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公开(公告)号：US20070007609A1
公开(公告)日：2007-01-11
申请号：US11368383
申请日：2006-03-07
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。
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公开(公告)号：US08310862B2
公开(公告)日：2012-11-13
申请号：US12481726
申请日：2009-06-10
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。
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公开(公告)号：US08217438B2
公开(公告)日：2012-07-10
申请号：US12851072
申请日：2010-08-05
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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公开(公告)号：US20120168838A1
公开(公告)日：2012-07-05
申请号：US13419947
申请日：2012-03-14
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/66984 , H01L21/823814 , H01L21/84 , H01L21/845 , H01L29/41766 , H01L29/456 , H01L29/49 , H01L29/66075
摘要： A semiconductor device according to an embodiment includes: a semiconductor layer; source and drain regions in the semiconductor layer; a magnetic metal semiconductor compound film on each of the source and drain regions, the magnetic metal semiconductor compound film including the same semiconductor as a semiconductor of the semiconductor layer and a magnetic metal; a gate insulating film on the semiconductor layer between the source region and the drain region; a gate electrode on the gate insulating film; a gate sidewall formed at a side portion of the gate electrode, the gate sidewall being made of an insulating material; a film stack formed on the magnetic metal semiconductor compound film on each of the source and drain regions, the film stack including a magnetic layer; and an oxide layer formed on the gate sidewall, the oxide layer containing the same element as an element in the film stack.
摘要翻译： 根据实施例的半导体器件包括：半导体层; 半导体层中的源极和漏极区域; 在源极和漏极区域中的每一个上的磁性金属半导体化合物膜，包括与半导体层的半导体相同的半导体的磁性金属半导体化合物膜和磁性金属; 源极区域和漏极区域之间的半导体层上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 栅极侧壁，其形成在所述栅电极的侧部，所述栅极侧壁由绝缘材料制成; 在所述源极和漏极区域中的每一个上形成在所述磁性金属半导体化合物膜上的膜堆叠，所述膜堆叠包括磁性层; 以及形成在栅极侧壁上的氧化物层，所述氧化物层包含与膜堆叠中的元件相同的元件。
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公开(公告)号：US08134193B2
公开(公告)日：2012-03-13
申请号：US13170650
申请日：2011-06-28
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US20110316104A1
公开(公告)日：2011-12-29
申请号：US13170650
申请日：2011-06-28
IPC分类号： H01L29/82
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US08026561B2
公开(公告)日：2011-09-27
申请号：US12725561
申请日：2010-03-17
IPC分类号： H01L21/02
CPC分类号： H01L43/02 , B01D53/1493 , B01D53/62 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1695 , H01L28/00 , H01L29/0843 , H01L29/0895 , H01L29/66984 , H01L43/10
摘要： A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower face and the upper face; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on an upper face of the second ferromagnetic layer; a third ferromagnetic layer provided on an upper face of the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween.
摘要翻译： 自旋MOSFET包括：设置在半导体衬底的上表面上并且具有与膜平面垂直的固定磁化方向的第一铁磁层; 设置在所述第一铁磁层的上表面上的半导体层，包括与所述第一铁磁层的上表面相对的下表面，与所述下表面相对的上表面，以及与所述下表面和所述上表面不同的侧面 ; 第二铁磁层，设置在所述半导体层的上表面上，并且具有与膜平面垂直的可变磁化方向; 设置在所述第二铁磁层的上表面上的第一隧道势垒; 设置在所述第一隧道屏障的上表面上的第三铁磁层; 设置在所述半导体层的侧面上的栅极绝缘膜; 以及设置在半导体层的侧面上的栅电极，其间插入有栅极绝缘膜。
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公开(公告)号：US07956395B2
公开(公告)日：2011-06-07
申请号：US12200169
申请日：2008-08-28
IPC分类号： H01L27/115
CPC分类号： H01L29/66984 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286
摘要： A spin transistor includes a first ferromagnetic layer provided on a substrate and having an invariable magnetization direction, a second ferromagnetic layer provided on the substrate apart from the first ferromagnetic layer in a first direction, and having a variable magnetization direction, a plurality of projecting semiconductor layers provided on the substrate to extend in the first direction, and sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a plurality of channel regions respectively provided in the projecting semiconductor layers, and a gate electrode provided on the channel regions.
摘要翻译： 自旋晶体管包括设置在基板上并具有不变磁化方向的第一铁磁层，在第一方向上设置在与第一铁磁层隔开的基板上并具有可变磁化方向的第二铁磁层，多个突出半导体 设置在基板上以在第一方向上延伸并夹在第一铁磁层和第二铁磁层之间的层，分别设置在突出半导体层中的多个沟道区和设置在沟道区上的栅电极。
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公开(公告)号：US20110108898A1
公开(公告)日：2011-05-12
申请号：US12851072
申请日：2010-08-05
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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公开(公告)号：US07812383B2
公开(公告)日：2010-10-12
申请号：US11846040
申请日：2007-08-28
IPC分类号： H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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