公开(公告)号：US09653178B2

公开(公告)日：2017-05-16

申请号：US15133452

申请日：2016-04-20

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yinyin Lin ,  Zhulin Wei ,  Junfeng Zhao ,  Wei Yang ,  Yarong Fu ,  Kai Yang

IPC: G11C11/15 ,  G11C19/08

CPC classification number: G11C19/0841 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0808

Abstract: A storage device, a memory, and a method for controlling a storage device, where the storage device includes a comb-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port, where the comb-shaped magnetic track includes a first storage area, a second storage area, and a comb handle, and the first storage area and the second storage area include more than two memory bars.

公开(公告)号：US20160232984A1

公开(公告)日：2016-08-11

申请号：US15133452

申请日：2016-04-20

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yinyin Lin ,  Zhulin Wei ,  Junfeng Zhao ,  Wei Yang ,  Yarong Fu ,  Kai Yang

IPC: G11C19/08

CPC classification number: G11C19/0841 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0808

Abstract: A storage device, a memory, and a method for controlling a storage device, where the storage device includes a comb-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port, where the comb-shaped magnetic track includes a first storage area, a second storage area, and a comb handle, and the first storage area and the second storage area include more than two memory bars.

Abstract translation: 一种用于控制存储装置的存储装置，存储器和方法，其中存储装置包括梳状磁迹，第一驱动电路，第二驱动电路，第一驱动端口和第二驱动端口，其中 梳状磁道包括第一存储区域，第二存储区域和梳子手柄，并且第一存储区域和第二存储区域包括两个以上的存储器条。

公开(公告)号：US09741418B2

公开(公告)日：2017-08-22

申请号：US15333235

申请日：2016-10-25

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yarong Fu ,  Junfeng Zhao ,  Yuangang Wang ,  Wei Yang ,  Yinyin Lin ,  Kai Yang

IPC: G11C5/02 ,  G11C19/08 ,  G11C11/16 ,  G11B5/65 ,  G11B5/012

CPC classification number: G11C11/1675 ,  G11B5/012 ,  G11B5/653 ,  G11B5/656 ,  G11C11/16 ,  G11C19/0841

Abstract: A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.

公开(公告)号：US20170133074A1

公开(公告)日：2017-05-11

申请号：US15406209

申请日：2017-01-13

Applicant: Huawei Technologies Co., Ltd.

Inventor： Kai Yang ,  Junfeng Zhao ,  Yuangang Wang ,  Wei Yang ,  Yinyin Lin ,  Yarong Fu

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C19/0808 ,  G11C19/0841 ,  G11C19/0866

Abstract: A magnetic storage apparatus is disclosed, and is configured to access data. The magnetic storage apparatus includes a magnetic storage track, a first write apparatus, a second write apparatus, and a drive apparatus. The first write apparatus and the second write apparatus are located at different positions on the magnetic storage track. The first write apparatus is configured to write first data “0” or second data “1”. The second write apparatus is configured to write third data “2” and fourth data “3”.

公开(公告)号：US20160203835A1

公开(公告)日：2016-07-14

申请号：US15078594

申请日：2016-03-23

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yinyin Lin ,  Yarong Fu ,  Kai Yang ,  Wei Yang ,  Yuangang Wang ,  Junfeng Zhao

IPC: G11B5/09

CPC classification number: G11B5/09 ,  G11B5/02 ,  G11B2005/0002 ,  G11C11/02 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/0808 ,  G11C19/0841

Abstract: An information storage apparatus includes a magnetic track, a writer, and a reader, where the magnetic track includes a number of magnetic domains. Each magnetic domain is divided into at least two magnetic regions, and the writer is disposed on the magnetic track, and configured to write information to the at least two magnetic regions of each magnetic domain. The reader, disposed on the magnetic track, is configured to read the written information from the at least two magnetic regions. Therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, thereby increasing storage density of the magnetic track, and expanding a storage capacity of the storage apparatus.

Abstract translation: 信息存储装置包括磁道，写入器和读取器，其中磁道包括多个磁畴。 每个磁畴被分成至少两个磁性区域，并且写入器设置在磁道上，并被配置为将信息写入每个磁畴的至少两个磁性区域。 设置在磁道上的读取器被配置为从至少两个磁性区域读取写入的信息。 因此，将多条有效信息写入磁道的一个磁畴，从而增加磁道的存储密度，并扩大存储装置的存储容量。

公开(公告)号：US20170018306A1

公开(公告)日：2017-01-19

申请号：US15121101

申请日：2014-09-17

Applicant: FUDAN UNIVERSITY

Inventor： Yinyin Lin ,  Ying Meng

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0066 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

Abstract: The invention provides a resistive random access memory and a writing operation method thereof, and pertains to the technical field of resistive random access memory (ReRAM). The resistive random access memory comprises a writing operation signal generation module which is at least used for generating electrical signal(s) hazing gradually reducing voltages as set operation signals; in a Set operation method of the writing operation method, electrical signal(s) hazing gradually reducing voltages are biased, as Set operation signals, onto a selected memory unit in the resistive random access memory. The Set operation method can improve storage performances of ReRAM in terms of endurance, data retention and high resistance/low resistance window, etc.

Abstract translation: 本发明提供一种电阻随机存取存储器及其写入操作方法，并且涉及电阻随机存取存储器（ReRAM）的技术领域。 所述电阻随机存取存储器包括一写入操作信号产生模块，该模块至少用于产生逐渐减小电压的电信号作为设置操作信号; 在写入操作方法的设置操作方法中，将电信号逐渐减小的电压作为设置操作信号偏置到电阻随机存取存储器中的选定的存储器单元上。 设置操作方法可以提高ReRAM在耐久性，数据保留性和高电阻/低电阻窗口等方面的存储性能。