公开(公告)号：US09594022B2

公开(公告)日：2017-03-14

申请号：US14836795

申请日：2015-08-26

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Zhiyong Li ,  R. Stanley Williams

IPC: G01N21/76 ,  G01N21/64 ,  G01N21/65 ,  G01N33/543

CPC classification number: G01N21/6428 ,  G01N21/648 ,  G01N21/658 ,  G01N33/54373

Abstract: A chemical-analysis device integrated with a metallic-nanofinger device for chemical sensing. The chemical-analysis device includes a metallic-nanofinger device, and a platform. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with at least one analyte molecule. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A method for using, and a chemical-analysis apparatus including the chemical-analysis device are also provided.

Abstract translation: 与用于化学感测的金属纳米酮装置集成的化学分析装置。 化学分析装置包括金属纳米装置和平台。 金属纳米装置包括衬底和与衬底耦合的多个纳米器件。 多个纳米针板包括柔性柱和联接到柔性柱的顶点的金属帽。 至少纳米角蛋白和多个纳米针的第二纳米角键将与至少一个分析物分子自组织成紧密堆积的构型。 金属帽的形态是产生与来自分析物分子的放大发光相关的移位等离子体共振峰。 还提供了一种使用方法和包括该化学分析装置的化学分析装置。

公开(公告)号：US20160043312A1

公开(公告)日：2016-02-11

申请号：US14775811

申请日：2013-03-13

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jianhua Yang ,  Minxian Max Zhang ,  Gilberto Medeiros Ribeiro ,  R. Stanley Williams

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1641

Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.

Abstract translation: 具有掺杂剂补偿开关的忆阻器，具有底电极的忆阻器，顶电极和夹在底电极和顶电极之间的有源区。 有源区由电绝缘材料和导电材料构成。 绝缘材料包括补偿掺杂剂以部分或完全补偿绝缘材料中的天然掺杂剂。 制作忆阻器的方法也被披露。

公开(公告)号：US20160028005A1

公开(公告)日：2016-01-28

申请号：US14871156

申请日：2015-09-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Minxian Max Zhang ,  Jianhua Yang ,  R. Stanley Williams

IPC: H01L45/00

CPC classification number: H01L45/1658 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/1608

Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.

Abstract translation: 公开了一种包括掺杂剂源的忆阻器。 该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子 开关材料。 还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

公开(公告)号：US20130234103A1

公开(公告)日：2013-09-12

申请号：US13867335

申请日：2013-04-22

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jianhua Yang ,  R. Stanley Williams ,  Gilberto Medeiros Ribeiro

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625

Abstract: Nanoscale switching devices are disclosed. The devices have a first electrode of a nanoscale width; a second electrode of a nanoscale width; and a layer of an active region disposed between and in electrical contact with the first and second electrodes. The active region contains a switching material capable of carrying a significant amount of defects which can trap and de-trap electrons under electrical bias. The switching material is in an amorphous state. A nanoscale crossbar array containing a plurality of the devices and a method for making the devices are also disclosed.

Abstract translation: 公开了纳米级开关器件。 器件具有纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间并与之电接触的有源区的层。 有源区域包含能承载大量缺陷的开关材料，其可以在电偏压下捕获和去除电子。 开关材料处于非晶状态。 还公开了一种包含多个器件的纳米级交叉开关阵列和用于制造器件的方法。

公开(公告)号：US10056142B2

公开(公告)日：2018-08-21

申请号：US15515317

申请日：2014-10-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Jianhua Yang ,  Zhiyong Li ,  R. Stanley Williams

IPC: G11C15/00 ,  G11C13/00 ,  G11C7/10 ,  G11C15/04

CPC classification number: G11C13/004 ,  G11C7/1006 ,  G11C7/24 ,  G11C8/12 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0023 ,  G11C15/046

Abstract: A device for generating a representative logic indicator of grouped memristors is described. The device includes a memristor array. The memristor array includes a number of first memristors having a first set of logic indicators and a number of second memristors having a second set of logic indicators. The second set of logic indicators is different than the first set of logic indicators. Each first memristor is grouped with a corresponding second memristor during a memory read operation to generate a representative logic indicator.

公开(公告)号：US10162263B2

公开(公告)日：2018-12-25

申请号：US15547105

申请日：2015-04-27

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Zhiyong Li ,  Jianhua Yang ,  R. Stanley Williams

IPC: H01L27/00 ,  H01L45/00 ,  G03F7/16 ,  G11C13/00 ,  G11C19/28 ,  B41J2/045 ,  B41J2/14 ,  H01L27/108 ,  H01L49/02 ,  H01L27/24

Abstract: An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.

公开(公告)号：US20150380643A1

公开(公告)日：2015-12-31

申请号：US14845735

申请日：2015-09-04

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R. Stanley Williams

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/08 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/55 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149

Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

Abstract translation: 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。 在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道的导电性 费米玻璃材料。