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公开(公告)号：US20190013179A1
公开(公告)日：2019-01-10
申请号：US16069796
申请日：2016-03-18
Applicant: HITACHI, LTD.
Inventor： Tetsufumi KAWAMURA , Misuzu SAGAWA , Kazuki WATANABE , Keiji WATANABE , Shuntaro MACHIDA , Nobuyuki SUGII , Daisuke RYUZAKI
IPC: H01J37/28 , H01L21/3065 , B81C1/00 , H01L21/66 , H01J37/305 , H01J37/302
CPC classification number: H01J37/28 , B81C1/00 , B81C2201/0132 , H01J37/3023 , H01J37/3056 , H01J2237/30411 , H01J2237/31745 , H01J2237/31749 , H01L21/3065 , H01L22/26
Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.
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公开(公告)号：US20200033390A1
公开(公告)日：2020-01-30
申请号：US16446907
申请日：2019-06-20
Applicant: HITACHI, LTD.
Inventor： Ryohei MATSUI , Nobuyuki SUGII , Tetsufumi KAWAMURA
Abstract: One preferable aspect of the present invention is a state detecting system which detects a state of a machine device based on a detection signal from a detecting element provided to the machine device, and is the state detecting system which includes a non-normal time rate detecting unit which detects a rate or a value as a non-normal time rate, the rate being a rate of an integration value of a time during which an amplitude of the detection signal exceeds a predetermined normal amplitude within a predetermined time, and the value being physically equivalent to the rate.
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公开(公告)号：US20180121589A1
公开(公告)日：2018-05-03
申请号：US15788303
申请日：2017-10-19
Applicant: HITACHI, LTD.
Inventor： Tetsufumi KAWAMURA , Nobuyuki SUGII , Yuudai KAMADA , Yuhua ZHANG , Atsushi ISOBE , Ryohei MATSUI , Daisuke RYUZAKI
IPC: G06F17/50
CPC classification number: G06F17/5045 , G06F2217/02
Abstract: The present invention provides a technique for determining the circuit configuration and device structure that meet required specifications in a short time. A device design support method includes: a step (S2) of receiving an input of specifications of a sensor, and extracting the circuit configuration and device specification range corresponding to the received specifications of the sensor, by referring to a circuit design database in which the circuit configuration configuring the sensor, the range of the specifications of the device configuring the sensor, and the specifications of the sensor are associated with each other; and a step (S3) of extracting the device structure corresponding to the extracted device specification range by referring to a device design database in which the specifications of the device and the structure of the device are associated with each other.
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公开(公告)号：US20180017958A1
公开(公告)日：2018-01-18
申请号：US15593747
申请日：2017-05-12
Applicant: HITACHI, LTD.
Inventor： Masaharu KINOSHITA , Nobuyuki SUGII , Tomonori SEKIGUCHI , Shuntaro MACHIDA , Tetsufumi KAWAMURA
IPC: G05B19/4099
CPC classification number: G05B19/4099 , G05B19/41865 , G05B2219/31342 , G05B2219/35008 , G05B2219/35499 , G05B2219/45031 , Y02P90/20 , Y02P90/26 , Y02P90/265
Abstract: A manufacturing device inputs design information including three-dimensional structure data, generates a manufacturing process flow, and displays the manufacturing process flow on a screen for a user to check, modify, and confirm the flow based on design information and setting information. A process method includes a first process method of a direct modeling method having an FIB method and a second process method of a semiconductor manufacturing process method which is a non-FIB method. The manufacturing device generates a plurality of manufacturing process flows by a combination of cases where each of the process methods is applied to each of the regions of the three-dimensional data. The manufacturing process flow includes a process device, the process method, a control parameter value, a process time, and a total process time for each of process steps. An output unit outputs a manufacturing process flow having, for example, the shortest total process time.
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公开(公告)号：US20180273378A1
公开(公告)日：2018-09-27
申请号：US15765206
申请日：2016-03-18
Applicant: Hitachi, Ltd.
Inventor： Tetsufumi KAWAMURA , Kazuki WATANABE , Atsushi ISOBE , Yuudai KAMADA , Shuntaro MACHIDA , Nobuyuki SUGII , Daisuke RYUZAKI
Abstract: Provided is a technology that enables the shortening of the designing period. A device designing method includes a step of extracting a structure compatible with requested characteristics from a database in which each structure of a device is associated with characteristics and a step of outputting the extracted structure and a tuning parameter for adjusting the structure into ranges of the requested characteristics. In regard to each structure parameter determining the structure of the device, characteristics obtained by performing a simulation while exhaustively changing the structure parameter in a manufacturable range and the structure parameter used for the simulation are stored in the database while being associated with each other.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180137212A1
公开(公告)日：2018-05-17
申请号：US15806803
申请日：2017-11-08
Applicant: HITACHI, LTD.
Inventor： Yuhua ZHANG , Tetsufumi KAWAMURA , Atsushi ISOBE , Nobuyuki SUGII , Daisuke RYUZAKI
IPC: G06F17/50
CPC classification number: G06F17/50 , G06F17/5009 , G06F17/5018 , G06F2217/12
Abstract: Provided is a device design support apparatus in which a data input-output portion receives an input of a first device provisional specification relating to a device from a customer, a database generating portion generates a second database based on a first database stored in a database storing portion and the first device provisional specification, and a device specification generating portion generates a second device provisional specification relating to the device based on the second database, presents the second device provisional specification to the customer by outputting the generated second device provisional specification through the data input-output portion, receives the input of a change content of the second device provisional specification from the customer, and generates a device fixed specification of the device based on the second device provisional specification and the change content.
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公开(公告)号：US20170362082A1
公开(公告)日：2017-12-21
申请号：US15610987
申请日：2017-06-01
Applicant: HITACHI, LTD.
Inventor： Keiji WATANABE , Shuntaro MACHIDA , Katsuya MIURA , Aki TAKEI , Tetsufumi KAWAMURA , Nobuyuki SUGII , Daisuke RYUZAKI
CPC classification number: B81C1/00531 , B05D3/064 , B81C99/0025 , B81C2201/0132 , B81C2201/0136 , B81C2201/0143 , Y10S148/042 , Y10S438/924
Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.
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8.发明申请公开(公告)号：US20220342480A1
公开(公告)日：2022-10-27
申请号：US17714309
申请日：2022-04-06
Applicant: HITACHI, LTD.
Inventor： Ryohei MATSUI , Ryotaro KAWAHARA , Tetsufumi KAWAMURA , Nobuyuki SUGII , Naoko USHIO , Hiroyuki YOSHIMOTO
Abstract: A pressure sensor device, a method for manufacturing the pressure sensor device, and a work management system mitigating a degree of a false detection is presented. The pressure sensor device detecting pressure includes a flexible substrate base material having flexibility; a comb-teeth shape electrode having an exposed metal surface formed in a predetermined area on the flexible substrate base material; and a pressure-sensitive material that is provided on the comb-teeth shape electrode, varies in a resistance value depending on an amount of a load, and has a curvature in a static state.
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公开(公告)号：US20180267075A1
公开(公告)日：2018-09-20
申请号：US15763240
申请日：2016-03-18
Applicant: Hitachi, Ltd.
Inventor： Shuntaro MACHIDA , Nobuyuki SUGII , Keiji WATANABE , Daisuke RYUZAKI , Tetsufumi KAWAMURA , Kazuki WATANABE
CPC classification number: G01P15/0802 , B81C99/001 , B81C99/0025 , B81C99/0065 , B81C2201/0143 , B81C2201/0181 , B81C2203/038 , G01P15/125
Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.
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公开(公告)号：US20180005906A1
公开(公告)日：2018-01-04
申请号：US15597285
申请日：2017-05-17
Applicant: HITACHI, LTD.
Inventor： Misuzu SAGAWA , Tetsufumi KAWAMURA
IPC: H01L21/66 , B81C1/00 , H01L21/306 , H01L21/67
CPC classification number: H01L22/20 , B81C1/00547 , B81C99/0025 , B81C99/0065 , B81C2201/0142 , H01L21/30604 , H01L21/67069 , H01L21/67253 , H01L21/67259
Abstract: The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.
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