公开(公告)号：US20200070205A1

公开(公告)日：2020-03-05

申请号：US16534012

申请日：2019-08-07

Applicant: Hitachi, Ltd.

Inventor： Taiichi TAKEZAKI ,  Hiroaki HASEGAWA ,  Shuntaro MACHIDA

IPC: B06B1/02 ,  G01N29/24

Abstract: A capacitive device includes a unit cell including a CMUT, and a transmission/reception plate for impedance matching which is provided above the unit cell via a connection portion, in which a membrane of the CMUT constituting the unit cell is connected to the transmission/reception plate via the connection portion having an area smaller than that of the transmission/reception plate. The area of the transmission/reception plate is desirably larger than the area of a hollow portion of the CMUT.

公开(公告)号：US20190321000A1

公开(公告)日：2019-10-24

申请号：US16245605

申请日：2019-01-11

Applicant: HITACHI, LTD.

Inventor： Taiichi TAKEZAKI ,  Hiroaki HASEGAWA ,  Shuntaro MACHIDA ,  Ryo IMAI ,  Tomohiko TANAKA

IPC: A61B8/00 ,  B06B1/02 ,  H04R19/00

Abstract: Performance of an ultrasonic examination device, which includes an ultrasonic sensor of a capacitance detection type including a cavity between electrodes and vibrating a membrane, is enhanced. A cell which is a capacitive type device provided with a lower electrode, a cavity, and an upper electrode in a membrane, which are stacked in a longitudinal direction, and a condenser provided with the lower electrode and an upper electrode which are stacked in the longitudinal direction, are formed in one semiconductor chip. The cell and the condenser are connected to each other in parallel, and, when ultrasonic waves are transmitted and received using the cell, connection between a DC bias power source and the semiconductor chip is blocked, and a direct current voltage is applied to the cell from the condenser.

公开(公告)号：US20190170699A1

公开(公告)日：2019-06-06

申请号：US16315676

申请日：2017-07-06

Applicant: HITACHI, LTD.

Inventor： Taiichi TAKEZAKI ,  Shuntaro MACHIDA ,  Daisuke RYUZAKI ,  Yasuhiro YOSHIMURA ,  Tatsuya NAGATA ,  Naoaki YAMASHITA

IPC: G01N29/24 ,  A61B8/00 ,  B06B1/02

Abstract: A capacitive micromachined ultrasonic transducer 111A includes: a silicon substrate 101; an insulating film 102 formed over the silicon substrate 101; a lower electrode 103; insulating films 104 and 106; a cavity 105 constituted by a void formed in a portion of the insulating film 106; an upper electrode 107; insulating films 108 and 114; and a protective film 109. In addition, the insulating film 106, upper electrode 107, insulating film 108 and insulating film 114 above the cavity 105 configure a vibration film 110, and the protective film 109 above the vibration film 110 is divided into a plurality of isolated patterns regularly arranged with a gap 115 having a constant spacing formed therebetween.

公开(公告)号：US20190118222A1

公开(公告)日：2019-04-25

申请号：US16090948

申请日：2017-07-07

Applicant: HITACHI, LTD.

Inventor： Hiroaki HASEGAWA ,  Shuntaro MACHIDA ,  Taiichi TAKEZAKI ,  Daisuke RYUZAKI

IPC: B06B1/02 ,  A61B8/00

Abstract: An ultrasonic transducer includes: a hollow portion 110 formed between insulating films 104 and 106 interposed between a lower electrode 103 and an upper electrode 107 above a substrate 101; and a membrane 120 that is configured of insulating films 106, 108, 111, and 112 and the upper electrode 107 above the hollow portion 110 and vibrates at a time of transmission/reception of ultrasonic wave. Also, the hollow portion 110 has a cross-sectional shape according to which a relationship of h1>h2>0 is established when a thickness of a center portion is given as h1 and a thickness of an outer peripheral portion is given as h2.

公开(公告)号：US20180273378A1

公开(公告)日：2018-09-27

申请号：US15765206

申请日：2016-03-18

Applicant: Hitachi, Ltd.

Inventor： Tetsufumi KAWAMURA ,  Kazuki WATANABE ,  Atsushi ISOBE ,  Yuudai KAMADA ,  Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: B81C99/00 ,  G06F17/50

Abstract: Provided is a technology that enables the shortening of the designing period. A device designing method includes a step of extracting a structure compatible with requested characteristics from a database in which each structure of a device is associated with characteristics and a step of outputting the extracted structure and a tuning parameter for adjusting the structure into ranges of the requested characteristics. In regard to each structure parameter determining the structure of the device, characteristics obtained by performing a simulation while exhaustively changing the structure parameter in a manufacturable range and the structure parameter used for the simulation are stored in the database while being associated with each other.

公开(公告)号：US20170362082A1

公开(公告)日：2017-12-21

申请号：US15610987

申请日：2017-06-01

Applicant: HITACHI, LTD.

Inventor： Keiji WATANABE ,  Shuntaro MACHIDA ,  Katsuya MIURA ,  Aki TAKEI ,  Tetsufumi KAWAMURA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: B81C1/00 ,  B81C99/00

CPC classification number: B81C1/00531 ,  B05D3/064 ,  B81C99/0025 ,  B81C2201/0132 ,  B81C2201/0136 ,  B81C2201/0143 ,  Y10S148/042 ,  Y10S438/924

Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

公开(公告)号：US20170156696A1

公开(公告)日：2017-06-08

申请号：US15325489

申请日：2015-06-19

Applicant: Hitachi, Ltd.

Inventor： Taiichi TAKEZAKI ,  Shuntaro MACHIDA ,  Daisuke RYUZAKI

IPC: A61B8/00 ,  G01B7/14 ,  A61B8/08

CPC classification number: A61B8/4483 ,  A61B8/4444 ,  A61B8/4494 ,  A61B8/5207 ,  A61B8/58 ,  B06B1/0292 ,  G01B7/14 ,  G01B17/02 ,  G01B21/045

Abstract: Technique that enables precisely measuring cavity height and precisely grasping maximum transmission sound pressure in an ultrasonic probe is provided to the ultrasonic probe using CMUT. The ultrasonic probe according to the present invention includes plural cells each of which includes a lower electrode and an upper electrode arranged via a gap with respect to the lower electrode, and the plural cells include an ultrasonic cell the gap of which is void and which transmits/receives an ultrasonic wave and a reference cell the gap of which is filled with a conductive material. Electrostatic capacity of the ultrasonic cell and the reference cell is measured, parasitic capacity included in the measured electrostatic capacity as to the ultrasonic cell is corrected using parasitic capacity included in the measured electrostatic capacity as to the reference cell, and cavity height is calculated on the basis of the corrected electrostatic capacity of the ultrasonic cell.