公开(公告)号：US20160379896A1

公开(公告)日：2016-12-29

申请号：US15050631

申请日：2016-02-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Masahiro SUMIYA

IPC: H01L21/66

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Abstract translation: 在通过产生等离子体对样品进行等离子体处理时的等离子体发光的时间序列数据中，分析装置在等离子体处理间隔内产生多个元件的发光波长和多个时间间隔的组合， 针对波长和时间间隔的每个组合计算发光强度的平均值和对波长的每个组合的样本对等离子体处理执行的次数与时间的相关性 已创建的间隔。 此后，数据分析装置选择用于观察或控制等离子体处理的波长和时间间隔的组合，从特定元素发射的光的波长与具有最大相关性的特定时间间隔的组合。

公开(公告)号：US20140022540A1

公开(公告)日：2014-01-23

申请号：US13945285

申请日：2013-07-18

Applicant: Hitachi High -Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Toshio MASUDA

IPC: G01J1/42

CPC classification number: G01J1/42 ,  G01J3/443 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972

Abstract: Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber.

Abstract translation: 在多个OES数据波长中，分析装置通过以下步骤来识别来自腔室内的多个发光波长的等离子体中包含的物质的光发射的波长：在蚀刻处理期间测量腔室内的光发射 半导体晶片; 发现由于室内光发射强度的每个波长随时间的变化引起的时间波动; 比较从预先指定的物质发射的光的波长的基于时间的波动; 并且通过使用比较结果，识别由室内的发光引起的从物质发射的光的波长。

公开(公告)号：US20200066500A1

公开(公告)日：2020-02-27

申请号：US16666842

申请日：2019-10-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Masahiro SUMIYA

IPC: H01J37/32

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

公开(公告)号：US20190221407A1

公开(公告)日：2019-07-18

申请号：US16123208

申请日：2018-09-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shota UMEDA ,  Keita NOGI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01J37/32 ,  G01J3/443 ,  H01L21/67

CPC classification number: H01J37/32926 ,  G01J3/443 ,  H01J37/32972 ,  H01L21/67253

Abstract: Provided is a plasma processing apparatus including a processing unit in which a sample is plasma processed and which includes a monitor (optical emission spectroscopy) that monitors light emission of plasma, wherein the processing unit includes a prediction model storage unit that stores a prediction model predicting a plasma processing result, and a control device in which the plasma processing result is predicted by using a prediction model selected based on light emission data and device data as an indicator of state change of the processing unit.

公开(公告)号：US20190100840A1

公开(公告)日：2019-04-04

申请号：US16207434

申请日：2018-12-03

Applicant: Hitachi High-Technologies Corporation

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Yuji NAGATANI

IPC: C23C16/52 ,  H01J37/32 ,  C23C16/50

Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

公开(公告)号：US20170230271A1

公开(公告)日：2017-08-10

申请号：US15248113

申请日：2016-08-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Yuji NAGATANI

IPC: H04L12/26 ,  H04L29/08

CPC classification number: H04L43/14 ,  H04L41/0672 ,  H04L43/0817 ,  H04L67/10

Abstract: A data management apparatus according to an embodiment of the present invention includes a data analyzing unit that processes operation data transferred from a data collecting unit that collects the operation data of a semiconductor manufacturing apparatus, and a state monitoring unit that monitors a state of the data analyzing unit based on monitoring time. The monitoring time is the sum of first time that is time required for transferring the operation data to the data analyzing unit and second time that is time required for processing the operation data in the data analyzing unit.

公开(公告)号：US20160225681A1

公开(公告)日：2016-08-04

申请号：US14825098

申请日：2015-08-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/3065 ,  G01N21/68 ,  H01L21/67

CPC classification number: G01N21/68 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/67253

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Abstract translation: 等离子体处理装置，等离子体处理方法和等离子体处理分析方法，其中在用于光谱测量数据的波长，时间间隔和可变参数中确定用于改变蚀刻条件的用于控制的波长，时间间隔和蚀刻条件参数的适当组合 以确保稳定的蚀刻条件。 具体地说，对于波长，时间间隔和蚀刻条件参数的两种以上的组合中的每一种，获得代表波长和时间间隔的发光强度与蚀刻相关性的回归方程。 此外，对于每个组合，当为蚀刻条件参数设定的值改变时，根据回归方程计算出变化量。 在组合中，将变化量最小的组合确定为用于控制的波长，时间间隔和改变的蚀刻条件参数的组合。