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公开(公告)号：US20180017958A1
公开(公告)日：2018-01-18
申请号：US15593747
申请日：2017-05-12
Applicant: HITACHI, LTD.
Inventor： Masaharu KINOSHITA , Nobuyuki SUGII , Tomonori SEKIGUCHI , Shuntaro MACHIDA , Tetsufumi KAWAMURA
IPC: G05B19/4099
CPC classification number: G05B19/4099 , G05B19/41865 , G05B2219/31342 , G05B2219/35008 , G05B2219/35499 , G05B2219/45031 , Y02P90/20 , Y02P90/26 , Y02P90/265
Abstract: A manufacturing device inputs design information including three-dimensional structure data, generates a manufacturing process flow, and displays the manufacturing process flow on a screen for a user to check, modify, and confirm the flow based on design information and setting information. A process method includes a first process method of a direct modeling method having an FIB method and a second process method of a semiconductor manufacturing process method which is a non-FIB method. The manufacturing device generates a plurality of manufacturing process flows by a combination of cases where each of the process methods is applied to each of the regions of the three-dimensional data. The manufacturing process flow includes a process device, the process method, a control parameter value, a process time, and a total process time for each of process steps. An output unit outputs a manufacturing process flow having, for example, the shortest total process time.
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公开(公告)号：US20190167229A1
公开(公告)日：2019-06-06
申请号：US16209525
申请日：2018-12-04
Applicant: HITACHI, LTD.
Inventor： Taiichi TAKEZAKI , Shuntaro MACHIDA , Hiroaki HASEGAWA , Tomohiko TANAKA , Ryo IMAI , Yoshiho SEO , Takahiro MATSUDA , Shinsuke ONOE
Abstract: An ultrasound imaging probe capable of securing an assembly accuracy of and improving a resolution performance of an obtained image is provided. A photoacoustic catheter includes: a silicon substrate which includes an ultrasonic transducer for detecting an ultrasonic wave formed thereon and a through hole passing through front and rear surfaces; an optical fiber which oscillates a laser; a lens which condenses the laser and is arranged within the through hole; a tubular housing; a glass cover which covers the lens; and a resin which fills a gap between the through hole and the lens. Further, the silicon substrate and the optical fiber are fixed to a part of the housing in the housing.
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公开(公告)号：US20180267075A1
公开(公告)日：2018-09-20
申请号：US15763240
申请日：2016-03-18
Applicant: Hitachi, Ltd.
Inventor： Shuntaro MACHIDA , Nobuyuki SUGII , Keiji WATANABE , Daisuke RYUZAKI , Tetsufumi KAWAMURA , Kazuki WATANABE
CPC classification number: G01P15/0802 , B81C99/001 , B81C99/0025 , B81C99/0065 , B81C2201/0143 , B81C2201/0181 , B81C2203/038 , G01P15/125
Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.
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4.发明申请公开(公告)号：US20180161813A1
公开(公告)日：2018-06-14
申请号：US15579383
申请日：2015-06-04
Applicant: HITACHI, LTD.
Inventor： Hiroaki HASEGAWA , Taiichi TAKEZAKI , Shuntaro MACHIDA , Daisuke RYUZAKI
CPC classification number: B06B1/0292 , A61B8/4483 , B81B3/0037 , B81B2201/0271 , B81B2203/0315 , B81B2207/053 , G01N29/2406 , H03H9/174 , H03H9/24 , H04R19/00 , H04R31/00
Abstract: An ultrasonic transducer element includes a substrate, a lower electrode on a first surface of the substrate, a first insulating film on the lower electrode, a first cavity layer on the first insulating film, a second insulating film on the first cavity layer, an upper electrode on the second insulating film that overlaps the first cavity layer, a third insulating film on the upper electrode, a second cavity layer on the third insulating film, a fourth insulating film on the second cavity layer, a fixing portion formed by the second to fourth insulating films, a movable portion in a membrane insides the second cavity layer, a first connection portion and a second connection portion that are stacked with a gap and the connection portions are configured by the second to fourth insulating films connecting the movable portion and the fixing portion.
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5.发明申请公开(公告)号：US20170291192A1
公开(公告)日：2017-10-12
申请号：US15513588
申请日：2015-04-21
Applicant: Hitachi, Ltd.
Inventor： Shuntaro MACHIDA , Daisuke RYUZAKI , Tatsuya NAGATA , Naoaki YAMASHITA , Yuko HANAOKA , Yasuhiro YOSHIMURA
IPC: B06B1/06
CPC classification number: B06B1/06 , A61B8/4461 , A61B8/4494 , B06B1/0292 , B06B1/0607 , B06B1/0644 , G01N29/043 , G01N29/24 , G01N29/2406 , G01N2291/0232 , G01N2291/106 , H04R19/005 , H04R31/00
Abstract: A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20210063553A1
公开(公告)日：2021-03-04
申请号：US17007237
申请日：2020-08-31
Applicant: Hitachi, Ltd.
Inventor： Taiichi TAKEZAKI , Shuntaro MACHIDA
IPC: G01S7/52
Abstract: Disclosed is a measurement method of ultrasonic waves using a capacitive micromachined ultrasonic transducer. The method includes measuring a ultrasonic wave by applying a bias voltage to the capacitive micromachined ultrasonic transducer in each of a plurality of first periods, and applying a voltage that is equal to or greater than 0V and smaller than the bias voltage to the capacitive micromachined ultrasonic transducer in a second period between two first periods among the plurality of first periods.
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公开(公告)号：US20200069287A1
公开(公告)日：2020-03-05
申请号：US16361605
申请日：2019-03-22
Applicant: Hitachi, Ltd.
Inventor： Hiroaki HASEGAWA , Kengo IMAGAWA , Shuntaro MACHIDA , Taiichi TAKEZAKI
Abstract: Capacitors, each of which is electrically connected to a capacitor which is the cell of the CMUT mounted in a chip and is used as a DC block capacitor for protecting an amplifying circuit, are formed as many as plural aligned channels in the chip. The capacitor is an electrostatic capacitance element which is not vibrated acoustically.
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公开(公告)号：US20190013179A1
公开(公告)日：2019-01-10
申请号：US16069796
申请日：2016-03-18
Applicant: HITACHI, LTD.
Inventor： Tetsufumi KAWAMURA , Misuzu SAGAWA , Kazuki WATANABE , Keiji WATANABE , Shuntaro MACHIDA , Nobuyuki SUGII , Daisuke RYUZAKI
IPC: H01J37/28 , H01L21/3065 , B81C1/00 , H01L21/66 , H01J37/305 , H01J37/302
CPC classification number: H01J37/28 , B81C1/00 , B81C2201/0132 , H01J37/3023 , H01J37/3056 , H01J2237/30411 , H01J2237/31745 , H01J2237/31749 , H01L21/3065 , H01L22/26
Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.
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公开(公告)号：US20200222940A1
公开(公告)日：2020-07-16
申请号：US16741145
申请日：2020-01-13
Applicant: Hitachi, Ltd.
Inventor： Masakazu KAWANO , Taiichi TAKEZAKI , Shuntaro MACHIDA , Daisuke RYUZAKI
Abstract: An object of the present invention is to provide an ultrasonic transducer having a high sensitivity and a high durability. An ultrasonic transducer includes: a pair of upper and lower electrodes; a cavity layer having a vibration space directly sandwiched between the pair of electrodes; and an insulating layer sandwiched between the pair of electrodes and disposed around the vibration space. A vertical thickness of the insulating layer is greater than that of the cavity layer.
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公开(公告)号：US20200171538A1
公开(公告)日：2020-06-04
申请号：US16699185
申请日：2019-11-29
Applicant: Hitachi, Ltd.
Inventor： Taiichi TAKEZAKI , Masakazu KAWANO , Shuntaro MACHIDA
Abstract: A highly-sensitive ultrasonic transducer with good yield is provided. The ultrasonic transducer includes a cavity layer, a pair of electrodes positioned above and below the cavity layer, insulating layers disposed above and below each of the pair of electrodes, and a filled hole that penetrates, in a vertical direction, at least a portion of the insulating layers positioned above the cavity layer. When the ultrasonic transducer is viewed from above, each electrode of the pair of electrodes includes, at a position that overlaps the embedded hole, a non-electrode region where the electrodes are not formed.
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