公开(公告)号：US20200066500A1

公开(公告)日：2020-02-27

申请号：US16666842

申请日：2019-10-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Masahiro SUMIYA

IPC: H01J37/32

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

公开(公告)号：US20160225681A1

公开(公告)日：2016-08-04

申请号：US14825098

申请日：2015-08-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/3065 ,  G01N21/68 ,  H01L21/67

CPC classification number: G01N21/68 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/67253

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Abstract translation: 等离子体处理装置，等离子体处理方法和等离子体处理分析方法，其中在用于光谱测量数据的波长，时间间隔和可变参数中确定用于改变蚀刻条件的用于控制的波长，时间间隔和蚀刻条件参数的适当组合 以确保稳定的蚀刻条件。 具体地说，对于波长，时间间隔和蚀刻条件参数的两种以上的组合中的每一种，获得代表波长和时间间隔的发光强度与蚀刻相关性的回归方程。 此外，对于每个组合，当为蚀刻条件参数设定的值改变时，根据回归方程计算出变化量。 在组合中，将变化量最小的组合确定为用于控制的波长，时间间隔和改变的蚀刻条件参数的组合。

公开(公告)号：US20180025894A1

公开(公告)日：2018-01-25

申请号：US15445203

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  G01J3/28

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

公开(公告)号：US20150083328A1

公开(公告)日：2015-03-26

申请号：US14303636

申请日：2014-06-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01L21/66 ,  G01J3/443 ,  H01L21/67

CPC classification number: H01J37/3299 ,  B81C2201/0132 ,  H01J37/32926 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31138 ,  H01L21/67069

Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

Abstract translation: 提供了一种分析从使用等离子体微加工晶片的蚀刻装置获得的数据的方法。 该方法包括以下步骤：获取指示多个不同波长和时间的发光强度的等离子体发光数据，等离子体发光数据在多个不同的蚀刻处理条件下测量，并且在 蚀刻处理的时间，评估蚀刻处理条件的变化与多个不同波长和时间相对于等离子体发光数据的波长和时间的发光强度的变化之间的关系，以及识别 基于评估结果的波长和等离子体发光数据的时间，用于调整蚀刻处理条件的波长和时间。

公开(公告)号：US20160203957A1

公开(公告)日：2016-07-14

申请号：US15074204

申请日：2016-03-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G01J3/28 ,  G01J3/443 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67253

Abstract: A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

Abstract translation: 通过指定波长和时间间隔的组合，在较早的阶段实现了稳定的蚀刻工艺，其在短时间段内呈现蚀刻处理结果的最小预测误差。 为此，波长和时间间隔的组合是从样品蚀刻时产生的等离子体发射的波长带产生的，对于波长和时间间隔的每个组合，波长组合计算蚀刻处理结果预测的预测误差 基于所计算的预测误差来指定预测误差，通过改变相对于指定波长组合的时间间隔来进一步计算预测误差，并且将表示计算出的预测误差的最小值的波长和时间间隔的组合选择为 波长和用于预测蚀刻处理过程的时间间隔。

公开(公告)号：US20140262029A1

公开(公告)日：2014-09-18

申请号：US14023831

申请日：2013-09-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Kenji TAMAKI

IPC: H01L21/66 ,  H01L21/67 ,  G01J3/443

CPC classification number: G01J3/443 ,  G01N21/68 ,  H01J37/32972 ,  H01J2237/334

Abstract: An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.

Abstract translation: 蚀刻装置从蚀刻处理期间的由发光分光器测定的发光的信息的信息中计算出特定元素应发光的多个波长中的每一个附近的发光强度，如果确定计算出的 存储在存储单元中的发光强度信息和发光强度信息相似，以与元件相关联的波长提取对应于计算的发射强度的波长。

公开(公告)号：US20190170653A1

公开(公告)日：2019-06-06

申请号：US16272354

申请日：2019-02-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: G01N21/68 ,  H01J37/32

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

公开(公告)号：US20160020123A1

公开(公告)日：2016-01-21

申请号：US14625855

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01L21/67 ,  H01J37/32 ,  G01J3/443

CPC classification number: H01J37/32926 ,  G01J3/28 ,  G01J3/443 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67253

Abstract: A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

公开(公告)号：US20190051502A1

公开(公告)日：2019-02-14

申请号：US15892041

申请日：2018-02-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Shota UMEDA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US20160379896A1

公开(公告)日：2016-12-29

申请号：US15050631

申请日：2016-02-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Masahiro SUMIYA

IPC: H01L21/66

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Abstract translation: 在通过产生等离子体对样品进行等离子体处理时的等离子体发光的时间序列数据中，分析装置在等离子体处理间隔内产生多个元件的发光波长和多个时间间隔的组合， 针对波长和时间间隔的每个组合计算发光强度的平均值和对波长的每个组合的样本对等离子体处理执行的次数与时间的相关性 已创建的间隔。 此后，数据分析装置选择用于观察或控制等离子体处理的波长和时间间隔的组合，从特定元素发射的光的波长与具有最大相关性的特定时间间隔的组合。