that is greater than the first thermal conductivity.

公开(公告)号：US11682514B2

公开(公告)日：2023-06-20

申请号：US16997065

申请日：2020-08-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane

IPC: H01F10/32 ,  H10B61/00 ,  H10N50/80 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3254 ,  H01F10/329 ,  H01F10/3286 ,  H10B61/00 ,  H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

公开(公告)号：US20220059754A1

公开(公告)日：2022-02-24

申请号：US16997065

申请日：2020-08-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01F10/32

Abstract: An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

公开(公告)号：US20210359000A1

公开(公告)日：2021-11-18

申请号：US15930577

申请日：2020-05-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant Dixit ,  Vinayak Bharat Naik

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01L43/02 ,  H01L43/12 ,  H01F41/34

Abstract: One illustrative MRAM cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) element positioned above the bottom electrode and below the top electrode. In this example, the MTJ element includes a bottom insulation layer positioned above the bottom electrode, a top insulation layer positioned above the bottom electrode; and a first ferromagnetic material layer positioned between the bottom insulation layer and the top insulation layer.

公开(公告)号：US11009525B1

公开(公告)日：2021-05-18

申请号：US15931792

申请日：2020-05-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jay Mody ,  Hemant Dixit

IPC: G01R1/067 ,  G01R31/28 ,  G01N27/22 ,  G01B11/28

Abstract: An illustrative system disclosed herein includes a conductive probe that is adapted to hold a quantity of mercury, wherein the conductive probe includes a conductive body with an outlet and a mercury control system adapted to supply mercury to the conductive probe. In this example, the system also includes an image sensor that is adapted to obtain an image of a mercury droplet positioned on a surface of a material and a measurement system that is adapted to receive the image of the mercury droplet and calculate a contact area between the mercury droplet and the surface of the material based upon the image of the mercury droplet.